Vishay IRFPG40, SiHFPG40 Data Sheet

IRFPG40, SiHFPG40

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		1000
RDS(on) (Ω)	VGS = 10 V		3.5
Qg (Max.) (nC)		120
Qgs (nC)		16
Qgd (nC)		65
Configuration		Single

D

TO-247AC

G

S

D

G S

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated	Available

	• Isolated Central Mounting Hole	RoHS*
		COMPLIANT

•Fast Switching

•Ease of Paralleling

•Simple Drive Requirements

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mouting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION
Package				TO-247AC
Lead (Pb)-free				IRFPG40PbF
				SiHFPG40-E3
SnPb				IRFPG40
				SiHFPG40
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER					SYMBOL		LIMIT		UNIT
Drain-Source Voltage						VDS	1000		V
Gate-Source Voltage						VGS	± 20
Continuous Drain Current		VGS at 10 V		TC = 25 °C		ID	4.3
				TC = 100 °C			2.7		A
Pulsed Drain Currenta						IDM	17
Linear Derating Factor							1.2		W/°C
Single Pulse Avalanche Energyb						EAS	490		mJ
Repetitive Avalanche Currenta						IAR	4.3		A
Repetitive Avalanche Energya						EAR	15		mJ
Maximum Power Dissipation		TC = 25 °C				PD	150		W
Peak Diode Recovery dV/dtc						dV/dt	1.0		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 150		°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Mounting Torque		6-32 or M3 screw					10		lbf · in
							1.1		N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 50 mH, Rg = 25		Ω, IAS = 4.3 A (see fig. 12).
c. ISD ≤ 4.3 A, dI/dt ≤ 100 A/μs, VDD ≤ 600, TJ ≤ 150 °C.
d. 1.6 mm from case
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91253								www.vishay.com
S11-0441-Rev. B, 14-Mar-11								1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFPG40, SiHFPG40

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.83

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

1000

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

1.3

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 1000 V, VGS = 0 V

-

-

100

μA

VDS = 800V, VGS = 0 V, TJ = 125 °C

-

-

500

Drain-Source On-State Resistance

R

DS(on)

V = 10 V

I

D

= 2.6 Ab

-

-

3.5

Ω

GS

Forward Transconductance

gfs

VDS = 50 V, ID = 2.6 Ab

33

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

1600

-

Output Capacitance

Coss

pF

VDS = 25 V,

-

170

-

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

56

-

Total Gate Charge

Qg

ID = 4.3 A, VDS = 400 V,

-

-

120

Gate-Source Charge

Qgs

VGS = 10 V

-

-

16

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

65

Turn-On Delay Time

td(on)

-

15

-

Rise Time

tr

VDD = 500 V, ID

= 4.3 A ,

-

33

-

ns

Turn-Off Delay Time

td(off)

Rg = 9.1 Ω, RD = 120

Ω, see fig. 10b

-

100

-

Fall Time

tf

-

30

-

Internal Drain Inductance

LD

Between lead,

D

-

5.0

-

6 mm (0.25") from

package and center of

G

nH

Internal Source Inductance

LS

die contact

S

-

13

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

4.3

showing the

A

Pulsed Diode Forward Currenta

ISM

integral reverse

G

-

-

17

p - n junction diode

S

Body Diode Voltage

VSD

TJ = 25 °C, IS = 4.3 A, VGS = 0 Vb

-

-

1.8

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 4.3 A, dI/dt = 100 A/μsb

-

470

710

ns

Body Diode Reverse Recovery Charge

Qrr

-

1.9

2.9

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91253
2	S11-0441-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFPG40, SiHFPG40

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

				Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91253	www.vishay.com
S11-0441-Rev. B, 14-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000