Small Signal Schottky Barrier Diodes
g
Features
D
Integrated protection ring against
static discharge
D
Low capacitance
D
Low leakage current
D
Low forward voltage drop
LL103A–LL103C
Vishay Semiconductors
Applications
HF–Detector
Protection circuit
Small battery charger
AC–DC / DC–DC converters
94 9371
Order Instruction
Type Type Differentiation Ordering Code Remarks
LL103A VR=40 V, VF@IF20mA max. 0.37 V LL103A–GS08
LL103B VR=30 V, VF@IF20mA max. 0.37 V LL103B–GS08 Tape and Reel
LL103C VR=20 V, VF@IF20mA max. 0.37 V LL103C–GS08
Absolute Maximum Ratings
Tj = 25_C
Parameter Test Conditions Type Symbol Value Unit
LL103A V
Reverse voltage LL103B V
LL103C V
Peak forward surge current tp=300ms, square pulse I
Power dissipation l=4 mm, TL=constant P
Junction temperature T
Storage temperature range T
FSM
R
R
R
tot
j
stg
40 V
30 V
20 V
15 A
400 mW
125
–65...+150
°
C
°
C
Maximum Thermal Resistance
Tj = 25_C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4 mm, TL=constant R
Document Number 85630
Rev. 1, 22-Nov-00
thJA
250 K/W
www.vishay.com
1 (4)
LL103A–LL103C
R
Voltage
R
m
g
Forward voltage drop
Vishay Semiconductors
Electrical Characteristics
Tj = 25_C
Parameter Test Conditions Type Symbol Min Typ Max Unit
everse Breakdown
IR=10mA LL103B V
VR= 30 V LL103A I
Leakage current VR= 20 V LL103B I
VR= 10 V LL103C I
IF=20mA V
p
IF=200mA V
Junction capacitance VR= 0 V, f= 1MHz C
Reverse recovery time IF=IR=50 to 200mA, recover to 0.1 I
Characteristics (Tj = 25_C unless otherwise specified)
LL103A V
LL103C V
R
(BR)R
(BR)R
(BR)R
R
R
R
F
F
D
t
rr
40 V
30 V
20 V
5
m
5
m
5
m
0.37 V
0.6 V
50 pF
10 ns
A
A
A
1000
1000.000
100
100.000
10
10.000
1
1.000
0.100
0.1
0.010
0.01
F
I – Forward Current ( mA)
0.001
0 100 200 300 400 500 600 700 800 9001000
VF – Forward Voltage ( mV )16765
Figure 1. Forward Current vs. Forward Voltage
5
4
3
2
F
1
I – Forward Current ( A)
10000
1000
m
100
10
R
I – Reverse Current ( A )
1
0 20 40 60 80 100 120 140 160
Tj – Junction Temperature ( °C )16767
Figure 3. Reverse Current vs. Junction Temperature
30
25
20
15
10
D
5
C – Diode Capacitance ( pF )
f=1MHz
0
0 0.5 1.0 1.5 2.0
Figure 2. Forward Current vs. Forward Voltage
www.vishay.com Document Number 85630
2 (4) Rev. 1, 22-Nov-00
0
0 5 10 15 20 25 30
VF – Forward Voltage ( V )16766
VR – Reverse Voltage ( V )16768
Figure 4. Diode Capacitance vs. Reverse Voltage
25
A
20
15
10
5
0
tot
0.1 1.0 10.0
I – Typ. Non Repetitve Forward Surge Current (
16769
tp – Pulse width ( ms )
Figure 5. Typ. Non Repetitive Forward Surge Current vs.
Pulse width
Dimensions in mm
LL103A–LL103C
Vishay Semiconductors
96 12070
Document Number 85630
Rev. 1, 22-Nov-00
www.vishay.com
3 (4)
LL103A–LL103C
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com Document Number 85630
4 (4) Rev. 1, 22-Nov-00
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