Vishay IRFZ20, SiHFZ20 Data Sheet

Power MOSFET

TO-220AB

G

D

S

IRFZ20, SiHFZ20

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 50

R

()V

DS(on)

Q

(Max.) (nC) 17

g

Q

(nC) 9.0

gs

Q

(nC) 3.0

gd

Configuration Single

= 10 V 0.10

GS

G

N-Channel MOSFET

FEATURES

• Extremely Low R

• Compact Plastic Package

•Fast Switching

• Low Drive Current

• Ease of Paralleling

• Excellent Temperature Stability

• Parts Per Million Quality

D

• Compliant to RoHS Directive 2002/95/EC

DS(on)

DESCRIPTION

The technology has expanded its product base to serve the
low voltage, very low R
requirements. Vishay’s highly efficient geometry and
unique processing have been combined to create the lowest
on resistance per device performance. In addition to this
feature all have documented reliability and parts per million

S

quality!
The transistor also offer all of the well established

advantages of MOSFETs such as voltage control, very fast
switching, ease of paralleling, and temperature stability of
the electrical parameters.

They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and in systems that
are operated from low voltage batteries, such as
automotive, portable equipment, etc.

MOSFET transistor

DS(on)

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free

SnPb

IRFZ20PbF
SiHFZ20-E3
IRFZ20
SiHFZ20

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage
Gate-Source Voltage

Continuous Drain Current V

Pulsed Drain Current
Single Pulse Avalanche Energy
Linear Derating Factor (see fig. 16) 0.32 W/°C
Maximum Power Dissipation (see fig. 16) T
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300 (0.063" (1.6 mm) from case

Notes

a. T

= 25 °C to 150 °C

J

b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11).
c. Starting T

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91340 www.vishay.com
S10-1682-Rev. A, 26-Jul-10 1

= 25 °C, L = 0.07 mH, Rg = 25 , IAS = 12 A

J

a

a

= 25 °C

T

at 10 V

GS

b

c

C

= 100 °C 10

C

= 25 °C P

C

V

DS

VGS ± 20

I

D

IDM 60

EAS 5mJ

D

, T

J

stg

50

15

40 W

- 55 to + 150

V

AT

°C

IRFZ20, SiHFZ20

S

D

G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Typical Socket Mount, Junction-to-Ambient R

Case-to-Sink, Mounting Surface Flat, Smooth, and Greased R

Junction-to-Case R

thJA

thCS

thJC

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current I

Drain-Source On-State Resistance

Forward Transconductance

b

b

DS

GS(th)

V

GSS

DSS

V

D(on)

R

VGS = 10 V ID = 10 A - 0.080 0.10 

DS(on)

g

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

- 250 350

oss

- 60 100

rss

g

-9.0-

gs

-3.0-

gd

d(on)

r

-2040

d(off)

-1530

f

D

Modified MOSFET
symbol showing the
internal device

Internal Source Inductance L

S

inductances

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage

b

a

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

V

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction rectifier

TJ = 150 °C, IF = 15 A, dIF/dt = 100 A/μs

Notes

a. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 5).
b. Pulse test: Pulse width  300 μs; duty cycle  2 %.

VGS = 0 V, ID = 250 μA 50 - - V

VDS = VGS, ID = 250 μA 2.0 - 4.0 V

GS

VDS > Max. Rating, VGS = 0 V - - 250

V

= Max. Rating x 0.8, VGS = 0 V,

DS

= 10 V VDS > I

GS

VDS > I

D(on)

T

x R

C

= 125 °C

DS(on)

VGS = 0 V,

V

DS

f = 1.0 MHz, see fig. 11

I

D

V

GS

= 10 V

rating, see fig. 18 for test

essentially independent of

operating temperature)

= 25 V, ID = 9.0 A,

V

DD

Z

= 50 , see fig. 5

0

TC = 25 °C, IS = 15 A, VGS = 0 V - - 1.5 V

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

-80

1.0 -

°C/W

-3.12

= ± 20 V - - ± 500 nA

- - 1000

D(on)

x R

max. - - 15 A

DS(on)

max., ID = 9.0 A 5.0 6.0 - S

- 560 860

= 25 V,

= 20 A, VDS = 0.8 max.

-1217

circuit (Gate charge is

-1530

-4590

b

D

G

S

-3.5-

-4.5-

--15

--60

- 100 - ns

-0.4-μC

μA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 91340
2 S10-1682-Rev. A, 26-Jul-10

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFZ20, SiHFZ20

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Saturation Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91340 www.vishay.com
S10-1682-Rev. A, 26-Jul-10 3

IRFZ20, SiHFZ20

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91340
4 S10-1682-Rev. A, 26-Jul-10

IRFZ20, SiHFZ20

V

DS

90 %

10 %

V

GS

t

d(on)

t

r

t

d(off)

t

f

I

AS

V

DS

V

DD

V

DS

t

p

Vishay Siliconix

R

D.U.T.

D

+

-

V

DS

V

GS

R

G

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V

DD

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration

Fig. 10b - Switching Time Waveforms

Fig. 12a - Clamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91340 www.vishay.com
S10-1682-Rev. A, 26-Jul-10 5

IRFZ20, SiHFZ20

Vishay Siliconix

Fig. 13 - Typical Transconductance vs. Drain Current

Fig. 14 - Breakdown Voltage vs. Temperature

Fig. 15 - Typical On-Resistance vs. Drain Current

www.vishay.com Document Number: 91340
6 S10-1682-Rev. A, 26-Jul-10

Fig. 16 - Power vs. Temperature Derating Curve

Fig. 17 - Gate Charge Test Circuit

P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied
voltage

Reverse
recovery
current

Body diode forward

current

V

GS

= 10 Va

I

SD

Driver gate drive

D.U.T. l

SD

waveform

D.U.T. V

DS

waveform

Inductor current

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dV/dt Test Circuit

V

DD

• dV/dt controlled by R

g

• Driver same type as D.U.T.

•

I

SD

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

R

g

Note

a. V

GS

= 5 V for logic level devices

V

DD

IRFZ20, SiHFZ20

Vishay Siliconix

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91340

Document Number: 91340 www.vishay.com
S10-1682-Rev. A, 26-Jul-10 7

.

www.vishay.com

M

*

3

2

1

L

L(1)

D

H(1)

Q

Ø P

A

F

J(1)

b(1)

e(1)

e

E

b

C

Package Information

Vishay Siliconix

TO-220-1

DIM.

A 4.24 4.65 0.167 0.183

b 0.69 1.02 0.027 0.040

b(1) 1.14 1.78 0.045 0.070

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624

E 9.96 10.52 0.392 0.414

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208

F 1.14 1.40 0.045 0.055

H(1) 6.10 6.71 0.240 0.264

J(1) 2.41 2.92 0.095 0.115

L 13.36 14.40 0.526 0.567

L(1) 3.33 4.04 0.131 0.159

Ø P 3.53 3.94 0.139 0.155

Q 2.54 3.00 0.100 0.118

ECN: X15-0364-Rev. C, 14-Dec-15
DWG: 6031

Note

• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

MILLIMETERS INCHES

MIN. MAX. MIN. MAX.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Revison: 14-Dec-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ASE Xi’an

For technical questions, contact: [e-mail]

Package Picture

1

Document Number: 66542

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Revision: 13-Jun-16

1

Document Number: 91000