Datasheet K3012PG, K3012P, K3011P, K3010PG, K3010P Datasheet (VISHAY)

Optocoupler with Phototriac Output

Description

The K3010P(G) series consists of a phototransistor
optically coupled to a gallium arsenide infrared-emit­ting diode in a 6-lead plastic dual inline package. The
elements are mounted on one leadframe using a
coplanar technique, providing a fixed distance be­tween input and output for highest safety
requirements.

Applications

K3010P(G) Series

Vishay Telefunken

Circuits for safe protective separation against electri­cal shock according to safety class II (reinforced
isolation):

D

For appl. class I – IV at mains voltage ≤ 300 V

D

For appl. class I – III at mains voltage ≤ 600 V
according to VDE 0884, table 2, suitable for:

Monitors, air conditioners, line switches, solid
state relays, microwaves.

VDE Standards

These couplers perform safety functions according
to the following equipment standards:

D

VDE 0884
Optocoupler for electrical safety requirements

D

IEC 950/EN 60950
Office machines (applied for reinforced isolation
for mains voltage ≤ 400 V

D

VDE 0804
Telecommunication apparatus and data
processing

D

IEC 65
Safety for mains-operated electronic and related
household apparatus

RMS

)

14827

~~

6

54

95 10812

2

3

1

A (+) C (–) nc

Note: Pin 5 must not be connected

Order Instruction

Ordering Code CTR Ranking Remarks
K3010P/ K3010PG
K3011P/ K3011PG
K3012P/ K3012PG

1)

G = Leadform 10.16 mm; G is not marked on the body

Document Number 83504

Rev. A4, 13–Sep–99

1)

1)

1)

< 15 mA
< 10 mA

< 5 mA

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K3010P(G) Series

Vishay Telefunken

Features

Approvals:

D

BSI: BS EN 41003, BS EN 60095 (BS 415),
BS EN 60950 (BS 7002),
Certificate number 7081 and 7402

D

FIMKO (SETI): EN 60950,
Certificate number 12398

D

Underwriters Laboratory (UL) 1577 recognized,
file number E-76222

D

VDE 0884, Certificate number 94778

VDE 0884 related features:

D

Rated impulse voltage (transient overvoltage)

= 6 kV peak

V

IOTM

D

Isolation test voltage (partial discharge test
voltage) V

D

Rated isolation voltage (RMS includes DC)
V

IOWM

= 1.6 kV

pd

= 600 V

(848 V peak)

RMS

D

Rated recurring peak voltage (repetitive)

= 600 V

V

IORM

D

Creepage current resistance according to

RMS

VDE 0303/IEC 1 12
Comparative Tracking Index: CTI = 275

D

Thickness through insulation ≥ 0.75 mm

General features:

D

Isolation materials according to UL 94-VO

D

Pollution degree 2 (DIN/VDE 0110 resp. IEC 664)

D

Climatic classification 55/100/21 (IEC 68 part 1)

D

Special construction:
Therefore, extra low coupling capacity of
typical 0.2 pF, high Common Mode Rejection

offered in 3 groups

D

I

FT

D

Coupling System C

Absolute Maximum Ratings

Input (Emitter)

Parameter T est Conditions Symbol Value Unit
Reverse voltage V
Forward current I
Forward surge current tp ≤ 10 ms I
Power dissipation T
Junction temperature T

≤ 25°C P

amb

R

F

FSM

V

5 V

80 mA

3 A

100 mW

j

100

°

C

Output (Detector)

Parameter T est Conditions Symbol Value Unit
Off state output terminal voltage V
On state RMS current I
Peak surge current, non-repetitive tp ≤ 10 ms I
Power dissipation T

≤ 25°C P

amb

TRMS

TMS

Junction temperature T

Coupler

Parameter T est Conditions Symbol V alue Unit
Isolation test voltage (RMS) t = 1 min VIO
Total power dissipation T
Ambient temperature range T
Storage temperature range T
Soldering temperature 2 mm from case, t ≤ 10 s T

1)

Related to standard climate 23/50 DIN 50014

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≤ 25°C P

amb

DRM

V

j

tot

amb

stg

sd

250 V
100 mA

1.5 A
300 mW
100

1)

3.75 kV

°

C

350 mW

–40 to +85

–55 to +100

260

Document Number 83504

Rev. A4, 13–Sep–99

°

C

°

C

°

C

K3010P(G) Series

FT FT

ggg

S L

Vishay Telefunken

Electrical Characteristics (T

amb

= 25°C)

Input (Emitter)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Forward voltage IF = 50 mA V

F

Junction capacitance VR = 0, f = 1 MHz C

Output (Detector)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Forward peak off-state

I

= 100 nA V

DRM

DRM

voltage (repetitive)
Peak on-state voltage ITM = 100 mA V

TM

Critical rate of rise of IFT = 0, IFT = 30 mA (dv/dt)
off-state voltage

1)

Test voltage must be applied within dv/dt ratings

(dv/dt)

Coupler

Parameter Test Conditions Type Symbol Min. Typ. Max. Unit

Emitting diode trigger VS = 3 V, RL = 150 WK3010P(G) I
current

Holding current IF = 10 mA, VS ≥ 3 V I
Note: IFT is defined as a minimum trigger current

K3011P(G) I
K3012P(G) I

j

crq

1.25 1.6 V
50 pF

1)

250 V

1.5 3 V

cr

10 V/ms

0.1 0.2 V/ms

FT
FT
FT

H

8 15 mA
5 10 mA
2 5 mA

100

m

A

Document Number 83504

Rev. A4, 13–Sep–99

R

S

V~

I

FT

R

L

95 10813

Figure 1. Test circuit for dv/dtcr and dv/dt

Test condition:
dv/dt

cr

VS = 2/3 V
(Sine wave)
RL = 33 kΩ
dv/dt
V

eff

(Sine wave)
R

= 2 kΩ

L

crp

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crq

= 30 V

DRM

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K3010P(G) Series

Vishay Telefunken

IF y I

FT

IF = 0

dv / dt

crq

dv/dtcrHighest value of the “rate of rise of off-state voltage” which does not cause any switching from the
dv/dt

off-state to the on-state
Highest value of the “rate of rise of communicating voltage” which does not switch on the device again,

crq

after the voltage has decreased to zero and the trigger current is switched from IFT to zero

Figure 2.

dv / dt

95 10814

cr

+5 V

TTL

270 Ω

Galvanical separation

Figure 3. Motor control circuit

0.1 µF

M

VAC ~

95 10815

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Document Number 83504

Rev. A4, 13–Sep–99

K3010P(G) Series

gg

test

Vishay Telefunken

Maximum Safety Ratings (according to VDE 0884) see figure 4

This device is used for protective separation against electrical shock only within the maximum safety ratings.
This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters Test Conditions Symbol Value Unit

Forward current I

Output (Detector)

Parameters Test Conditions Symbol Value Unit

Power dissipation T

≤ 25°C P

amb

Coupler

Parameters Test Conditions Symbol Value Unit
Rated impulse voltage V
Safety temperature T

si

si

IOTM

si

130 mA

600 mW

6 kV

150

°

C

Insulation Rated Parameters (according to VDE 0884)

Parameter Test Conditions Symbol Min. Typ. Max. Unit

Partial discharge test voltage – 100%, t
Routine test

Partial discharge test voltage –
Lot test (sample test)

tTr = 60 s, t
(see figure 5)

Insulation resistance VIO = 500 V R

VIO = 500 V,
T

amb

VIO = 500 V,
T

amb

(construction test only)

675
600
525
450
375
300
225
150

Isi (mA)

75

0

0 25 50 75 100 125 150

Psi (mW)

T

amb

( °C )95 10925

= 1 s V

test

= 10 s,

test

= 100°C

= 150°C

V

V

IOWM

V

13930

V

IOTM

V

Pd

IORM

pd

IOTM

V

pd

IO

R

IO

R

IO

0

t

1

1.6 kV
6 kV

1.3 kV

12

10

11

10

9

10

t1, t2 = 1 to 10 s
t

, t4 = 1 s

3

t

= 10 s

test

= 12 s

t

stres

t

t3t

test

tTr = 60 s

t

t

stres

2

W
W

W

4

t

Document Number 83504

Rev. A4, 13–Sep–99

Figure 4. Derating diagram

Figure 5. Test pulse diagram for sample test according to

DIN VDE 0884

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K3010P(G) Series

Vishay Telefunken

Typical Characteristics (T

400

Coupled device

300

Phototransistor

200

IR-diode

100

tot

P – Total Power Dissipation ( mW )

0

0 20406080100

T

– Ambient Temperature ( °C )96 11701

amb

Figure 6. Total Power Dissipation vs.

Ambient Temperature

1000.0

100.0

= 25_C, unless otherwise specified)

amb

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

TMrel

0.6

V – Relative On–State Voltage

0.5
–30 –20 –10 0 10 20 30 40 50 60 70 80

T

– Ambient Temperature ( °C )96 11923

amb

Figure 9. Relative On - State vs. Ambient Temperature

100

VDR=100V
I

=0

F

IFw

I

FT

IT=100mA

10.0

1.0

F

I – Forward Current ( mA )

0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )96 11862

Figure 7. Forward Current vs. Forward Voltage

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

FTrel

0.5

I – Relative Threshold Forward Current

–30 –20–10 0 10 20 30 40 50 60 70 80

T

– Ambient Temperature ( °C )96 11922

amb

VS=3V
R

=150

L

W

10

DRM

I – Off–State Current ( nA )

1

20 30 40 50 60 70 80 90 100

T

– Ambient Temperature ( °C )96 11924

amb

Figure 10. Off - State Current vs. Ambient Temperature

250
200
150
100

50

0

–50
–100
–150

TM

I – On–State Current ( mA )

–200
–250

–2.5–2.0–1.5–1.0–0.5 0.0 0.5 1.0 1.5 2.0 2.5

VTM – On–State Voltage ( V )96 11925

IFT=15mA

Figure 8. Relative Threshold Forward Current vs.

Ambient Temperature

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Figure 11. On - State Current vs. Ambient Temperature

Document Number 83504

Rev. A4, 13–Sep–99

Type

XXXXXX

K3010P(G) Series

Vishay Telefunken

Date

Code

(YM)

918 A TK 63

V

DE

Coupling

System

Indicator

Figure 12. Marking example

0884

Company

Logo

Production

Location

Safety

Logo

15090

Dimensions of K301.PG in mm

Document Number 83504

Rev. A4, 13–Sep–99

14771

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K3010P(G) Series

Vishay Telefunken

Dimensions of K301.P in mm

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14770

Document Number 83504

Rev. A4, 13–Sep–99

K3010P(G) Series

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Document Number 83504

Rev. A4, 13–Sep–99

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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