Vishay MBR16..PbF Series Data Sheet

TO-220AC

Schottky Rectifier, 16 A

FEATURES

• 150 °C TJ operation

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance

• Guard ring for enhanced ruggedness and long term
reliability

• Lead (Pb)-free (“PbF” suffix)

• Designed and qualified for industrial level

cathode

1

Cathode

Base

2

3

Anode

MBR16..PbF Series

Vishay High Power Products

Pb-free

Available

RoHS*

COMPLIANT

PRODUCT SUMMARY

I

F(AV)

V

R

V

at 16 A at 25 °C 0.63 V

F

I

RM

16 A

35/45 V

40 mA at 125 °C

DESCRIPTION

The MBR16..PbF Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Rectangular waveform 16 A

35/45 V

tp = 5 µs sine 1800 A

16 Apk, TJ = 125 °C 0.57 V

Range - 65 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL MBR1635PbF MBR1645PbF UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

35 45 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Non-repetitive peak surge current I

Non-repetitive avalanche energy E

Repetitive avalanche current I

F(AV)

FSM

AR

TC = 134 °C, rated V

5 µs sine or 3 µs rect. pulse

Surge applied at rated load condition half wave
single phase, 60 Hz

TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH 24 mJ

AS

Current decaying linearly to zero in 1 µs
Frequency limited by T

R

Following any rated load
condition and with rated
V

applied

RRM

maximum VA = 1.5 x VR typical

J

16 A

1800

A

150

3.6 A

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94286 For technical questions, contact: [e-mail]
Revision: 14-Aug-08 1

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MBR16..PbF Series

Vishay High Power Products

Schottky Rectifier, 16 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

= 25 °C 0.63

T

(1)

Maximum forward voltage drop V

Maximum instantaneous reverse current I

RM

Maximum junction capacitance C

Typical series inductance L

FM

16 A

TJ = 25 °C

(1)

T

= 125 °C 40

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1400 pF

T

Measured from top of terminal to mounting plane 8.0 nH

S

Maximum voltage rate of change dV/dt Rated V

R

J

T

= 125 °C 0.57

J

Rated DC voltage

0.2

10 000 V/µs

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

J

Stg

R

DC operation 1.50

thJC

R

thCS

Mounting surface, smooth and greased 0.50

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-220AC (JEDEC)

- 65 to 150

- 65 to 175

2g

0.07 oz.

kgf · cm

(lbf · in)

MBR1635

MBR1645

V

mA

°C

°C/W

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Document Number: 94286

2 Revision: 14-Aug-08

MBR16..PbF Series

100

10

1

- Instantaneous Forward Current (A)

F

I

0 0.2 0.6 0.8

Schottky Rectifier, 16 A

TJ = 150 °C
T

= 125 °C

J

= 25 °C

T

J

1.0

VFM - Forward Voltage Drop (V)

- Reverse Current (µA)

R

I

1.20.4

Vishay High Power Products

100

10

0.1

0.01

0.001

0.0001

1

0

TJ = 100 °C

TJ = 75 °C

TJ = 50 °C

TJ = 25 °C

510 20 30 40

15 35 4525

VR - Reverse Voltage (V)

TJ = 150 °C

TJ = 125 °C

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

10 000

1000

- Junction Capacitance (pF)

T

C

100

10 30 40

020 50

TJ = 25 °C

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10

1

0.1

0.01

Single pulse

(thermal resistance)

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

- Thermal Impedance (°C/W)

thJC

Z

0.001

0.00001 0.0001 0.001 0.01 0.1

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

Characteristics

thJC

P

DM

t

1

t

2

.

1/t2

+ T

thJC

C

1 10

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Revision: 14-Aug-08 3

MBR16..PbF Series

Vishay High Power Products

155

150

145

140

Square wave (D = 0.50)

135

130

125

Allowable Case Temperature (°C)

120

025

applied

Rated V

R

See note (1)

I

- Average Forward Current (A)

F(AV)

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

DC

10 000

Schottky Rectifier, 16 A

2015105

At any rated load condition
and with rated V
following surge

RRM

15

10

5

Average Power Loss (W)

0

025

Fig. 6 - Forward Power Loss Characteristics

applied

DC

5 101520

I

- Average Forward Current (A)

F(AV)

RMS limit

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

1000

- Non-Repetitive Surge Current (A)

100

FSM

I

100 1000

tp - Square Wave Pulse Duration (µs)

Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)

L

High-speed

switch

Freewheel

diode

40HFL40S02

Current
monitor

D.U.T.

IRFP460

= 25 Ω

R

g

Fig. 8 - Unclamped Inductive Test Circuit

10 00010

V

= 25 V

d

+

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR applied

REV

F(AV)

) x R

REV

x VFM at (I

thJC

;

F(AV)

/D) (see fig. 6);

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Document Number: 94286

4 Revision: 14-Aug-08

MBR16..PbF Series

Schottky Rectifier, 16 A

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95221

Part marking information http://www.vishay.com/doc?95224

MBR 16 45 PbF

1324

1 - Schottky MBR series

2 - Current rating (16 = 16 A)

3 - Voltage ratings

4 - None = Standard production

PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

35 = 35 V
45 = 45 V

Document Number: 94286 For technical questions, contact: [e-mail]
Revision: 14-Aug-08 5

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DIMENSIONS in millimeters and inches

(6)

E

(7)

E2

Q

(6)

D

D1

13

L3

L4

2

A

Ø P

0.014 AB

Detail B

L

MM

C

(6)

H1

(7)

TO-220AC

B

Seating

plane

A

A

A1

Outline Dimensions

Vishay Semiconductors

123

DL1D

H1

θ

E

Thermal pad

D2 (6)

E1 (6)

2 x b2 2 x b

Lead assignments

Diodes
1 + 2 - Cathode

3 - Anode

CC

Detail B

Lead tip

SYMBOL

e1

MM

0.015 AB

c

MILLIMETERS INCHES

MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

A

A2

NOTES SYMBOL

View A - A

Conforms to JEDEC outline TO-220AC

MILLIMETERS INCHES

NOTES

A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6

A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7

A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105

b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208

b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7

b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552

b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2

c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084

c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2

D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147

D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118

D2 11.68 12.88 0.460 0.507 6  90° to 93° 90° to 93°

E 10.11 10.51 0.398 0.414 3, 6

Notes

(1)

Dimensioning and tolerancing as per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body

(4)

Dimension b1, b3 and c1 apply to base metal only

(5)

Controlling dimension: inches

(6)

Thermal pad contour optional within dimensions E, H1, D2 and E1

(7)

Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed

(8)

Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline

Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 [e-mail]

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