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Document Number: 91240 www.vishay.com
S11-0443-Rev. B, 14-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRFPC40, SiHFPC40
Vishay Siliconix
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
•Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because of its isolated mounting hole. It also
provides greater creepage distance between pins to meet
the requirements of most safety specifications.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 16 mH, R
g
= 25 Ω, I
AS
= 6.8 A (see fig. 12).
c. I
SD
≤ 6.8 A, dI/dt ≤ 80 A/μs, V
DD
≤ V
DS
, T
J
≤ 150 °C.
d. 1.6 mm from case
PRODUCT SUMMARY
V
DS
(V) 600
R
DS(on)
(Ω)V
GS
= 10 V 1.2
Q
g
(Max.) (nC) 60
Q
gs
(nC) 8.3
Q
gd
(nC) 30
Configuration Single
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
IRFPC40PbF
SiHFPC40-E3
SnPb
IRFPC40
SiHFPC40
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
600
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
6.8
AT
C
= 100 °C 4.3
Pulsed Drain Current
a
I
DM
27
Linear Derating Factor 1.2 W/°C
Single Pulse Avalanche Energy
b
E
AS
410 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
150 W
Peak Diode Recovery dV/dt
c
dV/dt 3.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
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www.vishay.com Document Number: 91240
2 S11-0443-Rev. B, 14-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFPC40, SiHFPC40
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-40
°C/WCase-to-Sink, Flat, Greased Surface R
thCS
0.24 -
Maximum Junction-to-Case (Drain) R
thJC
-0.83
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 600 - -
V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.70 -
V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0
V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 600 V, V
GS
= 0 V - - 100
μA
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C - - 500
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 4.1 A
b
--1.2
Ω
Forward Transconductance g
fs
V
DS
= 100 V, I
D
= 4.1 A
b
4.9 - -
S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 1300 -
pFOutput Capacitance C
oss
- 160 -
Reverse Transfer Capacitance C
rss
-30-
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 6.2 A, V
DS
= 360 V,
see fig. 6 and 13
b
--60
nC Gate-Source Charge Q
gs
--8.3
Gate-Drain Charge Q
gd
--30
Turn-On Delay Time t
d(on)
V
DD
= 300 V, I
D
= 6.2 A ,
R
g
= 9.1 Ω, R
D
= 47 Ω, see fig. 10
b
-13-
ns
Rise Time t
r
-18-
Turn-Off Delay Time t
d(off)
-55-
Fall Time t
f
-20-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-5.0-
nH
Internal Source Inductance L
S
-13-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--6.8
A
Pulsed Diode Forward Current
a
I
SM
--27
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 6.8 A, V
GS
= 0 V
b
--1.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 6.2 A, dI/dt = 100 A/μs
b
- 450 940 ns
Body Diode Reverse Recovery Charge Q
rr
-3.87.9μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
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Document Number: 91240 www.vishay.com
S11-0443-Rev. B, 14-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFPC40, SiHFPC40
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature