Vishay MBR3035PT, MBR3060PT Data Sheet
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
3
2
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
max. 150 °C
J
35 V to 60 V
0.60 V, 0.65 V
30 A
200 A
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT
Maximum repetitive peak reverse voltage V
Maximum working peak reverse voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current (Fig. 1) I
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse surge current
Voltage rate of change at (rated V
Operating junction temperature range T
Storage temperature range T
Note:
(1) 2.0 µs pulse width, f = 1.0 kHz
per diode
) dV/dt 10 000 V/µs
R
(1)
35 45 50 60 V
RRM
35 45 50 60 V
RWM
35 45 50 60 V
DC
F(AV)
I
200 A
FSM
I
2.0 1.0 A
RRM
- 65 to + 150 °C
J
- 65 to + 175 °C
STG
30 A
Document Number: 88676
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT
Maximum instantaneous
forward voltage per diode
Maximum instantaneous
reverse current at rated DC
blocking voltage per diode
I
= 20 A
F
I
= 20 A
F
(1)
I
= 30 A
F
I
= 30 A
F
(1)
T
= 25 °C
C
T
= 125 °C
C
T
= 25 °C
C
T
= 125 °C
C
TC = 25 °C
T
= 125 °C
C
-
V
F
0.60
0.76
0.72
I
R
1.0
60
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT
Thermal resistance from junction to case per diode R
1.4 °C/W
θJC
0.75
0.65
-
-
5.0
100
V
mA
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD MBR3045PT-E3/45 6.13 45 30/tube Tube
RATINGS AND CHARACTERISTICS CURVES
(T
= 25 °C unless otherwise specified)
A
30
Resistive or Inductive Load
24
rrent (A)
18
12
6
Average Forward Cu
0
0
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
50
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
100
150
300
TJ = TJ Max.
250
200
150
100
50
Peak For ward Surge Current (A)
0
1
Number of Cycles at 60 Hz
8.3 ms Single Half Sine-Wave
10
100
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com For technical questions within your region, please contact one of the following:
2
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88676
Revision: 07-May-08
Loading...