VISHAY K814P, K824P, K844P Technical data

K814P/ K824P/ K844P

Vishay Semiconductors

Optocoupler, Phototransistor Output, AC input

Features

• Endstackable to 2.54 mm (0.1") spacing

• DC isolation test voltage V

• Low coupling capacitance of typical 0.3 pF

• Current Transfer Ratio (CTR) of typical 100 %

• Low temperature coefficient of CTR

• Wide ambient temperature range

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

= 5000 V

ISO

RMS

CE

Agency Approvals

• UL1577, File No. E76222 System Code U, Double
Protection

• C-UL CSA 22.2, Bulletin 5A

Applications

Feature phones, answering machines, PBX, fax
machines

Description

The K814P/ K824P/ K844P consist of a phototransis­tor optically coupled to 2 gallium arsenide infrared
emitting diodes (reverse polarity) in 4-pin (single); 8
pin (dual) or 16-pin (quad) plastic dual inline package.

17220_1

The elements are mounted on one leadframe provid­ing a fixed distance between input and output for high­est safety requirements.

Order Information

K814P CTR > 20 %, Single Channel, DIP-4

K824P CTR > 20 %, Dual Channel, DIP-8

K844P CTR > 20 %, Quad Channel, DIP-16

AC

4PIN

8 PIN

16 PIN

C

Part Remarks

e3

Pb

Pb-free

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Forward current I

Forward surge current t

Power dissipation P

Junction temperature T

Document Number 83523

Rev. 1.8, 26-Oct-04

≤ 10 µsI

p

F

FSM

diss

± 60 mA

± 1.5 A

100 mW

j

125 °C

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1

K814P/ K824P/ K844P

Vishay Semiconductors

Output

Paramete r Test condition Symbol Value Unit

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

Coupler

Paramete r Test condition Symbol Value Unit

AC Isolation test voltage (RMS) t = 1 min

Total power dissipation P

Operating ambient temperature
range

Storage temperature range T

Soldering temperature 2 mm from case, t ≤ 10 s T

1)

Related to standard climate 23/50 DIN 50014

/T = 0.5, tp ≤ 10 ms I

p

V

ISO

T

CEO

ECO

C

CM

diss

tot

amb

stg

sld

70 V

7V

50 mA

100 mA

150 mW

j

1)

125 °C

5000 V

RMS

250 mW

- 40 to + 100 °C

- 55 to + 125 °C

260 °C

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Paramete r Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

= ± 50 mA V

F

= ± 6 V I

R

F

R

1.25 1.6 V

10 µA

Output

Paramete r Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage I

Emitter collector voltage I

Collector dark current V

= 100 µAV

C

= 100 µAV

E

= 20 V, IF = 0, E = 0 I

CE

CEO

ECO

CEO

70 V

7V

100 nA

Coupler

Paramete r Test condition Symbol Min Ty p. Max Unit

Collector emitter saturation

= ± 10 mA, IC = 1 mA V

I

F

voltage

Cut-off frequency I

= ± 10 mA, VCE = 5 V,

F

= 100 Ω

R

L

Coupling capacitance f = 1 MHz C

CEsat

f

c

k

100 kHz

0.3 pF

0.3 V

Current Transfer Ratio

Paramete r Test condition Par t Symbol Min Ty p. Max Unit

I

C/IF

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VCE = 5 V, IF = ± 5 mA K814P CTR 20 300 %

Document Number 83523

Rev. 1.8, 26-Oct-04

K814P/ K824P/ K844P

Vishay Semiconductors

Switching Characteristics

Para me te r Test condition Symbol Min Ty p. Max Unit

Delay time V

Rise time V

Fall time V

Storage time V

Turn-on time V

Turn-off time V

Turn-on time V

Turn-off time V

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IF = 10 mA, RL = 1 kΩ

S

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 1)

(see figure 1)

(see figure 1)

(see figure 1)

(see figure 1)

(see figure 1)

(see figure 2)

(see figure 2)

t

d

t

r

t

f

t

s

t

on

t

off

t

on

t

off

3.0 µs

3.0 µs

4.7 µs

0.3 µs

6.0 µs

5.0 µs

9.0 µs

18.0 µs

I

I

F

0

F

+ 5 V

IC = 2 mA;

RG = 50 W
t

p

= 0.01

T

tp = 50 Ps

Channel I

Channel II

50 W 100 W

13343

Figure 1. Test circuit, non-saturated operation

0

RG = 50 W
t

p

= 0.01

T

tp = 50 Ps

IF= 10 mA

I

F

50 W 1 kW

+ 5 V

I

C

Channel I

Channel II

adjusted through
input amplitude

Oscilloscope
R

> 1 MW

L

< 20 pF

C

L

Oscilloscope
R

> 1 MW

L

< 20 pF

C

L

I

F

0

I

C

100%

90%

10%

0

t

d

t

t

p

t

d

t

r

t

(= td+tr) turn-on time

on

on

pulse duration
delay time
rise time

t

p

t

r

t

s

t

off

t

s

t

f

t

(= ts+tf) turn-off time

off

Figure 3. Switching Times

96 11698

t

t

f

t

storage time
fall time

13344

Figure 2. Test circuit, saturated operation

Document Number 83523

Rev. 1.8, 26-Oct-04

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