Vishay MBR10T100 Data Sheet
TO-220AC
PRODUCT SUMMARY
I
F(AV)
V
R
V
at 10 A at 125 °C 0.68 V
F
Vishay High Power Products
High Performance
Schottky Generation 5.0, 10 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
vs. IR trade off for high efficiency
F
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
cathode
1
Cathode
Base
3
Anode
10 A
100 V
MBR10T100
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
V
T
RRM
F
J
10 Apk, TJ = 125 °C (typical) 0.62
Range - 55 to 175 °C
100
V
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS MBR10T100 UNITS
Maximum DC reverse voltage V
TJ = 25 °C 100 V
R
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 159 °C, rectangular waveform 10 A
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 200
TJ = 25 °C, IAS = 3 A, L = 12 mH 54 mJ
AS
Limited by frequency of operation and time pulse duration so
that T
< TJ max. IAS at TJ max. as a function of time pulse
J
See fig. 8
Following any rated load
condition and with rated
V
applied
RRM
T
850
I
AS
max.
J
at
A
A
Document Number: 94537 For technical questions, contact: diodes-tech@vishay.com
Revision: 24-Jul-08 1
www.vishay.com
MBR10T100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
10 A
Forward voltage drop per leg V
FM
(1)
10 A
20 A - 0.88
20 A - 0.8
Reverse leakage current per leg I
Junction capacitance per leg C
Series inductance per leg L
RM
T
= 125 °C - 4 mA
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 400 - pF
T
Measured lead to lead 5 mm from package body 8.0 - nH
S
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
R
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AC MBR10T100
T
, T
J
Stg
R
DC operation 2
thJC
R
thCS
Mounting surface, smooth and greased 0.5
-0.79
-0.68
- 100 µA
- 10 000 V/µs
- 55 to 175 °C
°C/W
2g
0.07 oz.
kgf · cm
(lbf · in)
V
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94537
2 Revision: 24-Jul-08
MBR10T100
100
Tj = 175°C
(A)
F
10
Instantaneous Forward Current - I
High Performance
Schottky Generation 5.0, 10 A
(mA)
R
Reverse Current - I
Tj = 125°C
(pF)
T
Vishay High Power Products
100
10
1
0.1
0.01
0.001
0.0001
Fig. 2 - Typical Values of Reverse Current vs.
1000
175°C
150°C
125°C
100°C
75°C
50°C
25°C
020406080100
Reverse Voltage - VR (V)
Reverse Voltage
Tj = 25°C
1
0.0 0.5 1.0 1.5
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
D = 0.75
1
thJC (°C/W)
Thermal Impedance Z
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.1
0.01
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Single Pulse
(Thermal Resistance)
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
100
Junction Capacitance - C
10
0 20 40 60 80 100 120
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Characteristics
thJC
Document Number: 94537 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 24-Jul-08 3
Loading...