VISHAY K814P, K824P, K844P Technical data

K814P/ K824P/ K844P

Vishay Semiconductors

Optocoupler, Phototransistor Output, AC input

Features

• Endstackable to 2.54 mm (0.1") spacing

• DC isolation test voltage V

• Low coupling capacitance of typical 0.3 pF

• Current Transfer Ratio (CTR) of typical 100 %

• Low temperature coefficient of CTR

• Wide ambient temperature range

• Lead-free component

• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC

= 5000 V

ISO

RMS

CE

Agency Approvals

• UL1577, File No. E76222 System Code U, Double
Protection

• C-UL CSA 22.2, Bulletin 5A

Applications

Feature phones, answering machines, PBX, fax
machines

Description

The K814P/ K824P/ K844P consist of a phototransis­tor optically coupled to 2 gallium arsenide infrared
emitting diodes (reverse polarity) in 4-pin (single); 8
pin (dual) or 16-pin (quad) plastic dual inline package.

17220_1

The elements are mounted on one leadframe provid­ing a fixed distance between input and output for high­est safety requirements.

Order Information

K814P CTR > 20 %, Single Channel, DIP-4

K824P CTR > 20 %, Dual Channel, DIP-8

K844P CTR > 20 %, Quad Channel, DIP-16

AC

4PIN

8 PIN

16 PIN

C

Part Remarks

e3

Pb

Pb-free

Absolute Maximum Ratings

T

= 25 °C, unless otherwise specified

amb

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input

Parameter Test condition Symbol Val ue Unit

Forward current I

Forward surge current t

Power dissipation P

Junction temperature T

Document Number 83523

Rev. 1.8, 26-Oct-04

≤ 10 µsI

p

F

FSM

diss

± 60 mA

± 1.5 A

100 mW

j

125 °C

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K814P/ K824P/ K844P

Vishay Semiconductors

Output

Paramete r Test condition Symbol Value Unit

Collector emitter voltage V

Emitter collector voltage V

Collector current I

Collector peak current t

Power dissipation P

Junction temperature T

Coupler

Paramete r Test condition Symbol Value Unit

AC Isolation test voltage (RMS) t = 1 min

Total power dissipation P

Operating ambient temperature
range

Storage temperature range T

Soldering temperature 2 mm from case, t ≤ 10 s T

1)

Related to standard climate 23/50 DIN 50014

/T = 0.5, tp ≤ 10 ms I

p

V

ISO

T

CEO

ECO

C

CM

diss

tot

amb

stg

sld

70 V

7V

50 mA

100 mA

150 mW

j

1)

125 °C

5000 V

RMS

250 mW

- 40 to + 100 °C

- 55 to + 125 °C

260 °C

Electrical Characteristics

T

= 25 °C, unless otherwise specified

amb

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Paramete r Test condition Symbol Min Ty p. Max Unit

Forward voltage I

Reverse current V

= ± 50 mA V

F

= ± 6 V I

R

F

R

1.25 1.6 V

10 µA

Output

Paramete r Test condition Symbol Min Ty p. Max Unit

Collector emitter voltage I

Emitter collector voltage I

Collector dark current V

= 100 µAV

C

= 100 µAV

E

= 20 V, IF = 0, E = 0 I

CE

CEO

ECO

CEO

70 V

7V

100 nA

Coupler

Paramete r Test condition Symbol Min Ty p. Max Unit

Collector emitter saturation

= ± 10 mA, IC = 1 mA V

I

F

voltage

Cut-off frequency I

= ± 10 mA, VCE = 5 V,

F

= 100 Ω

R

L

Coupling capacitance f = 1 MHz C

CEsat

f

c

k

100 kHz

0.3 pF

0.3 V

Current Transfer Ratio

Paramete r Test condition Par t Symbol Min Ty p. Max Unit

I

C/IF

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2

VCE = 5 V, IF = ± 5 mA K814P CTR 20 300 %

Document Number 83523

Rev. 1.8, 26-Oct-04

K814P/ K824P/ K844P

Vishay Semiconductors

Switching Characteristics

Para me te r Test condition Symbol Min Ty p. Max Unit

Delay time V

Rise time V

Fall time V

Storage time V

Turn-on time V

Turn-off time V

Turn-on time V

Turn-off time V

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IC = 2 mA, RL = 100 Ω

S

= 5 V, IF = 10 mA, RL = 1 kΩ

S

= 5 V, IF = 10 mA, RL = 1 kΩ

S

(see figure 1)

(see figure 1)

(see figure 1)

(see figure 1)

(see figure 1)

(see figure 1)

(see figure 2)

(see figure 2)

t

d

t

r

t

f

t

s

t

on

t

off

t

on

t

off

3.0 µs

3.0 µs

4.7 µs

0.3 µs

6.0 µs

5.0 µs

9.0 µs

18.0 µs

I

I

F

0

F

+ 5 V

IC = 2 mA;

RG = 50 W
t

p

= 0.01

T

tp = 50 Ps

Channel I

Channel II

50 W 100 W

13343

Figure 1. Test circuit, non-saturated operation

0

RG = 50 W
t

p

= 0.01

T

tp = 50 Ps

IF= 10 mA

I

F

50 W 1 kW

+ 5 V

I

C

Channel I

Channel II

adjusted through
input amplitude

Oscilloscope
R

> 1 MW

L

< 20 pF

C

L

Oscilloscope
R

> 1 MW

L

< 20 pF

C

L

I

F

0

I

C

100%

90%

10%

0

t

d

t

t

p

t

d

t

r

t

(= td+tr) turn-on time

on

on

pulse duration
delay time
rise time

t

p

t

r

t

s

t

off

t

s

t

f

t

(= ts+tf) turn-off time

off

Figure 3. Switching Times

96 11698

t

t

f

t

storage time
fall time

13344

Figure 2. Test circuit, saturated operation

Document Number 83523

Rev. 1.8, 26-Oct-04

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K814P/ K824P/ K844P

Vishay Semiconductors

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

300

Coupled device

250

200

Phototransistor

150

IR-diode

100

50

tot

P –Total Power Dissipation ( mW)

0

0 40 80 120

T

96 11700

– Ambient Temperature( °C )

amb

Figure 4. Total Power Dissipation vs. Ambient Temperature

1000

100

10

10000

VCE=20V

I

=0

1000

F

100

with open Base ( nA )

10

CEO

I - Collector Dark Current,

1

0255075

T

95 11026

- Ambient Temperature (° C)

amb

100

Figure 7. Collector Dark Current vs. Ambient Temperature

100

VCE=5V

10

1

1

F

I - Forward Current ( mA )

0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

96 11862

VF- Forward Voltage(V)

Figure 5. Forward Current vs. Forward Voltage

2.0

=5V

V

CE

=5mA

I

F

1.5

1.0

0.5

rel

0

CTR – Relative Current Transfer Ratio

–25 0 25 50

T

95 11025

– Ambient Temperature ( °C )

amb

75

Figure 6. Relative Current Transfer Ratio vs. Ambient

Temperature

0.1

C

I – Collector Current ( mA )

0.01

0.1 1 10

95 11027

IF– Forward Current ( mA )

100

Figure 8. Collector Current vs. Forward Current

100

10

1

C

I – Collector Current ( mA)

0.1

0.1 1 10

95 10985

V

CE

IF=50mA

– Collector Emitter Voltage(V)

20mA

10mA

5mA

2mA

1mA

100

Figure 9. Collector Current vs. Collector Emitter Voltage

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Document Number 83523

Rev. 1.8, 26-Oct-04

K814P/ K824P/ K844P

Vishay Semiconductors

1.0

20%

0.8

CTR=50%

0.6

0.4

CEsat

V – Collector Emitter Saturation Voltage (V)

95 11028

0.2

0

110

IC– Collector Current ( mA )

10%

100

Figure 10. Collector Emitter Saturation Voltage vs. Collector

Current

1000

VCE=5V

100

10

10

µ

8

t

on

Non Saturated
Operation

=5V

V

S

R

=100 Ω

L

6

t

off

4

2

off

on

t /t –Turnon / Turn off Time ( s )

0

02 4 6

I

95 11030

– Collector Current ( mA )

C

Figure 13. Turn on / off Time vs. Collector Current

10

CTR – Current Transfer Ratio ( % )

1

0.1 1 10

95 11029

IF– Forward Current ( mA )

100

Figure 11. Current Transfer Ratio vs. Forward Current

50

µ

Saturated Operation
V

40

S

R

L

=5V
=1k Ω

30

t

off

20

10

off

on

t /t –Turnon / Turn off Time ( s )

95 11031

0

0 5 10 15

I

– Forward Current ( mA )

F

t

on

20

Figure 12. Turn on / off Time vs. Forward Current

Document Number 83523

Rev. 1.8, 26-Oct-04

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K814P/ K824P/ K844P

Vishay Semiconductors

Package Dimensions in mm

Package Dimensions in mm

14789

14783

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6

Document Number 83523

Rev. 1.8, 26-Oct-04

Package Dimensions in mm

K814P/ K824P/ K844P

Vishay Semiconductors

14784

Document Number 83523

Rev. 1.8, 26-Oct-04

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7

K814P/ K824P/ K844P

Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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Document Number 83523

Rev. 1.8, 26-Oct-04

Legal Disclaimer Notice

Vishay

Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
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