Vishay IRFP460A, SiHFP460A Data Sheet

IRFP460A, SiHFP460A

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		500
RDS(on) (Ω)	VGS = 10 V		0.27
Qg (Max.) (nC)		105
Qgs (nC)		26
Qgd (nC)		42
Configuration		Single

D

FEATURES

•	Low Gate Charge Qg Results in Simple Drive
	Requirement	Available
•	Improved Gate, Avalanche and Dynamic dV/dt	RoHS*
	Ruggedness	COMPLIANT

•Fully Characterized Capacitance and Avalanche Voltage and Current

•Effective Coss Specified

•Compliant to RoHS Directive 2002/95/EC

TO-247	APPLICATIONS
	• Switch Mode Power Supply (SMPS)
	• Uninterruptable Power Supply
G	• High Speed Power Switching

S					TYPICAL SMPS TOPOLOGIES
					•	Full Bridge
D	S
G					• PFC Boost
	N-Channel MOSFET
ORDERING INFORMATION
Package					TO-247
Lead (Pb)-free					IRFP460APbF
					SiHFP460A-E3
SnPb					IRFP460A
					SiHFP460A
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER							SYMBOL	LIMIT	UNIT
Drain-Source Voltage							VDS	500	V
Gate-Source Voltage							VGS	± 30
Continuous Drain Current			VGS at 10 V	TC = 25 °C			ID	20
				TC = 100 °C				13	A
Pulsed Drain Currenta							IDM	80
Linear Derating Factor								2.2	W/°C
Single Pulse Avalanche Energyb							EAS	960	mJ
Repetitive Avalanche Currenta							IAR	20	A
Repetitive Avalanche Energya							EAR	28	mJ
Maximum Power Dissipation			TC = 25 °C				PD	280	W
Peak Diode Recovery dV/dtc							dV/dt	3.8	V/ns
Operating Junction and Storage Temperature Range							TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)			for 10 s					300d
Mounting Torque			6-32 or M3 screw					10	lbf · in
								1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 4.3 mH, Rg = 25 Ω, IAS = 20 A (see fig. 12).

c.ISD ≤ 20 A, dI/dt ≤ 125 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91234	www.vishay.com
S09-1284-Rev. B, 13-Jul-09	1

IRFP460A, SiHFP460A

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.45

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

500

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.61

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 30 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 500 V, VGS = 0 V

-

-

25

µA

VDS = 400 V, VGS = 0 V, TJ = 125 °C

-

-

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 12 Ab

-

-

0.27

Ω

Forward Transconductance

gfs

VDS = 50 V, ID = 12 Ab

11

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

3100

-

Output Capacitance

Coss

VDS = 25 V,

-

480

-

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

18

-

pF

Output Capacitance

Coss

VDS = 1.0 V, f = 1.0 MHz

4430

VGS = 0 V

VDS = 400 V, f = 1.0 MHz

130

Effective Output Capacitance

Coss eff.

VDS = 0 V to 400 Vc

140

Total Gate Charge

Qg

ID = 20 A, VDS = 400 V,

-

-

105

Gate-Source Charge

Qgs

VGS = 10 V

-

-

26

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

42

Turn-On Delay Time

td(on)

-

18

-

Rise Time

tr

VDD = 250 V, ID = 20 A,

-

55

-

ns

Turn-Off Delay Time

td(off)

RG = 4.3 Ω, RD = 13 Ω, see fig. 10b

-

45

-

Fall Time

tf

-

39

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

20

showing the

A

Pulsed Diode Forward Currenta

ISM

integral reverse

G

-

-

80

p - n junction diode

S

Body Diode Voltage

V

SD

T = 25 °C, I = 20A, V

GS

= 0 Vb

-

-

1.8

V

J

S

Body Diode Reverse Recovery Time

trr

T = 25 °C, I

= 20 A, dI/dt = 100 A/µsb

-

480

710

ns

F

Body Diode Reverse Recovery Charge

Qrr

J

-

5.0

7.5

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

www.vishay.com	Document Number: 91234
2	S09-1284-Rev. B, 13-Jul-09

IRFP460A, SiHFP460A

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

	102	VGS
	Top
<![if ! IE]> <![endif]>(A)		15 V
		10 V
<![if ! IE]> <![endif]>rrent
		8.0 V
		7.0 V
		6.0 V
<![if ! IE]> <![endif]>Cu	10
		5.5 V
<![if ! IE]> <![endif]>rce		5.0 V
	Bottom 4.5 V
<![if ! IE]> <![endif]>-to-Sou
	1		4.5 V
<![if ! IE]> <![endif]>, Drain
<![if ! IE]> <![endif]>D			20 µs Pulse Width
<![if ! IE]> <![endif]>I
	0.1		TC = 25 °C
				102
	0.1	1	10
91234_01		VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	102		VGS
		Top
<![if ! IE]> <![endif]>(A)			15 V
			10 V
<![if ! IE]> <![endif]>rrent
			8.0 V
			7.0 V
			6.0 V
<![if ! IE]> <![endif]>Cu
			5.5 V
<![if ! IE]> <![endif]>urce			5.0 V
	10	Bottom 4.5 V
<![if ! IE]> <![endif]>-to-So				4.5 V
<![if ! IE]> <![endif]>, Drain
<![if ! IE]> <![endif]>D				20 µs Pulse Width
<![if ! IE]> <![endif]>I
	1			TC = 150 °C
			10	102
		1
91234_02			VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

	102
<![if ! IE]> <![endif]>(A)
<![if ! IE]> <![endif]>urrent		150 °C
	10
<![if ! IE]> <![endif]>C			25 °C
<![if ! IE]> <![endif]>-to-Source
	1
<![if ! IE]> <![endif]>, Drain
<![if ! IE]> <![endif]>D				20 µs Pulse Width
<![if ! IE]> <![endif]>I
	0.1			VDS = 50 V
	4.0	5.0	6.0	7.0	8.0	9.0

91234_03

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>Resistance		3.0	ID = 20 A
		2.5	VGS = 10 V
<![if ! IE]> <![endif]>, Drain-to-Source On	<![if ! IE]> <![endif]>(Normalized)	2.0
		1.5
		1.0
		0.5
<![if ! IE]> <![endif]>DS(on)		0.0
<![if ! IE]> <![endif]>R					40 60	80 100 120 140 160
		- 60 - 40 - 20 0		20
91234_04			TJ, Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91234	www.vishay.com
S09-1284-Rev. B, 13-Jul-09	3