Vishay LL4148, LL4448 Schematics
www.vishay.com
Small Signal Fast Switching Diodes
MECHANICAL DATA
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
LL4148, LL4448
Vishay Semiconductors
FEATURES
• Silicon epitaxial planar diode
• Electrical data identical with the devices 1N4148
and 1N4448 respectively
• AEC-Q101 qualified
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
PARTS TABLE
PART TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING
V
= 100 V,
LL4148
LL4448
V
= max. 1000 mV at IF = 50 mA
F
V
= max. 1000 mV at IF = 100 mA
F
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
Reverse voltage V
Peak forward surge current t
Repetitive peak forward current I
Forward continuous current I
Average forward current V
Power dissipation
Note
(1)
Valid provided that electrodes are kept at ambient temperature
THERMAL CHARACTERISTICS (T
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
Junction temperature T
Storage temperature range T
Note
(1)
Valid provided that electrodes are kept at ambient temperature
RRM
V
= 100 V,
RRM
(1)
LL4148-GS08 or LL4148-GS18 - Single diode Tape and reel
LL4448-GS08 or LL4448-GS18 - Single diode Tape and reel
= 25 °C, unless otherwise specified)
amb
RRM
R
= 1 μs I
p
= 0 I
R
= 25 °C, unless otherwise specified)
amb
(1)
R
FSM
FRM
F
F(AV)
P
tot
thJA
stg
J
INTERNAL
CONSTRUCTION
100 V
75 V
2A
500 mA
300 mA
150 mA
500 mW
300 K/W
175 °C
- 65 to + 175 °C
REMARKS
Rev. 1.9, 27-Mar-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 85557
www.vishay.com
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I-Forward Current (mA)
F
VF- Forward Voltage (V)
2.0
94 9096
LL4148
Scattering Limit
Tj= 25 °C
94 9097
Tj=25° C
LL4448
Scattering Limit
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I-Forward Current (mA)
F
VF-Forward Voltage (V)
2.0
1
10
100
1000
I
R
- Reverse Current (nA)
VR- Reverse Voltage (V)
10 1 100
94 9098
Tj = 25 °C
Scattering Limit
0.1 1 10
0
0.5
1.0
1.5
2.0
3.0
C
D
- Diode Capacitance (pF)
100
94 9099
2.5
V
R
- Reverse Voltage (V)
f = 1 MHz
T
j
= 25 °C
LL4148, LL4448
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
= 5 mA LL4448 V
F
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
I
= 50 mA LL4148 V
F
I
= 100 mA LL4448 V
F
V
R
V
= 20 V, Tj = 150 °C I
R
V
R
I
= 100 μA, tp/T = 0.01,
R
t
= 0.3 ms
p
V
= 0 V, f = 1 MHz,
R
V
= 50 mV
HF
I
= IR = 10 mA,
F
i
= 1 mA
R
= 10 mA, VR = 6 V,
I
F
i
= 0.1 x IR, RL = 100
R
TYPICAL CHARACTERISTICS (T
= 20 V I
= 75 V I
V
= 25 °C, unless otherwise specified)
amb
C
R
R
R
(BR)
t
rr
F
F
F
D
620 720 mV
860 1000 mV
930 1000 mV
25 nA
50 μA
5μA
100 V
4pF
8
4
ns
Rev. 1.9, 27-Mar-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Forward Current vs. Forward Voltage
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Current vs. Reverse Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
2
Document Number: 85557
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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