VISHAY LL 101A SMD Datasheet
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Available
Models
Small Signal Schottky Diode
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: MiniMELF (SOD-80)
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5K per 7" reel (8 mm tape), 12.5K/box
LL101A, LL101B, LL101C
Vishay Semiconductors
FEATURES
• For general purpose applications
• The LL101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guard ring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast switching
and low logic level applications
• Integrated protection ring against static discharge
•Low capacitance
• Low leakage current
• This diode is also available in the DO-35 (DO-204AH) case
with type designation SD101A, SD101B, SD101C and in
the SOD-123 case with type designation SD101AW,
SD101BW, SD101CW
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• HF-detector
• Protection circuit
• Diode for low currents wits a low supply voltage
• Small battery charger
• Power supplies
• DC/DC converter for notebooks
PARTS TABLE
PART TYPE DIFFERENTIATION ORDERING CODE
LL101A V
LL101B V
LL101C V
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage
Power dissipation (infinite heatsink)
Forward continuous current I
Maximum single cycle surge 10 μs square wave I
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.5, 01-Jun-17
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
= 60 V, VF at IF = 1 mA max. 410 mV LL101A-GS18 or LL101A-GS08 Single Tape and reel
R
= 50 V, VF at IF = 1 mA max. 400 mV LL101B-GS18 or LL101B-GS08 Single Tape and reel
R
= 40 V, VF at IF = 1 mA max. 390 mV LL101C-GS18 or LL101C-GS08 Single Tape and reel
R
= 25 °C, unless otherwise specified)
amb
LL101A V
LL101B V
LL101C V
(1)
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RRM
RRM
RRM
P
FSM
tot
F
CIRCUIT
CONFIGURATION
60 V
50 V
40 V
400 mW
30 mA
2A
Document Number: 85626
REMARKS
www.vishay.com
LL101A, LL101B, LL101C
Vishay Semiconductors
THERMAL CHARACTERISTICS (T
= 25 °C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction temperature T
Storage temperature range T
Thermal resistance junction to ambient air
ELECTRICAL CHARACTERISTICS (T
On PC board
50 mm x 50 mm x 1.6 mm
= 25 °C, unless otherwise specified)
amb
R
j
stg
thJA
125 °C
-65 to +150 °C
320 K/W
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
60 V
50 V
40 V
200 nA
200 nA
200 nA
0.410 V
0.400 V
0.390 V
1000 mV
950 mV
900 mV
2.0 pF
2.1 pF
2.2 pF
1ns
Reverse Breakdown Voltage I
Leakage current
Forward voltage drop
V
= 0 V, f = 1 MHz LL101A C
R
Diode capacitance
Reverse recovery time I
= 0 V, f = 1 MHz
V
R
= IR = 5 mA, recover to 0.1 I
F
LL101A V
= 10 μA
R
LL101B V
LL101C V
V
= 50 V LL101A I
R
V
= 40 V LL101B I
R
V
= 30 V LL101C I
R
I
= 1 mA LL101A V
F
I
= 1 mA LL101B V
F
I
= 1 mA LL101C V
F
LL101A V
I
= 15 mA
F
LL101B V
LL101C V
LL101B C
LL101C C
R
(BR)
(BR)
(BR)
R
R
R
t
rr
F
F
F
F
F
F
D
D
D
TYPICAL CHARACTERISTICS (T
gll101a_01
= 25 °C, unless otherwise specified)
amb
Fig. 1 - Typ. IF vs. VF for Primary Conduction through the Schottky
Barrier
gll101a_02
Fig. 2 - Typ. I
of Combination Schottky Barrier and PN Junction
F
Guard Ring
Rev. 1.5, 01-Jun-17
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 85626
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