Vishay IRFP460B, SiHG460B Data Sheet

IRFP460B, SiHG460B

www.vishay.com	Vishay Siliconix
	D Series Power MOSFET

PRODUCT SUMMARY

VDS (V) at TJ max.		550
RDS(on) max. at 25 °C ( )	VGS = 10 V		0.25
Qg max. (nC)		170
Qgs (nC)		14
Qgd (nC)		28
Configuration		Single

D

TO-247AC

G

S

D S

G

N-Channel MOSFET

FEATURES

• Optimal Design

- Low Area Specific On-Resistance

- Low Input Capacitance (Ciss)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

-Avalanche Energy Rated (UIS)

•Optimal Efficiency and Operation

-Low Cost

-Simple Gate Drive Circuitry

-Low Figure-of-Merit (FOM): Ron x Qg

-Fast Switching

•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912

Note

*Lead (Pb)-containing terminations are not RoHS-compliant. Exemptions may apply.

APPLICATIONS

•Consumer Electronics

-Displays (LCD or Plasma TV)

•Server and Telecom Power Supplies

-SMPS

•Industrial

-Welding

-Induction Heating

-Motor Drives

•Battery Chargers

•SMPS

-Power Factor Correction (PFC)

ORDERING INFORMATION

Package	TO-247AC
Lead (Pb)-free	IRFP460BPbF
Lead (Pb)-free and Halogen-free	SiHG460B-GE3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500
Gate-Source Voltage				VGS	± 20	V
Gate-Source Voltage AC (f > 1 Hz)					30
Continuous Drain Current (TJ = 150 °C)		VGS at 10 V	TC = 25 °C	ID	20
			TC = 100 °C		13	A
Pulsed Drain Currenta				IDM	62
Linear Derating Factor					2.2	W/°C
Single Pulse Avalanche Energyb				EAS	281	mJ
Maximum Power Dissipation				PD	278	W
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Drain-Source Voltage Slope		TJ = 125 °C		dV/dt	24	V/ns
Reverse Diode dV/dtd					0.36
Soldering Recommendations (Peak Temperature)		for 10 s			300c	°C

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature.

b.VDD = 50 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = 7.5 A.

c.1.6 mm from case.

d.ISD ID, starting TJ = 25 °C.

S12-0812-Rev. B, 16-Apr-12	1	Document Number: 91502
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP460B, SiHG460B

www.vishay.com

THERMAL RESISTANCE RATINGS

Vishay Siliconix

	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	40	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	0.45

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS									MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA									500	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 250 μA									-	0.56	-	V/°C
Gate-Source Threshold Voltage (N)		VGS(th)	VDS = VGS, ID = 250 μA									2	-	4	V
Gate-Source Leakage		IGSS		VGS = ± 20 V								-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 500 V, VGS = 0 V									-	-	1	μA
			VDS = 400 V, VGS = 0 V, TJ = 125 °C									-	-	10
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V	ID = 10 A								-	0.2	0.25
Forward Transconductance		gfs	VDS = 50 V, ID = 10 A									-	12	-	S
Dynamic
Input Capacitance		Ciss		VGS = 0 V,								-	3094	-
Output Capacitance		Coss		VDS = 100 V,								-	152	-
				f = 1 MHz
Reverse Transfer Capacitance		Crss										-	13	-	pF
Effective output capacitance, energy		Co(er)										-	131	-
relateda				VGS = 0 V,
Effective output capacitance, time		Co(tr)	VDS = 0 V to 400 V									-	189	-
relatedb
Total Gate Charge		Qg										-	85	170
Gate-Source Charge		Qgs	VGS = 10 V	ID = 10 A, VDS = 400 V								-	14	-	nC
Gate-Drain Charge		Qgd										-	28	-
Turn-On Delay Time		td(on)										-	24	50
Rise Time		tr	VDD = 400 V, ID = 10 A,									-	31	62	ns
Turn-Off Delay Time		td(off)										-	117	176
			VGS = 10 V, Rg = 9.1
Fall Time		tf										-	56	112
Gate Input Resistance		Rg	f = 1 MHz, open drain									-	1.8	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol								D	-	-	20
			showing the												A
			integral reverse		G
Pulsed Diode Forward Current		ISM										-	-	80
			p - n junction diode								S
Diode Forward Voltage		VSD	TJ = 25 °C, IS = 10 A, VGS = 0 V									-	-	1.2	V
Reverse Recovery Time		trr	TJ = 25 °C, IF = IS = 10 A,									-	437	-	ns
Reverse Recovery Charge		Qrr										-	5.9	-	μC
			dI/dt = 100 A/μs, VR = 20 V
Reverse Recovery Current		IRRM										-	25	-	A

Notes

a.Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS.

b.Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

S12-0812-Rev. B, 16-Apr-12	2	Document Number: 91502
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP460B, SiHG460B

www.vishay.com	Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

<![if ! IE]>

<![endif]>ID, Drain-to-Source Current (A)

80

TOP 15 V
14 V	TJ = 25 °C
13 V
12 V
11 V
11 V

6010 V

9 V

8 V

7 V

6 V

BOTTOM 5 V

40

20

0

0

5

10

15

20

25

30

<![if ! IE]> <![endif]>-to-Source	<![if ! IE]> <![endif]>(Normalized)
<![if ! IE]> <![endif]>Drain	<![if ! IE]> <![endif]>tance
<![if ! IE]> <![endif]>,	<![if ! IE]> <![endif]>Resis
<![if ! IE]> <![endif]>DS(on)
<![if ! IE]> <![endif]>R	<![if ! IE]> <![endif]>On

3

2.5 ID = 10 A

2

1.5

1

VGS = 10 V

0.5

0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160

VDS, Drain-to-Source Voltage (V)	TJ, Junction Temperature (°C)
Fig. 1 - Typical Output Characteristics	Fig. 4 - Normalized On-Resistance vs. Temperature

<![if ! IE]>

<![endif]>ID, Drain-to-Source Current (A)

40								10 000
TOP	15 V
	14 V	TJ = 150 °C
	13 V
	12 V										ġ
	11 V								Ciss
30	11 V							1000		VGS = 0 V, f = 1 MHz
	10 V						<![if ! IE]> <![endif]>(pF)
	8 V									Ciss = Cgs + Cgd, Cds Shorted
	9 V
							<![if ! IE]> <![endif]>Capacitance				ġ
	7 V									Crss = Cgd		ġ
	6 V									Coss = Cds + Cgd
BOTTOM	5 V							100
20									Coss		ġ
10								10	Crss	ġ
0								1
0	5	10	15	20	25	30		0	100	200	300	400	500
VDS, Drain-to-Source Voltage (V)									VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

<![if ! IE]>

<![endif]>ID, Drain-to-Source Current (A)

80						24
					<![if ! IE]> <![endif]>(V)				VDS = 400 V
		TJ	= 25 °C			20			VDS = 250 V
					<![if ! IE]> <![endif]>Voltage
60						16			VDS = 100 V
40		TJ	= 150 °C		<![if ! IE]> <![endif]>ource	12
					<![if ! IE]> <![endif]>-to-S	8
					<![if ! IE]> <![endif]>ate
20
					<![if ! IE]> <![endif]>, G
						4
					<![if ! IE]> <![endif]>GS
					<![if ! IE]> <![endif]>V
0						0				120
0	5	10	15	20	25	0	30	60	90		150	180

VGS, Gate-to-Source Voltage (V)

Qg, Total Gate Charge (nC)

Fig. 3 - Typical Transfer Characteristics		Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S12-0812-Rev. B, 16-Apr-12	3	Document Number: 91502
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000