Vishay IRFP450A, SiHFP450A Data Sheet
IRFP450A, SiHFP450A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
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500 |
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RDS(on) (Ω) |
VGS = 10 V |
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0.40 |
Qg (Max.) (nC) |
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64 |
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Qgs (nC) |
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16 |
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Qgd (nC) |
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26 |
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Configuration |
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Single |
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D
FEATURES
• |
Low Gate Charge Qg Results in Simple Drive |
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Requirement |
Available |
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Improved Gate, Avalanche and Dynamic dV/dt |
RoHS* |
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Ruggedness |
COMPLIANT |
•Fully Characterized Capacitance and Avalanche Voltage and Current
•Effective Coss Specified
•Lead (Pb)-free Available
TO-247 |
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APPLICATIONS |
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• Switch Mode Power Supply (SMPS) |
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G |
• Uninterruptable Power Supply |
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• High Speed Power Switching |
S |
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TYPICAL SMPS TOPOLOGIES |
D |
S |
• Two Transistor Forward |
G |
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N-Channel MOSFET |
• Half Bridge, Full Bridge |
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• PFC Boost |
ORDERING INFORMATION
Package |
TO-247 |
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Lead (Pb)-free |
IRFP450APbF |
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SiHFP450A-E3 |
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SnPb |
IRFP450A |
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SiHFP450A |
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ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
500 |
V |
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Gate-Source Voltage |
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VGS |
± 30 |
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Continuous Drain Current |
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VGS at 10 V |
TC = 25 °C |
ID |
14 |
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TC = 100 °C |
8.7 |
A |
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Pulsed Drain Currenta |
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IDM |
56 |
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Linear Derating Factor |
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1.5 |
W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
760 |
mJ |
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Repetitive Avalanche Currenta |
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IAR |
14 |
A |
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Repetitive Avalanche Energya |
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EAR |
19 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
190 |
W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
4.1 |
V/ns |
Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
lbf · in |
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1.1 |
N · m |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Starting TJ = 25 °C, L = 7.8 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).
c.ISD ≤ 14 A, dI/dt ≤ 130 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91230 |
www.vishay.com |
S-81271-Rev. A, 16-Jun-08 |
1 |
IRFP450A, SiHFP450A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
- |
40 |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
0.24 |
- |
°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
- |
0.65 |
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0 V, ID = 250 µA |
500 |
- |
- |
V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = 1 mA |
- |
0.58 |
- |
V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 µA |
2.0 |
- |
4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 30 V |
- |
- |
± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 500 V, VGS = 0 V |
- |
- |
25 |
µA |
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VDS = 400 V, VGS = 0 V, TJ = 125 °C |
- |
- |
250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 8.4 Ab |
- |
- |
0.40 |
Ω |
Forward Transconductance |
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gfs |
VDS = 50 V, ID = 8.4 Ab |
7.8 |
- |
- |
S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
- |
2038 |
- |
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Output Capacitance |
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Coss |
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VDS = 25 V, |
- |
307 |
- |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
- |
10 |
- |
pF |
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Output Capacitance |
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Coss |
VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz |
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2859 |
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Output Capacitance |
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Coss |
VGS = 0 V; VDS = 400 V, f = 1.0 MHz |
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81 |
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Effective Output Capacitance |
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Coss eff. |
VGS = 0 V; VDS = 0 V to 400 Vc |
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96 |
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Total Gate Charge |
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Qg |
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ID = 14 A, VDS = 400 V, |
- |
- |
64 |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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- |
- |
16 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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- |
- |
26 |
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Turn-On Delay Time |
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td(on) |
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- |
15 |
- |
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Rise Time |
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tr |
VDD = 250 V, ID = 14 A, |
- |
36 |
- |
ns |
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Turn-Off Delay Time |
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td(off) |
RG = 6.2 Ω, RD = 17 |
Ω, see fig. 10b |
- |
35 |
- |
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Fall Time |
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tf |
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- |
29 |
- |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
D |
- |
- |
14 |
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showing the |
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A |
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integral reverse |
G |
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Pulsed Diode Forward Currenta |
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ISM |
- |
- |
56 |
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p - n junction diode |
S |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 14 A, VGS = 0 Vb |
- |
- |
1.4 |
V |
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Body Diode Reverse Recovery Time |
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trr |
T = 25 °C, I |
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= 14 A, dI/dt = 100 A/µsb |
- |
487 |
731 |
ns |
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F |
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Body Diode Reverse Recovery Charge |
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Qrr |
J |
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- |
3.9 |
5.8 |
µC |
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Forward Turn-On Time |
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ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
www.vishay.com |
Document Number: 91230 |
2 |
S-81271-Rev. A, 16-Jun-08 |
IRFP450A, SiHFP450A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics |
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Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics |
Fig. 4 - Normalized On-Resistance vs. Temperature |
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Document Number: 91230 |
www.vishay.com |
S-81271-Rev. A, 16-Jun-08 |
3 |
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