VISHAY K817P, K827PH, K847PH Technical data

K817P/ K827PH/ K847PH

Optocoupler, Phototransistor Output

Features

• Endstackable to 2.54 mm (0.1") spacing

• DC isolation test voltage V

• Low coupling capacitance of typical 0.3 pF

• Current Transfer Ratio (CTR) selected into groups

• Low temperature coefficient of CTR

• Wide ambient temperature range

• Available in single, dual and quad channel pack­ages

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

Agency Approvals

• UL1577, File No. E76222 System Code U, Double
Protection

• CSA 93751

= 5000 V

ISO

RMS

17203_1

CE

1

AC

4PIN

Vishay Semiconductors

8 PIN

C

16 PIN

e3

Pb

Pb-free

Applications

Programmable logic controllers, modems, answering
machines, general applications

Description

In the K817P/ K827PH/ K847PH parts each channel
consist of a phototransistor optically coupled to a gal­lium arsenide infrared-emitting diode in a 4-pin (sin­gle); 8 pin (dual); 16-pin (quad) plastic dual inline
package.

The elements are mounted on one leadframe provid­ing a fixed distance between input and output for high­est safety requirements.

Order Information

Part Remarks

K817P CTR 50 - 600 %, DIP-4

K817P1 CTR 40 - 80 %, DIP-4

K817P2 CTR 63 - 125 %, DIP-4

K817P3 CTR 100 - 200 %, DIP-4

K817P4 CTR 160 - 320 %, DIP-4

K817P5 CTR 50 - 150 %, DIP-4

K817P6 CTR 100 - 300 %, DIP-4

K817P7 CTR 80 - 160 %, DIP-4

K817P8 CTR 130 - 260 %, DIP-4

K817P9 CTR 200 - 400 %, DIP-4

K827PH CTR 50 - 600 %, DIP-8

K847PH CTR 50 - 600 %, DIP-16

Document Number 83522

Rev. 1.7, 26-Oct-04

www.vishay.com

1

K817P/ K827PH/ K847PH

Vishay Semiconductors

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Paramete r Test condition Symbol Val ue Unit

Reverse voltage V

Forward current I

Forward surge current t

≤ 10 µsI

p

Power dissipation P

Junction temperature T

Output

Paramete r Test condition Symbol Val ue Unit

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

/T = 0.5, tp ≤ 10 ms I

p

R

F

FSM

diss

j

CEO

ECO

C

CM

diss

j

6V

60 mA

1.5 A

100 mW

125 °C

70 V

7V

50 mA

100 mA

150 mW

125 °C

Coupler

Paramete r Test condition Symbol Val ue Unit

AC isolation test voltage (RMS) t = 1 min

Total power dissipation P

Operating ambient temperature
range

Storage temperature range T

Soldering temperature 2 mm from case, t ≤ 10 s T

1)

Related to standard climate 23/50 DIN 50014

1)

V

ISO

tot

T

amb

stg

sld

5000 V

RMS

250 mW

- 40 to + 100 °C

- 55 to + 125 °C

260 °C

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Paramete r Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Junction capacitance V

= 50 mA V

F

= 0 V, f = 1 MHz C

R

F

j

1.25 1.6 V

50 pF

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2

Document Number 83522

Rev. 1.7, 26-Oct-04

K817P/ K827PH/ K847PH

Output

Parameter Test condition Symbol Min Ty p . Max Unit

Collector emitter voltage I

Emitter collector voltage I

Collector dark current V

Coupler

Parameter Test condition Symbol Min Ty p . Max Unit

Collector emitter saturation
voltage

Cut-off frequency I

Coupling capacitance f = 1 MHz C

Current Transfer Ratio

Parameter Test condition Part Symbol Min Ty p. Max Unit

I

C/IF

= 100 µAV

C

= 100 µAV

E

= 20 V, IF = 0, E = 0 I

CE

= 10 mA, IC = 1 mA V

I

F

= 10 mA, VCE = 5 V,

F

= 100 Ω

R

L

VCE = 5 V, IF = 5 mA K817P CTR 50 600 %

K827PH CTR 50 600 %

K847PH CTR 50 600 %

= 5 V, IF = 10 mA K817P1 CTR 40 80 %

V

CE

K817P2 CTR 63 125 %

K817P3 CTR 100 200 %

K817P4 CTR 160 320 %

= 5 V, IF = 5 mA K817P5 CTR 50 150 %

V

CE

K817P6 CTR 100 300 %

K817P7 CTR 80 160 %

K817P8 CTR 130 260 %

K817P9 CTR 200 400 %

CEO

ECO

CEO

CEsat

f

c

k

Vishay Semiconductors

70 V

7V

100 nA

0.3 V

100 kHz

0.3 pF

Document Number 83522

Rev. 1.7, 26-Oct-04

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3

K817P/ K827PH/ K847PH

Vishay Semiconductors

Switching Characteristics

Paramete r Test condition Symbol Min Ty p. Max Unit

Delay time V

Rise time V

Fall time V

Storage time V

Turn-on time V

Turn-off time V

Turn-on time V

Turn-off time V

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IC = 2 mA, RL = 100 Ω

S

(see figure 1)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 2)

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 2)

t

d

t

r

t

f

t

s

t

on

t

off

t

on

t

off

3.0 µs

3.0 µs

4.7 µs

0.3 µs

6.0 µs

5.0 µs

9.0 µs

18.0 µs

+ 5 V

IC = 2 mA;

Channel I

Channel II

95 10804

I

0

RG = 50 W
t

p

= 0.01

T

tp = 50 Ps

I

F

F

50 W 100 W

Figure 1. Test circuit, non-saturated operation

1k

Ω

+5V

I

C

Channel I

Channel II

0

RG=50
t

p

= 0.01

T

tp=50 s

I

F

Ω

µ

IF=10mA

Ω

50

adjusted through
input amplitude

Oscilloscope
R

= 1 MW

L

= 20 pF

C

L

Oscilloscope

Ω

M1

R

≥

L

20 pF

C

≤

L

I

F

0

I

C

100%

90%

10%

0

t

d

t

t

p

t

d

t

r

t

(= td+tr) turn-on time

on

on

pulse duration
delay time
rise time

t

p

t

r

t

s

t

off

t

s

t

f

t

(= ts+tf) turn-off time

off

Figure 3. Switching Times

96 11698

t

t

f

t

storage time
fall time

95 10843

Figure 2. Test circuit, saturated operation

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Document Number 83522

Rev. 1.7, 26-Oct-04

K817P/ K827PH/ K847PH

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P –Total Power Dissipation ( mW )

0

0 40 80 120

T

96 11700

– Ambient Temperature( °C )

amb

Figure 4. Total Power Dissipation vs. Ambient Temperature

1000

100

10

10000

VCE=20V

I

=0

1000

F

100

with open Base ( nA )

10

CEO

I - Collector Dark Current,

1

0255075

T

95 11026

- Ambient Temperature ( °C)

amb

100

Figure 7. Collector Dark Current vs. Ambient Temperature

100

VCE=5V

10

1

1

F

I - Forward Current ( mA )

0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

96 11862

VF- Forward Voltage(V)

Figure 5. Forward Current vs. Forward Voltage

2.0

=5V

V

CE

=5mA

I

F

1.5

1.0

0.5

rel

0

CTR – Relative Current Transfer Ratio

–25 0 25 50

T

95 11025

– Ambient Temperature ( °C )

amb

75

Figure 6. Relative Current Transfer Ratio vs. Ambient

Temperature

0.1

C

I – Collector Current ( mA )

0.01

0.1 1 10

95 11027

IF– Forward Current ( mA )

100

Figure 8. Collector Current vs. Forward Current

100

10

1

C

I – Collector Current ( mA)

0.1

0.1 1 10

95 10985

V

CE

IF=50mA

– Collector Emitter Voltage(V)

20mA

10mA

5mA

2mA

1mA

100

Figure 9. Collector Current vs. Collector Emitter Voltage

Document Number 83522

Rev. 1.7, 26-Oct-04

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K817P/ K827PH/ K847PH

Vishay Semiconductors

1.0

20%

0.8

CTR=50%

0.6

0.4

0.2

0

CEsat

110

V – Collector Emitter Saturation Voltage (V )

95 11028

IC– Collector Current ( mA )

10%

100

Figure 10. Collector Emitter Saturation Voltage vs. Collector

Current

1000

VCE=5V

100

10

10

µ

8

t

on

Non Saturated
Operation

=5V

V

S

R

=100 Ω

L

6

t

off

4

2

off

on

t /t –Turnon / Turn off Time ( s )

0

02 4 6

I

95 11030

– Collector Current ( mA )

C

Figure 13. Turn on / off Time vs. Collector Current

10

CTR – Current Transfer Ratio ( % )

1

0.1 1 10

95 11029

IF– Forward Current ( mA )

100

Figure 11. Current Transfer Ratio vs. Forward Current

50

µ

Saturated Operation
V

40

S

R

L

=5V
=1k Ω

30

t

off

20

10

off

on

t /t –Turnon / Turn off Time ( s )

0

0 5 10 15

95 11031

I

F

– Forward Current ( mA )

t

on

20

Figure 12. Turn on / off Time vs. Forward Current

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6

Document Number 83522

Rev. 1.7, 26-Oct-04

Package Dimensions in mm

K817P/ K827PH/ K847PH

Vishay Semiconductors

Package Dimensions in mm

14789

14784

Document Number 83522

Rev. 1.7, 26-Oct-04

www.vishay.com

7

K817P/ K827PH/ K847PH

Vishay Semiconductors

Package Dimensions in mm

14783

www.vishay.com

8

Document Number 83522

Rev. 1.7, 26-Oct-04

K817P/ K827PH/ K847PH

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

Document Number 83522

Rev. 1.7, 26-Oct-04

www.vishay.com

9

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.