VISHAY LS4150 Datasheet

Silicon Epitaxial Planar Diode

Features

D

Electrical data identical with the device 1N4150

D

Quadro Melf package

LS4150

Vishay Telefunken

Applications

High speed switch and general purpose use in com­puter and industrial applications

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Forward current I
Average forward current VR=0 I
Power dissipation P
Junction temperature T
Storage temperature range T

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient on PC board 50mmx50mmx1.6mm R

thJA

RRM

R

FSM

F

FAV

V

stg

j

96 12009

50 V
50 V

4 A
600 mA
300 mA
500 mW
175

–65...+175

500 K/W

°

C

°

C

Document Number 85562
Rev. 3, 01-Apr-99 1 (4)

www.vishay.de • FaxBack [phone]

LS4150

g

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=1mA V

IF=10mA V
IF=50mA V
IF=100mA V
IF=200mA V

Reverse current VR=50V I

VR=50V, Tj=150°C I
Diode capacitance VR=0, f=1MHz, VHF=50mV C
Reverse recovery time IF=IR=10...100mA, iR=0.1xIR,

R

=100

W

L

Characteristics (Tj = 25_C unless otherwise specified)

t

0.54 0.62 V

F

0.66 0.74 V

F

0.76 0.86 V

F

0.82 0.92 V

F

0.87 1.0 V

F
R
R

D
rr

100 nA
100 nA

2.5 pF
4 ns

100

10

m

1

0.1

R

I – Reverse Current ( A )

0.01

94 9100

Figure 1. Reverse Current vs. Junction Temperature

Scattering Limit

VR=50V

0 40 80 120 160

Tj – Junction Temperature ( °C )

200

1000

100

Scattering Limit

10

1

F

I – Forward Current ( mA )

0.1
0 0.4 0.8 1.2 1.6

94 9162

Figure 2. Forward Current vs. Forward Voltage

VF – Forward Voltage ( V )

Tj=25°C

2.0

www.vishay.de • FaxBack [phone] Document Number 85562

Rev. 3, 01-Apr-992 (4)