Vishay IRFP460B, SiHG460B Data Sheet

www.vishay.com

TO-247AC

G

D

S

IRFP460B, SiHG460B

Vishay Siliconix

D Series Power MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max. 550

R

max. at 25 °C ()VGS = 10 V 0.25

DS(on)

Q

max. (nC) 170

g

Q

(nC) 14

gs

Q

(nC) 28

gd

Configuration Single

G

N-Channel MOSFET

FEATURES

•Optimal Design

- Low Area Specific On-Resistance

- Low Input Capacitance (C

iss

)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (UIS)

• Optimal Efficiency and Operation

D

- Low Cost

- Simple Gate Drive Circuitry

- Low Figure-of-Merit (FOM): Ron x Q

g

- Fast Switching

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

S

Exemptions may apply.

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV)

• Server and Telecom Power Supplies

- SMPS

• Industrial

- Welding

- Induction Heating

- Motor Drives

• Battery Chargers

•SMPS

- Power Factor Correction (PFC)

ORDERING INFORMATION

Package TO-247AC
Lead (Pb)-free IRFP460BPbF

Lead (Pb)-free and Halogen-free SiHG460B-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage AC (f > 1 Hz) 30

= 25 °C

T

Continuous Drain Current (T

Pulsed Drain Current
Linear Derating Factor 2.2 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation P
Operating Junction and Storage Temperature Range T
Drain-Source Voltage Slope T
Reverse Diode dV/dt
Soldering Recommendations (Peak Temperature) for 10 s 300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

= 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 7.5 A.

b. V

DD

c. 1.6 mm from case.

 ID, starting TJ = 25 °C.

d. I

SD

S12-0812-Rev. B, 16-Apr-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

= 150 °C) VGS at 10 V

J

a

b

d

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

C

= 100 °C 13

C

= 125 °C

J

1

DS

V

GS

I

D

IDM 62

E

AS

D

, T

J

stg

dV/dt

500

± 20

20

281 mJ
278 W

- 55 to + 150 °C
24

0.36

c

Document Number: 91502

V Gate-Source Voltage

AT

V/ns

°C

S

D

G

IRFP460B, SiHG460B

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain)

thJA

R

thJC

-40

-0.45

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient

DS

Gate-Source Threshold Voltage (N) V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Effective output capacitance, energy

a

related

Effective output capacitance, time

b

related

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Input Resistance R

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current I

Diode Forward Voltage V

Reverse Recovery Time t

Reverse Recovery Charge Q

Reverse Recovery Current I

Notes

a. C
b. C

is a fixed capacitance that gives the same energy as C

oss(er)

is a fixed capacitance that gives the same charging time as C

oss(tr)

DS

V

DS/TJ

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

- 152 -

oss

-13-

rss

C

o(er)

C

o(tr)

g

-28-

gd

d(on)

r

- 117 176

d(off)

- 56 112

f

g

S

MOSFET symbol
showing the
integral reverse

SM

SD

rr

rr

RRM

p - n junction diode

VGS = 0 V, ID = 250 μA 500 - - V

Reference to 25 °C, I

= 250 μA

D

VDS = VGS, ID = 250 μA 2 - 4 V

= ± 20 V - - ± 100 nA

GS

VDS = 500 V, VGS = 0 V - - 1

= 400 V, VGS = 0 V, TJ = 125 °C - - 10

V

DS

= 10 V ID = 10 A - 0.2 0.25 

GS

VDS = 50 V, ID = 10 A - 12 - S

VGS = 0 V,

V

= 100 V,

DS

f = 1 MHz

VGS = 0 V,

V

= 0 V to 400 V

DS

V

= 10 V ID = 10 A, VDS = 400 V

GS

= 400 V, ID = 10 A,

V

DD

V

= 10 V, Rg = 9.1 

GS

f = 1 MHz, open drain - 1.8 - 

TJ = 25 °C, IS = 10 A, VGS = 0 V - - 1.2 V

TJ = 25 °C, IF = IS = 10 A,

dI/dt = 100 A/μs, V

while VDS is rising from 0 % to 80 % VDS.

oss

while VDS is rising from 0 % to 80 % VDS.

oss

= 20 V

R

Vishay Siliconix

°C/W

-0.56-

- 3094 -

- 131 -

- 189 -

- 85 170

-2450

-3162

--20

--80

- 437 - ns

-5.9-μC

-25-A

V/°C

μA

pF

nC Gate-Source Charge Qgs -14-

ns

A

S12-0812-Rev. B, 16-Apr-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91502

11 V

0

20

40

60

80

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

TJ = 25 °C

TOP 15 V

14 V
13 V
12 V
11 V
10 V

9 V
8 V
7 V
6 V

BOTTOM 5 V

11 V

0

10

20

30

40

VDS, Drain-to-Source Voltage (V)

I

D

, Drain-to-Source Current (A)

0 5 10 15 20 25 30

TJ = 150 °C

TOP 15 V

14 V
13 V
12 V
11 V
10 V

9 V
8 V
7 V
6 V

BOTTOM 5 V

TJ, Junction Temperature (°C)

R

DS(on)

, Drain-to-Source

- 60 - 40 - 20020 40 60 80 100 120

140

160

On Resistance (Normalized)

0

0.5

1

1.5

2

2.5

3

VGS = 10 V

ID = 10 A

ġ

ġ

ġ

ġ

ġ

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFP460B, SiHG460B

Vishay Siliconix

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

80

TJ = 25 °C

60

40

TJ = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

10 000

C

10

iss

C

oss

C

rss

V

= 0 V, f = 1 MHz

GS

= Cgs + Cgd, Cds Shorted

C

iss

= C

C

rss

gd

C

= Cds + C

oss

gd

1000

100

Capacitance (pF)

1

0 100 200 300 400 500

VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

24

VDS = 400 V
V

20

DS

V

DS

16

12

= 250 V
= 100 V

S12-0812-Rev. B, 16-Apr-12

20

, Drain-to-Source Current (A)

D

I

0

Fig. 3 - Typical Transfer Characteristics

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

0 5 10 15 20

VGS, Gate-to-Source Voltage (V)

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

25

3

For technical questions, contact: [e-mail]

8

, Gate-to-Source Voltage (V)

4

GS

V

0

0306090

120

150 180

Qg, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Document Number: 91502

www.vishay.com

0.1

1

10

100

VSD, Source-Drain Voltage (V)

I

SD

, Reverse Drain Current (A)

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

ġ

ġ

ġ

VGS = 0 V

TJ = 25 °C

TJ = 150 °C

VDS, Drain-to-Source Voltage (V)

I

D

, Drain Current (A)

0.1

1

10

100

1000

1 10 100 1000

* V

GS

> minimum VGS at which R

DS(on)

is specied

Operation in this area
limited by R

DS(on)

BVDSS Limited

TC = 25 °C
T

J

= 150 °C

Single Pulse

100 μs

1 ms

10 ms

Limited by R

DS(on)

*

TJ, Case Temperature (°C)

I

D

, Drain Current (A)

25 50 75 100 125 150

20

16

12

8

4

0

TJ, Junction Temperature (°C)

V

DS

, Drain-to-Source

- 60 0 160

Brakdown Voltage (V)

- 40 - 20 20 40 60 80 100 120 140

475

500

525

550

575

600

625

0.01

0.1

1

0.0001 0.001 0.01 0.1 1

Normalized Effective Transient

Thermal Impedance

Pulse Time (s)

Duty Cycle = 0.5

0.2

0.1

0.02

0.05

Single Pulse

IRFP460B, SiHG460B

Vishay Siliconix

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10 - Temperature vs. Drain-to-Source Voltage

S12-0812-Rev. B, 16-Apr-12

Fig. 11 - Normalized Thermal Transient Impedance, Junction-to-Case

For technical questions, contact: [e-mail]

4

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 91502

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Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10 V

+

-

V

DS

V

DD

90 %

10 %

t

d(on)

t

r

t

d(off)

t

f

Q

GS

Q

GD

Q

G

V

G

Charge

10 V

IRFP460B, SiHG460B

Vishay Siliconix

Fig. 12 - Switching Time Test Circuit

V

DS

V

GS

Fig. 13 - Switching Time Waveforms

Var y tp to obtain
required I

AS

R

G

10 V

Fig. 16 - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

V

GS

V

L

DS

D.U.T

I

AS

t

p

0.01 Ω

+

V

DD

-

Fig. 17 - Gate Charge Test Circuit

0.3 µF

D.U.T.

3 mA

I

G

Current sampling resistors

I

D

+

V

DS

-

Fig. 14 - Unclamped Inductive Test Circuit

Fig. 15 - Unclamped Inductive Waveforms

S12-0812-Rev. B, 16-Apr-12

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

V

DS

t

p

V

DS

I

AS

V

DD

5

Document Number: 91502

For technical questions, contact: [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

www.vishay.com

IRFP460B, SiHG460B

Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

D.U.T.

+

-

R

g

Driver gate drive

P.W.

+

-

Period

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

• dV/dt controlled by R

• Driver same type as D.U.T.

I

controlled by duty factor “D”

•

SD

• D.U.T. - device under test

-

D =

g

P.W.

Period

+

+

V

DD

-

V

= 10 Va

GS

D.U.T. l

Reverse
recovery
current

D.U.T. V

Re-applied
voltage

Inductor current

Note

a. V

waveform

SD

Body diode forward

waveform

DS

Body diode forward drop

Ripple ≤ 5 %

= 5 V for logic level devices

GS

current

dI/dt

Diode recovery

dV/dt

V

DD

I

SD

Fig. 18 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91502

S12-0812-Rev. B, 16-Apr-12

.

6

Document Number: 91502

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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www.vishay.com

0.10 AC

M M

E

E/2

(2)

(4)

R/2

B

2 x R

S

D

See view B

2 x e

b4

3 x b

2 x b2

L

C

L1

1

2

3

Q

D

A

A2

A

A

A1

C

Ø k BD

M M

A

ØP

(Datum B)

ØP1

D1

4

E1

0.01 BD

M M

View A - A

Thermal pad

D2

DDE E

C

C

View B

(b1, b3, b5)

Base metal

c1

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

4

3

5

7

4

4

4

Lead Assignments

1. Gate

2. Drain

3. Source

4. Drain

Package Information

Vishay Siliconix

TO-247AC (High Voltage)

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051
A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625
A2 1.17 2.49 0.046 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC
b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010
b2 1.53 2.39 0.060 0.094 L 14.20 16.25 0.559 0.640
b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169
b4 2.42 3.43 0.095 0.135 N 7.62 BSC 0.300 BSC
b5 2.59 3.38 0.102 0.133 Ø P 3.51 3.66 0.138 0.144

c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291
c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.82 0.776 0.820 R 4.52 5.49 0.178 0.216
D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC

ECN: X13-0103-Rev. D, 01-Jul-13
DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Contour of slot optional.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions D1 and E1.

5. Lead finish uncontrolled in L1.

6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").

7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.

8. Xian and Mingxin actually photo.

Revision: 01-Jul-13

Document Number: 91360

1

For technical questions, contact: [e-mail]

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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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

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Revision: 13-Jun-16

1

Document Number: 91000