VISHAY K817P, K827PH, K847PH Technical data
K817P/ K827PH/ K847PH
Optocoupler, Phototransistor Output
Features
• Endstackable to 2.54 mm (0.1") spacing
• DC isolation test voltage V
• Low coupling capacitance of typical 0.3 pF
• Current Transfer Ratio (CTR) selected into groups
• Low temperature coefficient of CTR
• Wide ambient temperature range
• Available in single, dual and quad channel packages
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Agency Approvals
• UL1577, File No. E76222 System Code U, Double
Protection
• CSA 93751
= 5000 V
ISO
RMS
17203_1
CE
1
AC
4PIN
Vishay Semiconductors
8 PIN
C
16 PIN
e3
Pb
Pb-free
Applications
Programmable logic controllers, modems, answering
machines, general applications
Description
In the K817P/ K827PH/ K847PH parts each channel
consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin (single); 8 pin (dual); 16-pin (quad) plastic dual inline
package.
The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.
Order Information
Part Remarks
K817P CTR 50 - 600 %, DIP-4
K817P1 CTR 40 - 80 %, DIP-4
K817P2 CTR 63 - 125 %, DIP-4
K817P3 CTR 100 - 200 %, DIP-4
K817P4 CTR 160 - 320 %, DIP-4
K817P5 CTR 50 - 150 %, DIP-4
K817P6 CTR 100 - 300 %, DIP-4
K817P7 CTR 80 - 160 %, DIP-4
K817P8 CTR 130 - 260 %, DIP-4
K817P9 CTR 200 - 400 %, DIP-4
K827PH CTR 50 - 600 %, DIP-8
K847PH CTR 50 - 600 %, DIP-16
Document Number 83522
Rev. 1.7, 26-Oct-04
www.vishay.com
1
K817P/ K827PH/ K847PH
Vishay Semiconductors
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Paramete r Test condition Symbol Val ue Unit
Reverse voltage V
Forward current I
Forward surge current t
≤ 10 µsI
p
Power dissipation P
Junction temperature T
Output
Paramete r Test condition Symbol Val ue Unit
Collector emitter voltage V
Emitter collector voltage V
Collector current I
Collector peak current t
Power dissipation P
Junction temperature T
/T = 0.5, tp ≤ 10 ms I
p
R
F
FSM
diss
j
CEO
ECO
C
CM
diss
j
6V
60 mA
1.5 A
100 mW
125 °C
70 V
7V
50 mA
100 mA
150 mW
125 °C
Coupler
Paramete r Test condition Symbol Val ue Unit
AC isolation test voltage (RMS) t = 1 min
Total power dissipation P
Operating ambient temperature
range
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T
1)
Related to standard climate 23/50 DIN 50014
1)
V
ISO
tot
T
amb
stg
sld
5000 V
RMS
250 mW
- 40 to + 100 °C
- 55 to + 125 °C
260 °C
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Paramete r Test condition Symbol Min Ty p. Max Unit
Forward voltage I
Junction capacitance V
= 50 mA V
F
= 0 V, f = 1 MHz C
R
F
j
1.25 1.6 V
50 pF
www.vishay.com
2
Document Number 83522
Rev. 1.7, 26-Oct-04
K817P/ K827PH/ K847PH
Output
Parameter Test condition Symbol Min Ty p . Max Unit
Collector emitter voltage I
Emitter collector voltage I
Collector dark current V
Coupler
Parameter Test condition Symbol Min Ty p . Max Unit
Collector emitter saturation
voltage
Cut-off frequency I
Coupling capacitance f = 1 MHz C
Current Transfer Ratio
Parameter Test condition Part Symbol Min Ty p. Max Unit
I
C/IF
= 100 µAV
C
= 100 µAV
E
= 20 V, IF = 0, E = 0 I
CE
= 10 mA, IC = 1 mA V
I
F
= 10 mA, VCE = 5 V,
F
= 100 Ω
R
L
VCE = 5 V, IF = 5 mA K817P CTR 50 600 %
K827PH CTR 50 600 %
K847PH CTR 50 600 %
= 5 V, IF = 10 mA K817P1 CTR 40 80 %
V
CE
K817P2 CTR 63 125 %
K817P3 CTR 100 200 %
K817P4 CTR 160 320 %
= 5 V, IF = 5 mA K817P5 CTR 50 150 %
V
CE
K817P6 CTR 100 300 %
K817P7 CTR 80 160 %
K817P8 CTR 130 260 %
K817P9 CTR 200 400 %
CEO
ECO
CEO
CEsat
f
c
k
Vishay Semiconductors
70 V
7V
100 nA
0.3 V
100 kHz
0.3 pF
Document Number 83522
Rev. 1.7, 26-Oct-04
www.vishay.com
3
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