VISHAY LS4148, LS4448 Datasheet
Silicon Epitaxial Planar Diodes
Features
D
Electrical data identical with the devices 1N4148
and 1N4448 respectively
D
Quadro Melf package
LS4148.LS4448
Vishay Telefunken
Applications
Extreme fast switches
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Repetitive peak forward current I
Forward current I
Average forward current VR=0 I
Power dissipation P
Junction temperature T
Storage temperature range T
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm R
thJA
RRM
R
FSM
FRM
F
FAV
V
j
stg
96 12009
100 V
75 V
2 A
500 mA
300 mA
150 mA
500 mW
175
–65...+175
500 K/W
°
C
°
C
Document Number 85561
Rev. 3, 01-Apr-99 1 (4)
www.vishay.de • FaxBack +1-408-970-5600
LS4148.LS4448
g
y
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=5mA LS4448 V
IF=50mA LS4148 V
IF=100mA LS4448 V
Reverse current VR=20V I
VR=20V, Tj=150°C I
VR=75V I
Breakdown voltage IR=100mA, tp/T=0.01,
tp=0.3ms
Diode capacitance VR=0, f=1MHz, VHF=50mV C
Rectification efficiency VHF=2V, f=100MHz
Reverse recovery time IF=IR=10mA, iR=1mA t
IF=10mA, VR=6V, iR=0.1xIR,
RL=100
W
Characteristics (Tj = 25_C unless otherwise specified)
V
F
F
F
R
R
R
(BR)
D
h
r
rr
t
rr
0.62 0.72 V
0.86 1 V
0.93 1 V
25 nA
50
m
5
m
100 V
4 pF
45 %
8 ns
4 ns
A
A
1000
LL 4148
100
Scattering Limit
10
1
F
I – Forward Current ( mA )
0.1
0 0.4 0.8 1.2 1.6
94 9096
Figure 1. Forward Current vs. Forward Voltage
VF – Forward Voltage ( V )
Tj=25°C
2.0
1000
LL 4448
100
Scattering Limit
10
1
F
I – Forward Current ( mA )
0.1
0 0.4 0.8 1.2 1.6
94 9097
Figure 2. Forward Current vs. Forward Voltage
VF – Forward Voltage ( V )
Tj=25°C
2.0
www.vishay.de • FaxBack +1-408-970-5600 Document Number 85561
Rev. 3, 01-Apr-992 (4)
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