IRFR210, IRFU210, SiHFR210, SiHFU210
www.vishay.com |
Vishay Siliconix |
|
|
|
Power MOSFET |
PRODUCT SUMMARY
VDS (V) |
|
200 |
RDS(on) ( ) |
VGS = 10 V |
1.5 |
Qg (Max.) (nC) |
|
8.2 |
Qgs (nC) |
|
1.8 |
Qgd (nC) |
|
4.5 |
Configuration |
|
Single |
|
|
D |
DPAK |
IPAK |
|
(TO-252) |
(TO-251) |
|
D |
D |
|
G |
|
|
S |
D S |
|
G |
|
G
S
N-Channel MOSFET
FEATURES
•Dynamic dV/dt Rating
•Repetitive Avalanche Rated
• Surface Mount (IRFR210, SiHFR210)
• Straight Lead (IRFU210, SiHFU210)
• Available in Tape and Reel
• Fast Switching
•Ease of Paralleling
•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package |
DPAK (TO-252) |
DPAK (TO-252) |
DPAK (TO-252) |
DPAK (TO-252) |
IPAK (TO-251) |
|
|
|
|
|
|
|
|
Lead (Pb)-free and Halogen-free |
SiHFR210-GE3 |
SiHFR210TRL-GE3a |
- |
SiHFR210TRR-GE3a |
SiHFU210-GE3 |
|
Lead (Pb)-free |
IRFR210PbF |
IRFR210TRLPbFa |
IRFR210TRPbFa |
- |
IRFU210PbF |
|
SiHFR210-E3 |
SiHFR210TL-E3a |
SiHFR210T-E3a |
- |
SiHFU210-E3 |
||
|
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER |
|
|
SYMBOL |
LIMIT |
UNIT |
|
|
|
|
|
|
|
|
Drain-Source Voltage |
|
|
VDS |
200 |
V |
|
Gate-Source Voltage |
|
|
VGS |
± 20 |
||
|
|
|
||||
Continuous Drain Current |
|
VGS at 10 V |
TC = 25 °C |
ID |
2.6 |
|
|
TC = 100 °C |
1.7 |
A |
|||
|
|
|
|
|||
Pulsed Drain Currenta |
|
|
|
IDM |
10 |
|
Linear Derating Factor |
|
|
|
0.20 |
W/°C |
|
|
|
|
|
|
|
|
Linear Derating Factor (PCB Mount)e |
|
|
|
0.020 |
||
|
|
|
|
|||
Single Pulse Avalanche Energyb |
|
|
EAS |
95 |
mJ |
|
Avalanche Currenta |
|
|
IAR |
2.7 |
A |
|
Repetitive Avalanche Energya |
|
|
EAR |
2.5 |
mJ |
|
Maximum Power Dissipation |
|
TC = 25 °C |
PD |
25 |
W |
|
Maximum Power Dissipation (PCB Mount)e |
|
TA = 25 °C |
2.5 |
|||
|
|
|
||||
Peak Diode Recovery dV/dtc |
|
|
|
dV/dt |
5.0 |
V/ns |
Operating Junction and Storage Temperature Range |
|
|
TJ, Tstg |
- 55 to + 150 |
°C |
|
Soldering Recommendations (Peak Temperature)d |
|
for 10 s |
|
260 |
||
|
|
|
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = 50 V, starting TJ = 25 °C, L = 28 mH, Rg = 25 , IAS = 2.6 A (see fig. 12).
c.ISD 2.6 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
d.1.6 mm from case.
e.When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0171-Rev. E, 04-Feb-13 |
1 |
Document Number: 91268 |
|
For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR210, IRFU210, SiHFR210, SiHFU210
www.vishay.com |
|
|
|
|
Vishay Siliconix |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
THERMAL RESISTANCE RATINGS |
|
|
|
|
|
|
PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
|
UNIT |
|
|
|
|
|
|
|
Maximum Junction-to-Ambient |
RthJA |
- |
- |
110 |
|
|
Maximum Junction-to-Ambient |
RthJA |
- |
- |
50 |
|
°C/W |
(PCB Mount)a |
|
|||||
Maximum Junction-to-Case (Drain) |
RthJC |
- |
- |
5.0 |
|
|
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
|
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Static |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain-Source Breakdown Voltage |
|
VDS |
VGS = 0 V, ID = 250 μA |
200 |
- |
- |
V |
||||||||
VDS Temperature Coefficient |
|
VDS/TJ |
Reference to 25 °C, ID = 1 mA |
- |
0.30 |
- |
V/°C |
||||||||
Gate-Source Threshold Voltage |
|
VGS(th) |
VDS = VGS, ID = 250 μA |
2.0 |
- |
4.0 |
V |
||||||||
Gate-Source Leakage |
|
IGSS |
|
VGS = ± 20 V |
- |
- |
± 100 |
nA |
|||||||
Zero Gate Voltage Drain Current |
|
IDSS |
VDS = 200 V, VGS = 0 V |
- |
- |
25 |
μA |
||||||||
|
VDS = 160 V, VGS = 0 V, TJ = 125 °C |
- |
- |
250 |
|||||||||||
|
|
|
|
||||||||||||
Drain-Source On-State Resistance |
|
RDS(on) |
VGS = 10 V |
|
|
ID = 1.6 Ab |
- |
- |
1.5 |
|
|||||
Forward Transconductance |
|
gfs |
VDS = 50 V, ID = 1.6 Ab |
0.80 |
- |
- |
S |
||||||||
Dynamic |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Capacitance |
|
Ciss |
|
|
VGS = 0 V, |
- |
140 |
- |
|
||||||
Output Capacitance |
|
Coss |
|
|
VDS = 25 V, |
- |
53 |
- |
pF |
||||||
|
|
|
f = 1.0 MHz, see fig. 5 |
|
|
|
|
||||||||
Reverse Transfer Capacitance |
|
Crss |
- |
15 |
- |
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|||||
Total Gate Charge |
|
Qg |
|
|
ID = 3.3 A, VDS = 160 V, |
- |
- |
8.2 |
|
||||||
Gate-Source Charge |
|
Qgs |
VGS = 10 V |
|
- |
- |
1.8 |
nC |
|||||||
|
|
see fig. 6 and 13b |
|||||||||||||
Gate-Drain Charge |
|
Qgd |
|
|
- |
- |
4.5 |
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|||||
Turn-On Delay Time |
|
td(on) |
|
|
|
|
|
|
|
|
|
- |
8.2 |
- |
|
Rise Time |
|
tr |
VDD = 100 V, ID = 3.3 A, |
- |
17 |
- |
ns |
||||||||
Turn-Off Delay Time |
|
td(off) |
Rg = 24 , RD = 30 , see fig. 10b |
- |
14 |
- |
|||||||||
|
|
||||||||||||||
Fall Time |
|
tf |
|
|
|
|
|
|
|
|
|
- |
8.9 |
- |
|
Internal Drain Inductance |
|
LD |
Between lead, |
|
|
|
|
D |
- |
4.5 |
- |
|
|||
|
6 mm (0.25") from |
|
|
|
|
|
|
|
|||||||
Internal Source Inductance |
|
LS |
package and center of |
G |
|
|
|
|
- |
7.5 |
- |
nH |
|||
|
die contact |
|
|
|
|
|
|
S |
|
||||||
|
|
|
|
|
|
|
|
||||||||
Drain-Source Body Diode Characteristics |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Continuous Source-Drain Diode Current |
|
IS |
MOSFET symbol |
|
|
|
|
|
D |
- |
- |
2.6 |
|
||
|
|
|
showing the |
|
|
|
|
|
|
|
|
|
|
|
A |
Pulsed Diode Forward Currenta |
|
ISM |
integral reverse |
G |
|
|
|
|
- |
- |
10 |
||||
|
|
|
|
|
|
|
|
||||||||
|
p - n junction diode |
|
|
|
|
|
S |
|
|||||||
|
|
|
|
|
|
|
|||||||||
Body Diode Voltage |
|
VSD |
TJ = 25 °C, IS = 2.6 A, VGS = 0 Vb |
- |
- |
2.0 |
V |
||||||||
Body Diode Reverse Recovery Time |
|
trr |
TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μsb |
- |
150 |
310 |
ns |
||||||||
Body Diode Reverse Recovery Charge |
|
Qrr |
- |
0.60 |
1.4 |
μC |
|||||||||
|
|
|
|
|
|
|
|
|
|
||||||
Forward Turn-On Time |
|
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
S13-0171-Rev. E, 04-Feb-13 |
2 |
Document Number: 91268 |
|
For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR210, IRFU210, SiHFR210, SiHFU210
www.vishay.com |
Vishay Siliconix |
|
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C |
Fig. 3 - Typical Transfer Characteristics |
Fig. 2 - Typical Output Characteristics, TC = 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
S13-0171-Rev. E, 04-Feb-13 |
3 |
Document Number: 91268 |
|
For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000