Vishay IRFZ20, SiHFZ20 Data Sheet
Power MOSFET
TO-220AB
G
D
S
IRFZ20, SiHFZ20
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 50
R
()V
DS(on)
Q
(Max.) (nC) 17
g
Q
(nC) 9.0
gs
Q
(nC) 3.0
gd
Configuration Single
= 10 V 0.10
GS
G
N-Channel MOSFET
FEATURES
• Extremely Low R
• Compact Plastic Package
•Fast Switching
• Low Drive Current
• Ease of Paralleling
• Excellent Temperature Stability
• Parts Per Million Quality
D
• Compliant to RoHS Directive 2002/95/EC
DS(on)
DESCRIPTION
The technology has expanded its product base to serve the
low voltage, very low R
requirements. Vishay’s highly efficient geometry and
unique processing have been combined to create the lowest
on resistance per device performance. In addition to this
feature all have documented reliability and parts per million
S
quality!
The transistor also offer all of the well established
advantages of MOSFETs such as voltage control, very fast
switching, ease of paralleling, and temperature stability of
the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers, high energy pulse circuits, and in systems that
are operated from low voltage batteries, such as
automotive, portable equipment, etc.
MOSFET transistor
DS(on)
ORDERING INFORMATION
Package TO-220AB
Lead (Pb)-free
SnPb
IRFZ20PbF
SiHFZ20-E3
IRFZ20
SiHFZ20
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current V
Pulsed Drain Current
Single Pulse Avalanche Energy
Linear Derating Factor (see fig. 16) 0.32 W/°C
Maximum Power Dissipation (see fig. 16) T
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature) for 10 s 300 (0.063" (1.6 mm) from case
Notes
a. T
= 25 °C to 150 °C
J
b. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 11).
c. Starting T
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91340 www.vishay.com
S10-1682-Rev. A, 26-Jul-10 1
= 25 °C, L = 0.07 mH, Rg = 25 , IAS = 12 A
J
a
a
= 25 °C
T
at 10 V
GS
b
c
C
= 100 °C 10
C
= 25 °C P
C
V
DS
VGS ± 20
I
D
IDM 60
EAS 5mJ
D
, T
J
stg
50
15
40 W
- 55 to + 150
V
AT
°C
IRFZ20, SiHFZ20
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Typical Socket Mount, Junction-to-Ambient R
Case-to-Sink, Mounting Surface Flat, Smooth, and Greased R
Junction-to-Case R
thJA
thCS
thJC
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current I
Drain-Source On-State Resistance
Forward Transconductance
b
b
DS
GS(th)
V
GSS
DSS
V
D(on)
R
VGS = 10 V ID = 10 A - 0.080 0.10
DS(on)
g
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
- 250 350
oss
- 60 100
rss
g
-9.0-
gs
-3.0-
gd
d(on)
r
-2040
d(off)
-1530
f
D
Modified MOSFET
symbol showing the
internal device
Internal Source Inductance L
S
inductances
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
Body Diode Voltage
b
a
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
V
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction rectifier
TJ = 150 °C, IF = 15 A, dIF/dt = 100 A/μs
Notes
a. Repeditive rating: Pulse width limited by max. junction temperature. See transient temperature impedance curve (see fig. 5).
b. Pulse test: Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 50 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
GS
VDS > Max. Rating, VGS = 0 V - - 250
V
= Max. Rating x 0.8, VGS = 0 V,
DS
= 10 V VDS > I
GS
VDS > I
D(on)
T
x R
C
= 125 °C
DS(on)
VGS = 0 V,
V
DS
f = 1.0 MHz, see fig. 11
I
D
V
GS
= 10 V
rating, see fig. 18 for test
essentially independent of
operating temperature)
= 25 V, ID = 9.0 A,
V
DD
Z
= 50 , see fig. 5
0
TC = 25 °C, IS = 15 A, VGS = 0 V - - 1.5 V
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
-80
1.0 -
°C/W
-3.12
= ± 20 V - - ± 500 nA
- - 1000
D(on)
x R
max. - - 15 A
DS(on)
max., ID = 9.0 A 5.0 6.0 - S
- 560 860
= 25 V,
= 20 A, VDS = 0.8 max.
-1217
circuit (Gate charge is
-1530
-4590
b
D
G
S
-3.5-
-4.5-
--15
--60
- 100 - ns
-0.4-μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
www.vishay.com Document Number: 91340
2 S10-1682-Rev. A, 26-Jul-10
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFZ20, SiHFZ20
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Saturation Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91340 www.vishay.com
S10-1682-Rev. A, 26-Jul-10 3
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