VISHAY LL4148 Technical data
Small Signal Fast Switching Diodes
Features
• Silicon Epitaxial Planar Diodes
• Electrical data identical with the devices
1N4148 and 1N4448 respectively
• Lead (Pb)-free component
• Component in acc. to RoHS 2002/95/EC and
WEEE 2002/96/EC
e2
LL4148 / LL4448
Vishay Semiconductors
Applications
94 9371
• Extreme fast switches
Mechanical Data
Case: MiniMELF Glass case (SOD80)
Weight: approx. 31 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Par t Type differentiation Ordering code Remarks
LL4148 V
LL4448 V
= 100 V, VF = max. 1000 mV at IF = 50 mA LL4148-GS18 or LL4148-GS08 Tape and Reel
RRM
= 100 V, VF = max. 1000 mV at IF = 100 mA LL4448-GS18 or LL4448-GS08 Tape and Reel
RRM
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current t
Repetitive peak forward current I
Forward continuous current I
Average forward current V
Power dissipation P
= 1 µs I
p
= 0 I
R
RRM
R
FSM
FRM
F
FAV
V
100 V
75 V
2A
500 mA
300 mA
150 mA
500 mW
Thermal Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Symbol Val ue Unit
Junction to ambient air on PC board
Junction temperature T
Storage temperature range T
Document Number 85557
Rev. 1.8, 24-Mar-06
50 mm x 50 mm x 1.6 mm
R
thJA
j
stg
500 K/W
175 °C
- 65 to + 175 °C
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1
LL4148 / LL4448
Vishay Semiconductors
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Parameter Test condition Par t Symbol Min Ty p. Max Unit
Forward voltage I
Reverse current V
Breakdown voltage I
Diode capacitance V
Rectification efficiency V
Reverse recovery time I
Typical Characteristics
T
= 25 °C, unless otherwise specified
amb
= 5 mA LL4448 V
F
I
= 50 mA LL4148 V
F
I
= 100 mA LL4448 V
F
= 20 V I
R
V
= 20 V, Tj = 150 °C I
R
V
= 75 V I
R
= 100 µA, tp/T = 0.01,
R
= 0.3 ms
t
p
= 0, f = 1 MHz, VHF = 50 mV C
R
= 2 V, f = 100 MHz η
HF
= IR = 10 mA,
F
= 1 mA
i
R
I
= 10 mA, VR = 6 V,
F
= 0.1 x IR, RL = 100 Ω
i
R
F
F
F
R
R
R
V
(BR)
D
r
t
rr
t
rr
620 720 mV
860 1000 mV
930 1000 mV
25 nA
50 µA
5µA
100 V
4pF
45 %
8ns
4ns
1000
LL4148
100
10
1
F
I - Forward Current (mA)
0.1
0 0.4 0.8 1.2 1.6
94 9096
VF- Forward Voltage (V)
Scattering Limit
Tj= 25 °C
Figure 1. Forward Current vs. Forward Voltage
2.0
1000
LL4448
100
10
1
F
I - Forward Current (mA)
0.1
0 0.4 0.8 1.2 1.6
94 9097
VF- Forward Voltage (V)
Scattering Limit
Tj=25° C
Figure 2. Forward Current vs. Forward Voltage
2.0
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2
Document Number 85557
Rev. 1.8, 24-Mar-06
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