Vishay MBR150, MBR160 Data Sheet

DO-204AL

Schottky Rectifier, 1 A

FEATURES

• Low profile, axial leaded outline

• Very low forward voltage drop

• High frequency operation

Cathode Anode

• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance

• Guard ring for enhanced ruggedness and long term
reliability

• Lead (Pb)-free plating

• Designed and qualified for industrial level

MBR150, MBR160

Vishay High Power Products

PRODUCT SUMMARY

I

F(AV)

V

R

I

RM

1 A

50/60 V

10 mA at 125 °C

DESCRIPTION

The MBR150, MBR160 axial leaded Schottky rectifier has
been optimized for very low forward voltage drop, with
moderate leakage. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

RRM

I

FSM

V

F

T

J

Rectangular waveform 1.0 A

50/60 V

tp = 5 µs sine 150 A

1 Apk, TJ = 125 °C 0.65 V

Range - 40 to 150 °C

VOLTAGE RATINGS

PARAMETER SYMBOL MBR150 MBR160 UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

50 60 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
See fig. 4

Maximum peak one cycle
non-repetitive surge current
See fig. 6

Non-repetitive avalanche energy E

Repetitive avalanche current I

I

F(AV)

I

FSM

AR

50 % duty cycle at TC = 75 °C, rectangular waveform 1.0

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse 25

TJ = 25 °C, I

AS

Current decaying linearly to zero in 1 µs
Frequency limited by, T

= 1 A, L = 4 mH 2.0 mJ

AS

maximum VA = 1.5 x VR typical

J

Following any rated load
condition and with rated
V

applied

RRM

150

1.0 A

A

Document Number: 93439 For technical questions, contact: [e-mail]
Revision: 06-Nov-08 1

www.vishay.com

MBR150, MBR160

Vishay High Power Products

Schottky Rectifier, 1 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

1 A

2 A 0.9

Maximum forward voltage drop
See fig. 1

V

FM

3 A 1.0

(1)

1 A

2 A 0.75

3 A 0.82

TJ = 25 °C

Maximum reverse leakage current
See fig. 2

Typical junction capacitance C

Typical series inductance L

(1)

I

RM

T

S

J

T

J

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 55 pF

Measured lead to lead 5 mm from package body 8.0 nH

Maximum voltage rate of change dV/dt Rated V

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

T

= 25 °C

J

T

= 125 °C

J

= 100 °C 5

= Rated V

V

R

R

= 125 °C 10

R

0.75

0.65

0.5

10 000 V/µs

V

mAT

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to lead

Approximate weight

Marking device Case style DO-204AL (DO-41)

Notes

dP

(1)

------------­dT

(2)

Mounted 1" square PCB, thermal probe connected to lead 2 mm from package

1

tot

J

thermal runaway condition for a diode on its own heatsink

--------------<
R

thJA

(1)

T

, T

J

Stg

DC operation

(2)

R

thJL

See fig. 4

- 40 to 150 °C

80 °C/W

0.33 g

0.012 oz.

MBR150

MBR160

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93439

2 Revision: 06-Nov-08

MBR150, MBR160

Schottky Rectifier, 1 A

10

(A)

F

1

Instantaneous Forward Current - I

Tj = 150˚C

Tj = 125˚C

Tj = 25˚C

0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Forward Voltage Drop - VFM (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics

Vishay High Power Products

100

(pF)

T

Junction Capacitance - C

10

0 10203040506070

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

160

140

120

100

80

60

Square wave (D = 0.50)

40

80% Rated Vr applied

20

Allowable Lead Temperature (°C)

see note (1)

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Average Forward Current - I

Fig. 4 - Maximum Ambient Temperature vs.

Average Forward Current, Printed Circuit Board Mounted

T = 25˚C

J

Reverse Voltage - VR (V)

DC

F(AV)

(A)

100

T = 150˚C

J

125˚C

(mA)

R

10

1

0.1

0.01

Reverse Current - I

0.001

25˚C

0.0001
0 10203040506070

Reverse Voltage - VR(V)

Fig. 2 - Typical Values of Reverse Current vs.

1

0.8

0.6

RMS Limit

0.4

D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75

0.2

Average Power Loss (Watts)

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

Average Forward Current - I

DC

Fig. 5 - Forward Power Loss Characteristics

F(AV)

(A)

Reverse Voltage

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I

F(AV)

) x R

REV

x VFM at (I

;

thJC

/D) (see fig. 6); Pd

F(AV)

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V

REV

R

Document Number: 93439 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 06-Nov-08 3

MBR150, MBR160

Vishay High Power Products

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ORDERING INFORMATION TABLE

Schottky Rectifier, 1 A

At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge

100

10

10 100 1000 10000

Square Wave Pulse Duration - t p (microsec)

Fig. 6 - Maximum Non-Repetitive Surge Current

Device code

MBR 1 60 TR

1324

1 - Schottky MBR series

2 - Current rating: 1 = 1 A

3 - Voltage rating

50 = 50 V
60 = 60 V

4 - TR = Tape and reel package (5000 pcs)

None = Box package (1000 pcs)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95241

Part marking information http://www.vishay.com/doc?95304

Packaging information http://www.vishay.com/doc?95308

www.vishay.com For technical questions, contact: [e-mail]
4 Revision: 06-Nov-08

Document Number: 93439

DIMENSIONS in millimeters (inches)

2.70 (0.106)

2.29 (0.090)

DIA.

2.70 (0.106)

2.29 (0.090)

DIA.

0.86 (0.034)

0.72 (0.028)
(2 places)

27.0 (1.06) MIN.
(2 places)

5.21 (0.205)
MAX.

5.21 (0.205)
MAX.

27.0 (1.06) MIN.
(2 places)

1.27 (0.050) MAX.
Flash (2 places)

DIA.

0.86 (0.034)

0.72 (0.028)
(2 places)

DIA.

Cathode band

Outline Dimensions

Vishay Semiconductors

Axial DO-204AL (DO-41)

Document Number: 95241 For technical questions, contact: [e-mail]
Revision: 22-Nov-07 1

www.vishay.com

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Revision: 11-Mar-11 1