Vishay IRFR010, SiHFR010 Data Sheet

IRFR010, SiHFR010

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)		50
RDS(on) ( )	VGS = 10 V		0.20
Qg (Max.) (nC)		10
Qgs (nC)		2.6
Qgd (nC)		4.8
Configuration		Single
			D

DPAK (TO-252)

G

D

S

G S

N-Channel MOSFET

FEATURES

• Low Drive Current

•Surface Mount

•Fast Switching

•Ease of Paralleling

•Excellent Temperature Stability

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

The power MOSFET technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and diode recovery dV/dt capability.

The power MOSFET transistors also feature all of the well established advantages of MOSFET’S such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The DPAK (TO-252) surface mount package brings the advantages of power MOSFET’s to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9012, SiHFR9012 is provided on 16 mm tape. The straight lead option IRFU9012, SiHFU9012 of the device is called the IPAK (TO-251).

They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, dc-to-dc converters, and a wide range of consumer products.

ORDERING INFORMATION

	Package	DPAK (TO-252)
	Lead (Pb)-free	IRFR010PbF
		SiHFR010-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	50	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	8.2
			TC = 100 °C		5.2	A
Pulsed Drain Currenta				IDM	33
Avalanche Currentb				IAS	1.5
Linear Derating Factor					0.20	W/°C
Maximum Power Dissipation		TC = 25 °C		PD	25	W
Peak Diode Recovery dV/dtc				dV/dt	2.0	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)d		for 10 s			300

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 .

c.ISD 8.2 A, dI/dt 130 A/μs, VDD 40 V, TJ 150 °C.

d.1.6 mm from case.

e.When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0167-Rev. B, 04-Feb-13	1	Document Number: 91420
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR010, SiHFR010

www.vishay.com					Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	MIN.	TYP.	MAX.		UNIT
Maximum Junction-to-Ambient	RthJA	-	-	110
Case-to-Sink	RthCS	-	1.7	-		°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	-	5.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS								MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA								50	-	-	V
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA								2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V							-	-	± 500	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 50 V, VGS = 0 V								-	-	250	μA
			VDS = 40 V, VGS = 0 V, TJ = 125 °C								-	-	1000
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 4.6 Ab					-	0.16	0.20
Forward Transconductance		gfs	VDS 50 V, ID = 3.6 A								2.1	3.1	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,						-	250	-
Output Capacitance		Coss			VDS = 25 V,						-	150	-	pF
			f = 1.0 MHz, see fig. 10
Reverse Transfer Capacitance		Crss									-	29	-
Total Gate Charge		Qg			ID = 7.3 A, VDS = 40 V,						-	6.7	10
Gate-Source Charge		Qgs	VGS = 10 V								-	1.8	2.6	nC
					see fig. 6 and 13b
Gate-Drain Charge		Qgd									-	3.2	4.8
Turn-On Delay Time		td(on)									-	11	17
Rise Time		tr	VDD = 25 V, ID = 7.3 A,								-	33	50	ns
Turn-Off Delay Time		td(off)	Rg = 24 , RD = 3.3 , see fig. 10b								-	12	18
Fall Time		tf									-	23	35
Internal Drain Inductance		LD	Between lead,						D		-	4.5	-
			6 mm (0.25") from
			package and center of			G								nH
Internal Source Inductance		LS	die contactc						S		-	7.5	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol							D	-	-	8.2
			showing the											A
			integral reverse			G
Pulsed Diode Forward Currenta		ISM									-	-	33
			p - n junction diode							S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 8.2 A, VGS = 0 Vb								-	-	1.6	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 7.3 A, dI/dt = 100 A/μsb								41	86	190	ns
Body Diode Reverse Recovery Charge		Qrr									0.15	0.33	0.78	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S13-0167-Rev. B, 04-Feb-13	2	Document Number: 91420
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFR010, SiHFR010

www.vishay.com	Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics	Fig. 4 - Normalized On-Resistance vs. Temperature

S13-0167-Rev. B, 04-Feb-13	3	Document Number: 91420
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000