Vishay MBR1100 Data Sheet
DO-204AL
Schottky Rectifier, 1 A
FEATURES
• Low profile, axial leaded outline
• Very low forward voltage drop
• High frequency operation
Cathode Anode
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Lead (Pb)-free plating
• Designed and qualified for industrial level
MBR1100
Vishay High Power Products
PRODUCT SUMMARY
I
F(AV)
V
R
1 A
100 V
The MBR1100 axial leaded Schottky rectifier has been
optimized for very low forward voltage drop, with moderate
leakage. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
DESCRIPTION
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 1.0 A
100 V
tp = 5 µs sine 200 A
1 Apk, TJ = 125 °C 0.68 V
Range - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL MBR1100 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 85 °C, rectangular waveform 10
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 50
TJ = 25 °C, I
AS
Current decaying linearly to zero in 1 µs
Frequency limited by, T
= 0.5 A, L = 8 mH 1.0 mJ
AS
maximum VA = 1.5 x VR typical
J
Following any rated load
condition and with rated
V
applied
RRM
200
0.5 A
A
Document Number: 93438 For technical questions, contact: diodes-tech@vishay.com
Revision: 06-Nov-08 1
www.vishay.com
MBR1100
Vishay High Power Products
Schottky Rectifier, 1 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop
See fig. 1
V
FM
2 A 0.96
(1)
1 A
2 A 0.78
Maximum reverse leakage current
See fig. 2
I
RM
Typical junction capacitance C
Typical series inductance L
T
S
TJ = 25 °C
(1)
T
= 125 °C 1.0
J
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C 35 pF
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.85
0.68
0.5
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Approximate weight
Marking device Case style DO-204AL (DO-41) (JEDEC) MBR1100
Notes
dP
(1)
------------dT
(2)
Mounted 1" square PCB, thermal probe connected to lead 2 mm from package
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
, T
T
J
Stg
DC operation
(2)
R
thJL
See fig. 4
- 40 to 150 °C
80 °C/W
0.33 g
0.012 oz.
V
mA
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93438
2 Revision: 06-Nov-08
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