VISHAY LL4151 Datasheet

Silicon Epitaxial Planar Diodes

y

Features

D

Electrical data identical with the device 1N4151

Applications

Extreme fast switches

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Repetitive peak forward current I
Forward current I
Average forward current VR=0 I
Power dissipation P
Junction temperature T
Storage temperature range T

LL4151

Vishay Telefunken

94 9371

RRM

R
FSM
FRM

F

FAV

V

j

stg

75 V
50 V

2 A
500 mA
300 mA
150 mA
500 mW
175

–65...+175

°

C

°

C

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient on PC board 50mmx50mmx1.6mm R

thJA

500 K/W

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=50mA V
Reverse current VR=50V I

VR=50V, Tj=150°C I
Breakdown voltage IR=5mA, tp/T=0.01, tp=0.3ms V
Diode capacitance VR=0, f=1MHz, VHF=50mV C
Reverse recovery IF=IR=10mA, iR=1mA t

time

Document Number 85559
Rev. 3, 01-Apr-99 1 (4)

IF=10mA, VR=6V, iR=0.1xIR, RL=100

W

F
R
R

(BR)

D
rr

t

rr

www.vishay.de • FaxBack [phone]

0.88 1 V
50 nA
50

m

75 V

2 pF
4 ns
2 ns

A

LL4151

Vishay Telefunken

Characteristics (Tj = 25_C unless otherwise specified)

100

Scattering Limit

10

m

1

0.1

R

I – Reverse Current ( A )

VR=50V

200

94 9151

0.01
0 40 80 120 160

Tj – Junction Temperature ( °C )

Figure 1. Reverse Current vs. Junction Temperature

1000

100

10

Tj=100°C

3.0

2.5

2.0

1.5

1.0

D

C – Diode Capacitance ( pF )

0.5

0

0.1 1 10

94 9153

VR – Reverse Voltage ( V )

f=1MHz
T

=25°C

j

100

Figure 3. Diode Capacitance vs. Reverse Voltage

Tj=25°C

VF – Forward Voltage ( V )

F

I – Forward Current ( mA )

94 9152

1

0.1
0 0.4 0.8 1.2 1.6

Figure 2. Forward Current vs. Forward Voltage

2.0

www.vishay.de • FaxBack [phone] Document Number 85559

Rev. 3, 01-Apr-992 (4)