Vishay IRFR010, SiHFR010 Data Sheet
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IRFR010, SiHFR010
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 50
R
()V
DS(on)
Q
(Max.) (nC) 10
g
Q
(nC) 2.6
gs
Q
(nC) 4.8
gd
Configuration Single
DPAK
(TO-252)
D
S
G
= 10 V 0.20
GS
G
N-Channel MOSFET
FEATURES
• Low Drive Current
• Surface Mount
• Fast Switching
• Ease of Paralleling
• Excellent Temperature Stability
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
D
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
S
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFET’s to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9012, SiHFR9012 is provided on 16 mm tape.
The straight lead option IRFU9012, SiHFU9012 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, dc-to-dc converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package DPAK (TO-252)
Lead (Pb)-free
IRFR010PbF
SiHFR010-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
Avalanche Current
Linear Derating Factor 0.20 W/°C
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 .
DD
8.2 A, dI/dt 130 A/μs, VDD 40 V, TJ 150 °C.
c. I
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0167-Rev. B, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
a
b
c
For technical questions, contact: hvm@vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
at 10 V
GS
d
C
T
= 100 °C 5.2
C
= 25 °C P
C
for 10 s 300
1
DS
± 20
GS
I
D
IDM 33
I
AS
D
dV/dt 2.0 V/ns
, T
J
stg
50
8.2
1.5
25 W
- 55 to + 150
Document Number: 91420
V
A
°C
IRFR010, SiHFR010
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
- - 110
-1.7-
--5.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 4.6 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
- 150 -
oss
-29-
rss
g
-1.82.6
gs
-3.24.8
gd
d(on)
r
-1218
d(off)
-2335
f
D
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 7.3 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 50 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 500 nA
GS
VDS = 50 V, VGS = 0 V - - 250
V
= 40 V, VGS = 0 V, TJ = 125 °C - - 1000
DS
b
VDS 50 V, ID = 3.6 A 2.1 3.1 - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 10
= 7.3 A, VDS = 40 V,
I
= 10 V
V
GS
V
R
= 24 , RD = 3.3 , see fig. 10
g
TJ = 25 °C, IS = 8.2 A, VGS = 0 V
D
see fig. 6 and 13
= 25 V, ID = 7.3 A,
DD
c
b
b
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/WCase-to-Sink R
- 0.16 0.20
- 250 -
-6.710
-1117
-3350
-4.5-
-7.5-
--8.2
--33
--1.6V
41 86 190 ns
0.15 0.33 0.78 μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S13-0167-Rev. B, 04-Feb-13
2
Document Number: 91420
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFR010, SiHFR010
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S13-0167-Rev. B, 04-Feb-13
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91420
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