Vishay MBR10..PbF Series Data Sheet

TO-220AC

PRODUCT SUMMARY

I

F(AV)

V

R

I

RM

Schottky Rectifier, 10 A

FEATURES

Base

cathode

2

1

Cathode

15 mA at 125 °C

Anode

10 A

35/45 V

3

• 150 °C TJ operation

• TO-220 and D

• High frequency operation

• Low forward voltage drop

• High purity, high temperature epoxy
encapsulation for enhanced mechanical strength and
moisture resistance

• Guard ring for enhanced ruggedness and long term
reliability

• Lead (Pb)-free (“PbF” suffix)

• Designed and qualified for industrial level

DESCRIPTION

This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.

MBR10..PbF Series

Vishay High Power Products

2

PAK packages

Pb-free

Available

RoHS*

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

I

FRM

V

RRM

I

FSM

V

F

T

J

Rectangular waveform 10

TC = 135 °C 20

35/45 V

tp = 5 µs sine 1060 A

10 Apk, TJ = 125 °C 0.57 V

Range - 65 to 150 °C

A

VOLTAGE RATINGS

PARAMETER SYMBOL MBR1035PbF MBR1045PbF UNITS

Maximum DC reverse voltage V

Maximum working peak reverse voltage V

R

RWM

35 45 V

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Peak repetitive forward current I

Non-repetitive peak surge current I

Non-repetitive avalanche energy E

Repetitive avalanche current I

F(AV)

FRM

FSM

AR

TC = 135 °C, rated V

Rated VR, square wave, 20 kHz, TC = 135 °C 20

5 µs sine or 3 µs rect. pulse

Surge applied at rated load conditions halfwave,
single phase, 60 Hz

TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ

AS

Current decaying linearly to zero in 1 µs
Frequency limited by T

R

Following any rated load condition
and with rated V

maximum VA = 1.5 x VR typical

J

RRM

applied

10

1060

150

2A

A

A

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94284 For technical questions, contact: [e-mail]
Revision: 14-Aug-08 1

www.vishay.com

MBR10..PbF Series

Vishay High Power Products

Schottky Rectifier, 10 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

20 A TJ = 25 °C 0.84

Maximum forward voltage drop V

FM

(1)

20 A 0.72

Maximum instantaneous reverse current I

Threshold voltage V

Forward slope resistance r

Maximum junction capacitance C

Typical series inductance L

RM

F(TO)

T

= 125 °C 15

J

TJ = TJ maximum

t

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 600 pF

T

Measured from top of terminal to mounting plane 8.0 nH

S

TJ = 25 °C

(1)

Maximum voltage rate of change dV/dt Rated V

T

= 125 °C

J

Rated DC voltage

R

0.57

0.1

0.354 V

17.6 mΩ

10 000 V/µs

Note

(1)

Pulse width < 300 µs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

J

Stg

DC operation 2.0

R

thJC

R

thCS

Mounting surface, smooth and greased
(only for TO-220)

Approximate weight

Mounting torque

minimum 6 (5)

maximum 12 (10)

Marking device Case style TO-220AC MBR1045

- 65 to 150

- 65 to 175

0.50

2g

0.07 oz.

kgf · cm
(lbf · in)

V10 A

mA

°C

°C/W

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94284

2 Revision: 14-Aug-08

MBR10..PbF Series

100

TJ = 150 °C
T

= 125 °C

10

1

- Instantaneous Forward Current (A)

F

I

J

= 25 °C

T

J

VFM - Forward Voltage Drop (V)

Schottky Rectifier, 10 A

1.40.2 0.4 0.6 0.8 1.0 1.2 1.6

1.8

- Reverse Current (mA)

R

I

Vishay High Power Products

100

10

1

0.1

0.01

0.001

0.0001

TJ = 125 °C

TJ = 75 °C

TJ = 25 °C

0 20253545

51015 30 40

VR - Reverse Voltage (V)

TJ = 150 °C

TJ = 100 °C

TJ = 50 °C

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1000

10

1

0.1

- Thermal Impedance (°C/W)

thJC

Z

0.01

0.00001

Single pulse

(thermal resistance)

0.0001 0.001 0.01

TJ = 25 °C

- Junction Capacitance (pF)

T

C

100

10 30 4020 50

0

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20

0.1 1.0 10

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

P

DM

t

1

t

2

.

1/t2

+ T

thJC

C

100

Document Number: 94284 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 14-Aug-08 3