Vishay IRFPF50, SiHFPF50 Data Sheet

IRFPF50, SiHFPF50

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)

900

RDS(on) (Ω)

VGS = 10 V

1.6

Qg (Max.) (nC)

200

Qgs (nC)

24

Qgd (nC)

110

Configuration

Single

D

TO-247AC

G

S

G

D

S

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

	• Repetitive Avalanche Rated	Available
		RoHS*
	• Isolated Central Mounting Hole
		COMPLIANT

•Fast Switching

•Ease of Paralleling

•Simple Drive Requirements

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

	Package	TO-247AC
	Lead (Pb)-free	IRFPF50PbF
		SiHFPF50-E3
	SnPb	IRFPF50
		SiHFPF50

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	900	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	6.7
			TC = 100 °C		4.2	A
Pulsed Drain Currenta				IDM	27
Linear Derating Factor					1.5	W/°C
Single Pulse Avalanche Energyb				EAS	880	mJ
Repetitive Avalanche Currenta				IAR	6.7	A
Repetitive Avalanche Energya				EAR	19	mJ
Maximum Power Dissipation		TC = 25 °C		PD	190	W
Peak Diode Recovery dV/dtc				dV/dt	1.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s			300d
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω, IAS = 6.7 A (see fig. 12).

c.ISD ≤ 6.7 A, dI/dt ≤ 130 A/μs, VDD ≤ 600, TJ ≤ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91251	www.vishay.com
S11-0441-Rev. B, 14-Mar-11	1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFPF50, SiHFPF50

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.65

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

900

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

1.2

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 900 V, VGS = 0 V

-

-

100

μA

VDS = 720 V, VGS = 0 V, TJ = 125 °C

-

-

500

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 4.0 Ab

-

-

1.6

Ω

Forward Transconductance

gfs

VDS = 100 V, ID = 4.0 Ab

4.9

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

2900

-

Output Capacitance

Coss

pF

VDS = 25 V,

-

270

-

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

92

-

Total Gate Charge

Qg

ID = 6.7 A, VDS = 360 V,

-

-

200

Gate-Source Charge

Qgs

VGS = 10 V

-

-

24

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

110

Turn-On Delay Time

td(on)

-

20

-

Rise Time

tr

VDD = 450 V, ID

= 6.7 A ,

-

34

-

ns

Turn-Off Delay Time

td(off)

RG = 6.2 Ω, RD = 67

Ω, see fig. 10b

-

130

-

Fall Time

tf

-

37

-

Internal Drain Inductance

LD

Between lead,

D

-

5.0

-

6 mm (0.25") from

Internal Source Inductance

LS

package and center of

G

-

13

-

nH

die contact

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

6.7

showing the

A

Pulsed Diode Forward Currenta

ISM

integral reverse

G

-

-

27

p - n junction diode

S

Body Diode Voltage

VSD

TJ = 25 °C, IS = 6.7 A, VGS = 0 Vb

-

-

1.8

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 6.7 A, dI/dt = 100 A/μsb

-

610

920

ns

Body Diode Reverse Recovery Charge

Qrr

-

3.2

4.8

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91251
2	S11-0441-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFPF50, SiHFPF50

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	Fig. 1 - Typical Output Characteristics, TC = 25 °C		Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91251	www.vishay.com
S11-0441-Rev. B, 14-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000