VISHAY LS485S Datasheet

Silicon Epitaxial Planar Diodes

g

g

Applications

General purposes

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Peak reverse voltage IR= 100mA V
Reverse voltage V
Forward current I
Forward peak current f=50Hz I
Peak forward surge current tp=1ms I
Junction temperature T
Storage temperature range T

LS485S

Vishay Telefunken

96 12009

RRM

R

F

FM

FSM

j

stg

200 V
180 V
200 mA
500 mA

4 A

150

–55...+150

°

C

°

C

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient on PC board 50mmx50mmx1.6mm R

thJA

500 K/W

Electrical Characteristics

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=10mA, Tj= –40°C V

IF=10mA, Tj= 25°C V
IF=10mA, Tj= 125°C V

Reverse current VR= 10V, Tj= –40°C I

VR= 10V, Tj= 25°C I
VR= 10V, Tj=125°C I

Breakdown voltage IR=100mA, Tj= –40°C V

IR=100mA, Tj= 25°C V
IR=100mA, Tj= 125°C V

Diode capacitance VR=0V, f=1MHz C

F
F

F
R
R
R

(BR)
(BR)
(BR)

D

200 V
200 V
200 V

1.2 V

1.1 V

1.1 V
25 nA
25 nA

150 nA

5 pF

Document Number 85565
Rev. 1, 09-Apr-99 1 (3)

www.vishay.de • FaxBack [phone]

LS485S

Vishay Telefunken

Dimensions in mm

96 12071

www.vishay.de • FaxBack [phone] Document Number 85565

Rev. 1, 09-Apr-992 (3)