VISHAY LL4150 Datasheet

Silicon Epitaxial Planar Diodes

g

Features

D

Low forward voltage drop

D

High forward current capability

Applications

LL4150

Vishay Telefunken

High speed switch and general purpose use in com­puter and industrial applications

Absolute Maximum Ratings

Tj = 25_C

Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current tp=1ms I
Forward current I
Average forward current VR=0 I
Power dissipation P
Junction temperature T
Storage temperature range T

Maximum Thermal Resistance

Tj = 25_C

Parameter Test Conditions Symbol Value Unit

Junction ambient on PC board 50mmx50mmx1.6mm R

thJA

Electrical Characteristics

Tj = 25_C

Parameter Test Conditions Type Symbol Min Typ Max Unit

Forward voltage IF=1mA V

IF=10mA V
IF=50mA V
IF=100mA V
IF=200mA V

Reverse current VR=50V I

VR=50V, Tj=150°C I
Diode capacitance VR=0, f=1MHz, VHF=50mV C
Reverse recovery time IF=IR=10...100mA, iR=0.1xIR,

RL=100

W

F
F
F
F

F
R
R

D

t

rr

94 9371

RRM

R

FSM

F

FAV

V

j

stg

50 V
50 V

4 A
600 mA
300 mA
500 mW
200

–65...+200

500 K/W

0.54 0.62 V

0.66 0.74 V

0.76 0.86 V

0.82 0.92 V

0.87 1.0 V

°

C

°

C

100 nA
100

m

2.5 pF
4 ns

A

Document Number 85558
Rev. 3, 01-Apr-99 1 (3)

www.vishay.de • FaxBack [phone]

LL4150

Vishay Telefunken

Characteristics (Tj = 25_C unless otherwise specified)

100

Scattering Limit

VR=50V

0 40 80 120 160

Tj – Junction Temperature ( °C )

m

R

I – Reverse Current ( A )

94 9100

10

1

0.1

0.01

Figure 1. Reverse Current vs. Junction Temperature

Dimensions in mm

200

1000

100

Scattering Limit

10

1

F

I – Forward Current ( mA )

Tj=25°C

94 9162

0.1
0 0.4 0.8 1.2 1.6

VF – Forward Voltage ( V )

Figure 2. Forward Current vs. Forward Voltage

2.0

96 12070

www.vishay.de • FaxBack [phone] Document Number 85558

Rev. 3, 01-Apr-992 (3)