Vishay MBR3035WTPbF, MBR3045WTPbF Data Sheet

MBR3035WTPbF/MBR3045WTPbF
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
Base
common
cathode
2
• 150 °C TJ operation
• Center tap TO-247 package
• Very low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
TO-2 47AC
1 3
Anode
1
2
Common
cathode
Anode
2
DESCRIPTION
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
2 x 15 A
35/45 V
100 mA at 125 °C
The MBR30..WTPbF center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
Rectangular waveform (per device) 30
TC = 125 °C (per leg) 30
35/45 V
tp = 5 µs sine 1020 A
20 Apk, TJ = 125 °C 0.60 V
Range - 65 to 150 °C
A
Pb-free
Available
RoHS*
COMPLIANT
VOLTAGE RATINGS
PARAMETER SYMBOL MBR3035WTPbF MBR3045WTPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
35 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
Peak repetitive forward current per leg I
Non-repetitive peak surge current I
Peak repetitive reverse surge current I
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94293 For technical questions, contact: diodes-tech@vishay.com Revision: 14-Aug-08 1
per leg
per device 30
I
F(AV)
FRM
FSM
RRM
TC = 125 °C, rated V
Rated VR, square wave, 20 kHz TC = 125 °C 30
5 µs sine or 3 µs rect. pulse
Surge applied at rated load conditions half wave, single phase, 60 Hz
2.0 µs 1.0 kHz 2.0
R
Following any rated load condition and with rated
applied
V
RRM
15
1020
200
A
www.vishay.com
MBR3035WTPbF/MBR3045WTPbF
Vishay High Power Products
Schottky Rectifier, 2 x 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
30 A TJ = 25 °C 0.76
Maximum forward voltage drop V
FM
(1)
30 A 0.72
Maximum instantaneous reverse current I
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance C
Typical series inductance L
RM
F(TO)
(1)
T
= 125 °C 100
J
TJ = TJ maximum
T
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 800 pF
T
Measured from top of terminal to mounting plane 7.5 nH
S
TJ = 25 °C
Maximum voltage rate of change dV/dt Rated V
T
= 125 °C
J
Rated DC voltage
R
0.60
1.0
0.29 V
13.8 mΩ
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case per leg
Typical thermal resistance, case to heatsink
J
Stg
R
DC operation 1.40
thJC
R
thCS
Mounting surface, smooth and greased 0.24
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-247AC (JEDEC)
- 65 to 150
- 65 to 175
6g
0.21 oz.
kgf · cm
(lbf · in)
MBR3035WT
MBR3045WT
V20 A
mA
°C
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94293
2 Revision: 14-Aug-08
MBR3035WTPbF/MBR3045WTPbF
Schottky Rectifier, 2 x 15 A
100
TJ = 150 °C
= 125 °C
T
J
= 25 °C
T
10
- Instantaneous
F
I
Forward Current (A)
1
0.2 0.4 0.6 0.8 1.0 1.2 1.40
V
- Forward Voltage Drop (V)
FM
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
J
1000
Vishay High Power Products
1000
100
- Reverse Current (mA)
R
0.01
I
0.001
TJ = 150 °C
TJ = 125 °C
10
TJ = 100 °C
1
TJ = 75 °C
TJ = 50 °C
0.1
TJ = 25 °C
10
5
0
V
- Reverse Voltage (V)
R
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
15
20
25
30
40
35
45
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
10
20 30 40 500
V
- Reverse Voltage (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
10
1
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics (Per Leg)
thJC
P
DM
t
1
t
2
1/t2
+ T
thJC
C
10
Document Number: 94293 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 14-Aug-08 3
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