VISHAY IRL 540 VIS Datasheet

Power MOSFET

IRL540, SiHL540

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 100

(Ω)V

R

DS(on)

Q

(Max.) (nC) 64

g

Q

(nC) 9.4

gs

Q

(nC) 27

gd

Configuration Single

TO-220

= 5.0 V 0.077

GS

D

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Logic-Level Gate Drive

•R

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

G

S

D

G

N-Channel MOSFET

S

designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.

The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.

ORDERING INFORMATION

Package TO-220

Lead (Pb)-free

SnPb

IRL540PbF
SiHL540-E3
IRL540
SiHL540

Specified at VGS = 4 V and 5 V

DS(on)

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V

= 25 °C

T

Continuous Drain Current V

Pulsed Drain Current

a

at 5.0 V

GS

C

= 100 °C 20

C

DS

± 10

GS

I

D

IDM 110
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy
Avalanche Current

a

Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T

b

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 5.5 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 25 V, starting TJ = 25 °C, L = 841 µH, RG = 25 Ω, IAS = 28 A (see fig. 12c).

DD

c. I

≤ 28 A, dI/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91300 www.vishay.com
S09-0058-Rev. A, 02-Feb-09 1

100

28

440 mJ

28 A
15 mJ

150 W

- 55 to + 175

d

10 lbf · in

1.1 N · m

V

AT

°C

IRL540, SiHL540

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

DS(on)

fs

iss

- 560 -

oss

- 140 -

rss

g

--9.4

gs

--27

gd

d(on)

r

-35-

d(off)

-80-

f

D

V

V

GS

V

GS

V

GS

R

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the
integral reverse

p - n junction diode

TJ = 25 °C, IF = 28 A, dI/dt = 100 A/µs

-62

0.50 -

°C/WCase-to-Sink, Flat, Greasd Surface R

-1.0

VGS = 0 V, ID = 250 µA 100 - - V

VDS = VGS, ID = 250 µA 1.0 - 2.0 V

= ± 10 V - - ± 100 nA

GS

VDS = 100 V, VGS = 0 V - - 25

= 80 V, VGS = 0 V, TJ = 150 °C - - 250

DS

= 5.0 V ID = 17 A

= 4.0 V ID = 14 A

b

b

- - 0.077

- - 0.11

VDS = 50 V, ID = 17 A 12 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

- 2200 -

--64

= 28 A, VDS = 80 V,

I

= 5.0 V

D

see fig. 6 and 13

b

-8.5-

V

= 50 V, ID = 28 A,

DD

= 9.0 Ω, RD = 1.7 Ω, see fig. 10

G

G

G

TJ = 25 °C, IS = 28 A, VGS = 0 V

b

D

S

D

S

b

- 170 -

-4.5-

-7.5-

--28

- - 110

--2.5V

- 200 260 ns

b

- 1.7 2.90 µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

µA

Ω

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91300
2 S09-0058-Rev. A, 02-Feb-09

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRL540, SiHL540

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 175 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91300 www.vishay.com
S09-0058-Rev. A, 02-Feb-09 3