Page 1
Power MOSFET
IRL540, SiHL540
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 100
(Ω)V
R
DS(on)
Q
(Max.) (nC) 64
g
Q
(nC) 9.4
gs
Q
(nC) 27
gd
Configuration Single
TO-220
= 5.0 V 0.077
GS
D
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic-Level Gate Drive
•R
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
G
S
D
G
N-Channel MOSFET
S
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free
SnPb
IRL540PbF
SiHL540-E3
IRL540
SiHL540
Specified at VGS = 4 V and 5 V
DS(on)
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
= 25 °C
T
Continuous Drain Current V
Pulsed Drain Current
a
at 5.0 V
GS
C
= 100 °C 20
C
DS
± 10
GS
I
D
IDM 110
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 5.5 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 841 µH, RG = 25 Ω, IAS = 28 A (see fig. 12c).
DD
c. I
≤ 28 A, dI/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
SD
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91300 www.vishay.com
S09-0058-Rev. A, 02-Feb-09 1
100
28
440 mJ
28 A
15 mJ
150 W
- 55 to + 175
d
10 lbf · in
1.1 N · m
V
AT
°C
Page 2
IRL540, SiHL540
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
DS
GS(th)
V
GSS
DSS
DS(on)
fs
iss
- 560 -
oss
- 140 -
rss
g
--9.4
gs
--27
gd
d(on)
r
-35-
d(off)
-80-
f
D
V
V
GS
V
GS
V
GS
R
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 28 A, dI/dt = 100 A/µs
-62
0.50 -
°C/WCase-to-Sink, Flat, Greasd Surface R
-1.0
VGS = 0 V, ID = 250 µA 100 - - V
VDS = VGS, ID = 250 µA 1.0 - 2.0 V
= ± 10 V - - ± 100 nA
GS
VDS = 100 V, VGS = 0 V - - 25
= 80 V, VGS = 0 V, TJ = 150 °C - - 250
DS
= 5.0 V ID = 17 A
= 4.0 V ID = 14 A
b
b
- - 0.077
- - 0.11
VDS = 50 V, ID = 17 A 12 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
- 2200 -
--64
= 28 A, VDS = 80 V,
I
= 5.0 V
D
see fig. 6 and 13
b
-8.5-
V
= 50 V, ID = 28 A,
DD
= 9.0 Ω, RD = 1.7 Ω, see fig. 10
G
G
G
TJ = 25 °C, IS = 28 A, VGS = 0 V
b
D
S
D
S
b
- 170 -
-4.5-
-7.5-
--28
- - 110
--2.5V
- 200 260 ns
b
- 1.7 2.90 µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
µA
Ω
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91300
2 S09-0058-Rev. A, 02-Feb-09
Page 3
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRL540, SiHL540
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91300 www.vishay.com
S09-0058-Rev. A, 02-Feb-09 3
Page 4
IRL540, SiHL540
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91300
4 S09-0058-Rev. A, 02-Feb-09
Page 5
IRL540, SiHL540
Vishay Siliconix
R
D.U.T.
D
+
-
t
t
d(off)
f
V
DS
V
GS
R
G
5 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
t
d(on)
r
V
DD
to obtain
Var y t
p
required I
Fig. 9 - Maximum Safe Operating Area
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
V
DS
AS
R
G
D.U.T.
I
AS
5 V
t
p
0.01 Ω
Fig. 10b - Switching Time Waveforms
V
DS
t
p
+
V
DD
-
V
DS
I
AS
V
DD
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91300 www.vishay.com
S09-0058-Rev. A, 02-Feb-09 5
Page 6
IRL540, SiHL540
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
Q
V
GS
Q
GS
G
Q
GD
12 V
0.2 µF
50 kΩ
0.3 µF
D.U.T.
V
G
V
GS
3 mA
Charge
I
G
Current sampling resistors
I
D
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
+
V
DS
-
www.vishay.com Document Number: 91300
6 S09-0058-Rev. A, 02-Feb-09
Page 7
IRL540, SiHL540
Peak Diode Recovery dV/dt Test Circuit
Vishay Siliconix
D.U.T.
+
-
R
G
Driver gate drive
P.W.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
controlled by duty factor "D"
SD
• D.U.T. - device under test
Period
-
D =
G
P.W.
Period
+
+
V
DD
-
= 10 V*
V
GS
waveform
SD
Body diode forward
current
waveform
DS
Body diode forward drop
Ripple ≤ 5 %
= 5 V for logic level devices
GS
Diode recovery
dV/dt
dI/dt
V
DD
I
SD
Reverse
recovery
current
Re-applied
voltage
D.U.T. I
D.U.T. V
Inductor current
* V
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91300
.
Document Number: 91300 www.vishay.com
S09-0058-Rev. A, 02-Feb-09 7
Page 8
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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