VISHAY IRFU 420 Datasheet

IRFR420, IRFU420, SiHFR420, SiHFU420

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 500

(Ω)V

R

DS(on)

(Max.) (nC) 19

Q

g

(nC) 3.3

Q

gs

(nC) 13

Q

gd

Configuration Single

DPAK

(TO-252)

IPAK

(TO-251)

= 10 V 3.0

GS

G

D

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR420/SiHFR420)

• Straight Lead (IRFU420/SiHFU420)

• Available in Tape and Reel

• Fast Switching

• Ease of Paralleling

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and

S

N-Channel MOSFET

cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.

ORDERING INFORMATION

Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)

Lead (Pb)-free

SnPb

Note

a. See device orientation.

IRFR420PbF IRFR420TRPbF

SiHFR420-E3 SiHFR420T-E3

IRFR420 IRFR420TR

SiHFR420 SiHFR420T

a

IRFR120TRLPbFa IRFU420PbF

a

SiHFR120TL-E3a SiHFU420-E3

a

IRFR120TRLa IRFU420

a

SiHFR120TLa SiHFU420

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 1.5

C

DS

± 20

GS

I

D

IDM 8.0

Linear Derating Factor 0.33

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

e

b

a

a

= 25 °C

e

c

C

TA = 25 °C 2.5

E

AS

I

AR

E

AR

P

D

dV/dt 3.5 V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91275 www.vishay.com
S-Pending-Rev. A, 21-Jul-08

WORK-IN-PROGRESS

500

2.4

0.020

W/°C

400 mJ

2.4 A

4.2 mJ

42

V

AT

W

1

IRFR420, IRFU420, SiHFR420, SiHFU420

Vishay Siliconix

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature) for 10 s 260

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 124 mH, RG = 25 Ω, IAS = 2.4 A (see fig. 12).

DD

c. I

≤ 2.4 A, dI/dt ≤ 50 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

SD

d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Ambient
(PCB Mount)

a

Maximum Junction-to-Case (Drain) R

thJA

R

thJA

thJC

Note

a. When mounted on 1” square PCB (FR-4 or G-10 material).

- 110

-50

-3.0

, T

J

stg

- 55 to + 150

d

°C/W

°C

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.59 - V/°C

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID =1.4 A

DS(on)

fs

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

iss

-92-

oss

-37-

rss

g

--

gs

--

gd

d(on)

r

-33-

d(off)

-16-

f

D

Between lead,
6 mm (0.25") from
package and center of

Internal Source Inductance L

S

die contact

VGS = 0 V, ID = 250 µA 500 - - V

VDS = VGS, ID = 250 µA 2.0 - 4.0 V

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 25

V

= 400 V, VGS = 0 V, TJ = 125 °C - - 250

DS

b

--3.0Ω

VDS = 50 V, ID = 1.4 A 1.5 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

- 360 -

--

= 2.1 A, VDS = 400 V,

I

V

GS

= 10 V

D

see fig. 6 and 13

b

-8.0-

V

= 250 V, ID = 2.1 A,

DD

R

= 18 Ω, RD = 120 Ω, see fig. 10

G

b

D

G

S

-8.6-

-4.5-

-7.5-

19

3.3

13

µA

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

www.vishay.com Document Number: 91275
2 S-Pending-Rev. A, 21-Jul-08

IRFR420, IRFU420, SiHFR420, SiHFU420

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

S

I

SM

SD

rr

rr

on

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 °C, IS = 2.4 A, VGS = 0 V

TJ = 25 °C, IF = 2.1 A, dI/dt = 100 A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

D

G

S

b

--2.4

--8.0

--1.6V

- 260 520 ns

b

- 0.70 1.4 µC

A

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 -Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91275 www.vishay.com
S-Pending-Rev. A, 21-Jul-08 3

IRFR420, IRFU420, SiHFR420, SiHFU420

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91275
4 S-Pending-Rev. A, 21-Jul-08

IRFR420, IRFU420, SiHFR420, SiHFU420

Fig. 9 - Maximum Drain Current vs. Case Temperature

Vishay Siliconix

R

D.U.T.

D

+

-

t

t

d(off)

f

V

DS

V

GS

R

G

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V

DS

90 %

10 %

V

GS

t

t

d(on)

r

Fig. 10b - Switching Time Waveforms

V

DD

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Vary tp to obtain
required I

AS

R

V

L

DS

t

p

G

D.U.T.

I

AS

+

V

DD

-

V

DS

V

DS

V

DD

10 V

t

p

0.01 Ω

I

AS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 91275 www.vishay.com
S-Pending-Rev. A, 21-Jul-08 5

IRFR420, IRFU420, SiHFR420, SiHFU420

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator

Same type as D.U.T.

10 V

V

Q

G

Q

GS

G

Q

GD

12 V

V

GS

0.2 µF

50 kΩ

3 mA

0.3 µF

D.U.T.

+

-

Charge

I

G

Current sampling resistors

I

D

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

V

DS

www.vishay.com Document Number: 91275
6 S-Pending-Rev. A, 21-Jul-08

IRFR420, IRFU420, SiHFR420, SiHFU420

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+

-

R

G

Driver gate drive

P.W.

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

-

• dV/dt controlled by R

• ISD controlled by duty factor "D"

• D.U.T. - device under test

Period

D =

G

P. W .

Period

+

+

V

DD

-

= 10 V*

V

GS

waveform

SD

Body diode forward

current

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices and 3 V drive devices

GS

dI/dt

Diode recovery

dV/dt

V

DD

I

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. I

D.U.T. V

Inductor current

* V

Fig. 14 -For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91275.

Document Number: 91275 www.vishay.com
S-Pending-Rev. A, 21-Jul-08 7

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Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

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document or by any conduct of Vishay.

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Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1