Vishay IRFR9014, IRFU9014, SiHFR9014, SiHFU9014 Data Sheet
www.vishay.com
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) -60
R
()V
DS(on)
Q
max. (nC) 12
g
Q
(nC) 3.8
gs
Q
(nC) 5.1
gd
Configuration Single
= -10 V 0.50
GS
S
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface mount (IRFR9014, SiHFR9014)
• Straight lead (IRFU9014, SiHFU9014)
• Available in tape and reel
•P-channel
• Fast switching
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
DPAK
(TO-252)
D
IPAK
(TO-251)
D
S
G
S
D
G
G
D
P-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251)
Lead (Pb)-free and Halogen-free SiHFR9014-GE3 SiHFR9014TRL-GE3
Lead (Pb)-free IRFR9014PbF IRFR9014TRLPbF
Note
a. See device orientation.
a
SiHFR9014TR-GE3 aSiHFU9014-GE3
a
IRFR9014TRPbF
a
IRFU9014PbF
Available
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 5.0 V
GS
C
= 100 °C -3.2
C
DS
± 20
GS
I
D
IDM -20
Linear Derating Factor 0.20
Linear Derating Factor (PCB mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Maximum Power Dissipation (PCB mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
e
b
a
a
= 25 °C
e
c
d
C
TA = 25 °C 2.5
for 10 s 260
E
AS
I
AR
E
AR
P
D
dV/dt -4.5 V/ns
, T
J
stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 25 V, starting TJ = 25 °C, L = 6.3 mH, Rg = 25 , IAS = - 5.1 A (see fig. 12).
DD
c. I
- 6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0015-Rev. E, 18-Jan-16
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
-60
-5.1
0.020
140 mJ
-5.1 A
2.5 mJ
25
-55 to +150
Document Number: 91277
V
AT
W/°C
W
°C
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Ambient
(PCB mount)
a
Maximum Junction-to-Case (Drain) R
thJA
R
thJA
thJC
- - 110
--50
--5.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = -1 mA - -0.059 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
GSS
DSS
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
oss
rss
g
--3.8
gs
--5.1
gd
d(on)
r
d(off)
-31-
f
D
S
VGS = 0 V, ID = - 250 μA -60 - - V
VDS = VGS, ID = -250 μA -2.0 - -4.0 V
VGS = ± 20 V - - ± 100 nA
VDS = -60 V, VGS = 0 V - - -100
= -48 V, VGS = 0 V, TJ = 125 °C - - -500
V
DS
VGS = -10 V ID = -3.1 A
VDS = -25 V, ID = -3.1 A
b
b
VGS = 0 V,
V
- 170 -
-31-
= - 25 V,
DS
f = 1.0 MHz, see fig. 5
= -6.7 A, VDS = -48 V,
I
V
GS
= - 10 V
D
see fig. 6 and 13
b
= -30 V, ID = -6.7 A,
V
DD
R
= 24 , RD = 4.0 , see fig. 10
-9.6-
g
b
Between lead,
6 mm (0.25") from
package and center of
die contact
c
Vishay Siliconix
°C/W
- - 0.50
1.4 - - S
- 270 -
--12
-11-
-63-
-4.5-
-7.5-
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
MOSFET symbol
showing the
I
SM
SD
rr
rr
on
integral reverse
p - n junction diode
TJ = 25 °C, IS = -5.1 A, VGS = 0 V
b
TJ = 25 °C, IF = -6.7 A, dI/dt = 100 A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
---5.1
---20
---5.5V
- 80 160 ns
b
- 0.096 0.19 μC
A
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S16-0015-Rev. E, 18-Jan-16
2
Document Number: 91277
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 150 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-0015-Rev. E, 18-Jan-16
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91277
www.vishay.com
IRFR9014, IRFU9014, SiHFR9014, SiHFU9014
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
S16-0015-Rev. E, 18-Jan-16
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4
Document Number: 91277
Loading...