Vishay MBR10..PbF Series Data Sheet

TO-220AC
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
Schottky Rectifier, 10 A
Base
cathode
2
1
Cathode
15 mA at 125 °C
Anode
10 A
35/45 V
3
• 150 °C TJ operation
• TO-220 and D
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term reliability
• Lead (Pb)-free (“PbF” suffix)
• Designed and qualified for industrial level
DESCRIPTION
This Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MBR10..PbF Series
Vishay High Power Products
2
PAK packages
Pb-free
Available
RoHS*
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 10
TC = 135 °C 20
35/45 V
tp = 5 µs sine 1060 A
10 Apk, TJ = 125 °C 0.57 V
Range - 65 to 150 °C
A
VOLTAGE RATINGS
PARAMETER SYMBOL MBR1035PbF MBR1045PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
35 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Peak repetitive forward current I
Non-repetitive peak surge current I
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
FRM
FSM
AR
TC = 135 °C, rated V
Rated VR, square wave, 20 kHz, TC = 135 °C 20
5 µs sine or 3 µs rect. pulse
Surge applied at rated load conditions halfwave, single phase, 60 Hz
TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ
AS
Current decaying linearly to zero in 1 µs Frequency limited by T
R
Following any rated load condition and with rated V
maximum VA = 1.5 x VR typical
J
RRM
applied
10
1060
150
2A
A
A
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94284 For technical questions, contact: diodes-tech@vishay.com Revision: 14-Aug-08 1
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MBR10..PbF Series
Vishay High Power Products
Schottky Rectifier, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
20 A TJ = 25 °C 0.84
Maximum forward voltage drop V
FM
(1)
20 A 0.72
Maximum instantaneous reverse current I
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance C
Typical series inductance L
RM
F(TO)
T
= 125 °C 15
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 600 pF
T
Measured from top of terminal to mounting plane 8.0 nH
S
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
T
= 125 °C
J
Rated DC voltage
R
0.57
0.1
0.354 V
17.6 mΩ
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance, junction to case
Typical thermal resistance, case to heatsink
J
Stg
DC operation 2.0
R
thJC
R
thCS
Mounting surface, smooth and greased (only for TO-220)
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AC MBR1045
- 65 to 150
- 65 to 175
0.50
2g
0.07 oz.
kgf · cm (lbf · in)
V10 A
mA
°C
°C/W
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Document Number: 94284
2 Revision: 14-Aug-08
MBR10..PbF Series
100
TJ = 150 °C T
= 125 °C
10
1
- Instantaneous Forward Current (A)
F
I
J
= 25 °C
T
J
VFM - Forward Voltage Drop (V)
Schottky Rectifier, 10 A
1.40.2 0.4 0.6 0.8 1.0 1.2 1.6
1.8
- Reverse Current (mA)
R
I
Vishay High Power Products
100
10
1
0.1
0.01
0.001
0.0001
TJ = 125 °C
TJ = 75 °C
TJ = 25 °C
0 20253545
51015 30 40
VR - Reverse Voltage (V)
TJ = 150 °C
TJ = 100 °C
TJ = 50 °C
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
10
1
0.1
- Thermal Impedance (°C/W)
thJC
Z
0.01
0.00001
Single pulse
(thermal resistance)
0.0001 0.001 0.01
TJ = 25 °C
- Junction Capacitance (pF)
T
C
100
10 30 4020 50
0
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
0.1 1.0 10
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
P
DM
t
1
t
2
.
1/t2
+ T
thJC
C
100
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Revision: 14-Aug-08 3
MBR10..PbF Series
Vishay High Power Products
150
145
140
Square wave (D = 0.50)
135
130
125
Allowable Case Temperature (°C)
120
01536912
Fig. 5 - Maximum Allowable Case Temperature vs.
applied
Rated V
R
See note (1)
I
- Average Forward Current (A)
F(AV)
Average Forward Current
1000
Schottky Rectifier, 10 A
DC
10
D = 0.20 D = 0.25 D = 0.33
8
D = 0.50 D = 0.75
6
4
2
Average Power Loss (W)
0
024 16
I
- Average Forward Current (A)
F(AV)
Fig. 6 - Forward Power Loss Characteristics
DC
68
10
RMS limit
12 14
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
F(AV)
At any rated load condition and with rated V
100
10
following surge
- Non-Repetitive Surge Current (A)
FSM
I
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
) x R
thJC
;
F(AV)
/D) (see fig. 6);
REV
x VFM at (I
RRM
100
applied
R
1000
10 000
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Document Number: 94284
4 Revision: 14-Aug-08
MBR10..PbF Series
Schottky Rectifier, 10 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95221
Part marking information http://www.vishay.com/doc?95216
SPICE model http://www.vishay.com/doc?95293
MBR 10 45 PbF
1324
1 - Schottky MBR series
2 - Currrent rating (10 = 10 A)
3 - Voltage ratings
4 - None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
35 = 35 V 45 = 45 V
Document Number: 94284 For technical questions, contact: diodes-tech@vishay.com Revision: 14-Aug-08 5
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DIMENSIONS in millimeters and inches
(6)
E
(7)
E2
Q
(6)
D
D1
13
L3
L4
2
A
Ø P
0.014 AB
Detail B
L
MM
C
(6)
H1
(7)
TO-220AC
B
Seating
plane
A
A
A1
Outline Dimensions
Vishay Semiconductors
123
DL1D
H1
θ
E
Thermal pad
D2 (6)
E1 (6)
2 x b2 2 x b
Lead assignments
Diodes 1 + 2 - Cathode
3 - Anode
CC
Detail B
Lead tip
SYMBOL
e1
MM
0.015 AB
c
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A
A2
NOTES SYMBOL
View A - A
Conforms to JEDEC outline TO-220AC
MILLIMETERS INCHES
NOTES
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Dimension b1, b3 and c1 apply to base metal only
(5)
Controlling dimension: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2 and E1
(7)
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8)
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 07-Mar-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
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