VISHAY MBR 1560CTE3 VIS Datasheet

MBR15xxCT, MBRF15xxCT, MBRB15xxCT
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
MBR15xxCT
ITO-220AB
MBRB15xxCT
PIN 1
PIN 2
K
HEATSINK
1
2
3
1
2
K
MBRF15xxCT
PIN 2
PIN 1
PIN 3
TO-263AB
1
2
3
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Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
max. 150 °C
J
Package
Diode variations Dual Common Cathode
2 x 7.5 A
35 V to 60 V
0.57 V, 0.65 V
TO-220AB, ITO-220AB,
TO-263AB
150 A
Case: TO-220AB, ITO-220AB, TO-263AB
Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1535CT MBR1545CT MBR1550CT MBR1560CT UNIT
Maximum repetitive peak reverse voltage V
Maximum DC blocking voltage V
Maximum average forward rectified current
= 105 °C
at T
C
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode at t
= 2.0 μs, 1 kHz
p
Voltage rate of change (rated V
Operating junction temperature range T
Storage temperature range T
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
) dV/dt 10 000 V/μs
R
total device
per diode 7.5
I
I
I
RRM
RWM
DC
F(AV)
FSM
RRM
STG
V
AC
J
35 45 50 60
35 45 50 60
35 45 50 60
15
150
1.0 0.5
- 65 to + 150
- 65 to + 175
1500 V
VWorking peak reverse voltage V
A
°C
Revision: 20-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
Document Number: 88670
MBR15xxCT, MBRF15xxCT, MBRB15xxCT
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ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MBR1535CT MBR1545CT MBR1550CT MBR1560CT UNIT
IF = 7.5 A TC = 25 °C - 0.75
= 7.5 A TC = 125 °C 0.57 0.65
I
Maximum instantaneous forward voltage per diode
Maximum instantaneous reverse current at DC blocking voltage per diode
V
I
R
F
(1)
F
= 15 A TC = 25 °C 0.84 -
I
F
= 15 A TC = 125 °C 0.72 -
I
F
(2)
Rated V
TC = 25 °C 0.1 1.0
R
= 125 °C 15 50
T
C
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR MBRF MBRB UNIT
R
Maximum thermal resistance per diode
JA
R
JC
Vishay General Semiconductor
60 - 60
3.0 5.0 3.0
°C/W
V
mA
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR1545CT-E3/45 1.85 45 50/tube Tube
ITO-220AB MBRF1545CT-E3/45 1.99 45 50/tube Tube
TO-263AB MBRB1545CT-E3/45 1.35 45 50/tube Tube
TO-263AB MBRB1545CT-E3/81 1.35 81 800/reel Tape and reel
TO-220AB MBR1545CTHE3/45
ITO-220AB MBRF1545CTHE3/45
TO-263AB MBRB1545CTHE3/45
TO-263AB MBRB1545CTHE3/81
Note
(1)
AEC-Q101 qualified
(1)
1.85 45 50/tube Tube
1)
(1)
(1)
1.99 45 50/tube Tube
1.35 45 50/tube Tube
1.35 81 800/reel Tape and reel
Revision: 20-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
2
Document Number: 88670
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR15xxCT, MBRF15xxCT, MBRB15xxCT
0
50
100
150
0
5
10
15
20
25
Average Forward C
u
rrent (A)
Case Temperature (°C)
Resistive or Inductive Load
0
.01
0
.1
0
.1
0
.2
0
.3
0
.4
0
.5
0
.6 0
.7
0
.8
0
.9
1
.0
1
.1
1
.2
0
1
1
0
1
00
Pulse Width = 300 µs 1 % Duty Cycle
TJ = 125 °C
T
J
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
MBR1535CT, MBR1545CT MBR1550CT, MBR1560CT
0
2
0
4
0
6
0
8
0
1
00
0
.001
0
.01
0
.1
1
1
0
1
00
TJ = 125 °C
T
J
= 25 °C
T
J
= 75 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
MBR1535CT, MBR1545CT MBR1550CT, MBR1560CT
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RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Vishay General Semiconductor
Fig. 1 - Forward Current Derating Curve
175
TJ = TJ Max.
150
125
100
75
50
Peak Forward Surge Current (A)
25
1
8.3 ms Single Half Sine-Wave
10
100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
10 000
1000
100
Junction Capacitance (pF)
10
0.1
MBR1535CT, MBR1545CT MBR1550CT, MBR1560CT
1
Reverse Voltage (V)
TJ = 25 °C f = 1.0 MHz V
sig
10
= 50 mV
Fig. 5 - Typical Junction Capacitance Per Diode
100
10
p-p
100
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Revision: 20-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
Transient Thermal Impedance (°C/W)
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance Per Diode
3
Document Number: 88670
MBR15xxCT, MBRF15xxCT, MBRB15xxCT
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
132
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
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PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
45° REF.
0.600 (15.24)
0.580 (14.73)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
Vishay General Semiconductor
ITO-220AB
0.404 (10.26)
0.384 (9.75)
PIN
321
0.191 (4.85)
0.171 (4.35)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.057 (1.45)
0.045 (1.14)
0.076 (1.93) REF.
0.076 (1.93) REF.
0.671 (17.04)
0.651 (16.54)
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
7° REF.
0.350 (8.89)
0.330 (8.38)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
7° REF.
0.110 (2.79)
0.100 (2.54)
0.028 (0.71)
0.020 (0.51)
Revision: 20-Jan-14
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22) MIN.
K
0.360 (9.14)
0.320 (8.13)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
K
12
0.624 (15.85)
0.591 (15.00)
0.205 (5.20)
0.195 (4.95)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
4
Mounting Pad Layout
0.42 (10.66) MIN.
0.670 (17.02)
0.591 (15.00)
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.33 (8.38) MIN.
0.15 (3.81) MIN.
Document Number: 88670
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Revision: 02-Oct-12
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Document Number: 91000
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