MBR3035PT thru MBR3060PT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
3
2
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
max. 150 °C
J
35 V to 60 V
0.60 V, 0.65 V
30 A
200 A
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT
Maximum repetitive peak reverse voltage V
Maximum working peak reverse voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current (Fig. 1) I
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Peak repetitive reverse surge current
Voltage rate of change at (rated V
Operating junction temperature range T
Storage temperature range T
Note:
(1) 2.0 µs pulse width, f = 1.0 kHz
per diode
) dV/dt 10 000 V/µs
R
(1)
35 45 50 60 V
RRM
35 45 50 60 V
RWM
35 45 50 60 V
DC
F(AV)
I
200 A
FSM
I
2.0 1.0 A
RRM
- 65 to + 150 °C
J
- 65 to + 175 °C
STG
30 A
Document Number: 88676
Revision: 07-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT
Maximum instantaneous
forward voltage per diode
Maximum instantaneous
reverse current at rated DC
blocking voltage per diode
I
= 20 A
F
I
= 20 A
F
(1)
I
= 30 A
F
I
= 30 A
F
(1)
T
= 25 °C
C
T
= 125 °C
C
T
= 25 °C
C
T
= 125 °C
C
TC = 25 °C
T
= 125 °C
C
-
V
F
0.60
0.76
0.72
I
R
1.0
60
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR3035PT MBR3045PT MBR3050PT MBR3060PT UNIT
Thermal resistance from junction to case per diode R
1.4 °C/W
θJC
0.75
0.65
-
-
5.0
100
V
mA
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD MBR3045PT-E3/45 6.13 45 30/tube Tube
RATINGS AND CHARACTERISTICS CURVES
(T
= 25 °C unless otherwise specified)
A
30
Resistive or Inductive Load
24
rrent (A)
18
12
6
Average Forward Cu
0
0
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
50
Case Temperature (°C)
Figure 1. Forward Current Derating Curve
100
150
300
TJ = TJ Max.
250
200
150
100
50
Peak For ward Surge Current (A)
0
1
Number of Cycles at 60 Hz
8.3 ms Single Half Sine-Wave
10
100
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
www.vishay.com For technical questions within your region, please contact one of the following:
2
PDD-Americas@vishay.com
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88676
Revision: 07-May-08
MBR3035PT thru MBR3060PT
Vishay General Semiconductor
100
TJ = 150 °C
10
1
TJ = 25 °C
0.1
Instantaneous Forward Current (A)
0.01
0 0.20.1 0.5 1.00.40.3 0.6 0.7 0.8 0.9
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
10
1
0.1
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
TJ = 125 °C
TJ = 75 °C
10 000
TJ = 25 °C
f = 1.0 MHz
= 50 mVp-p
V
sig
1000
Junction Capacitance (pF)
100
0.1
MBR3035PT - MBR3045PT
MBR3050PT & MBR3060PT
101
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
10
1
100
0.01
Instantaneous Reverse Current (mA)
0.001
200 10040 60 80
TJ = 25 °C
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-247AD (TO-3P)
0.645 (16.4)
0.625 (15.9)
1
2
3
PIN 1
PIN 3
0.323 (8.2)
0.313 (7.9)
0.170
(4.3)
0.142 (3.6)
0.138 (3.5)
0.086(2.18)
0.076 (1.93)
0.127 (3.22)
0.117 (2.97)
0.048 (1.22)
0.044 (1.12)
PIN 2
CASE
, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88676
Revision: 07-May-08
0.245 (6.2)
0.225 (5.7)
0.840 (21.3)
0.820 (20.8)
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.225 (5.7)
0.205 (5.2)
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com
Transient Thermal Impedance (°C/W)
0.1
0.01
0.1
101
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
0.203 (5.16)
0.193 (4.90)
30°
10° TYP.
Both Sides
0.118 (3.0)
0.108 (2.7)
0.030 (0.76)
0.020 (0.51)
0.078 (1.98) REF.
10
1° REF.
Both Sides
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Document Number: 91000 www.vishay.com
Revision: 11-Mar-11 1
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