Vishay IRFP450, SiHFP450 Data Sheet

IRFP450, SiHFP450

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)			500
RDS(on) (Ω)		VGS = 10 V		0.40
Qg (Max.) (nC)			150
Qgs (nC)			20
Qgd (nC)			80
Configuration			Single
							D
TO-247		G
	S
G	D						S

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

•	Repetitive Avalanche Rated	Available
•	Isolated Central Mounting Hole	RoHS*
•	Fast Switching	COMPLIANT
•	Ease of Paralleling
• Simple Drive Requirements
•	Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

	Package	TO-247
	Lead (Pb)-free	IRFP450PbF
		SiHFP450-E3
	SnPb	IRFP450
		SiHFP450

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	500	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	14
			TC = 100 °C		8.7	A
Pulsed Drain Currenta				IDM	56
Linear Derating Factor					1.5	W/°C
Single Pulse Avalanche Energyb				EAS	760	mJ
Repetitive Avalanche Currenta				IAR	8.7	A
Repetitive Avalanche Energya				EAR	19	mJ
Maximum Power Dissipation		TC = 25 °C		PD	190	W
Peak Diode Recovery dV/dtc				dV/dt	3.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s			300d
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 7.0 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).

c.ISD ≤ 14 A, dI/dt ≤ 130 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91233	www.vishay.com
S-81271-Rev. A, 16-Jun-08	1

IRFP450, SiHFP450

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.65

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER		SYMBOL	TEST CONDITIONS					MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 µA					500	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA					-	0.63	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 µA					2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V				-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 500 V, VGS = 0 V					-	-	25	µA
			VDS = 400 V, VGS = 0 V, TJ = 125 °C					-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V				ID = 8.4 Ab	-	-	0.40	Ω
Forward Transconductance		gfs	VDS = 50 V, ID = 8.4 Ab					9.3	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,			-	2600	-
Output Capacitance		Coss									pF
					VDS = 25 V,			-	720	-
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss						-	340	-
Total Gate Charge		Qg				ID = 14 A, VDS = 400 V,		-	-	150
Gate-Source Charge		Qgs	VGS = 10 V					-	-	20	nC
						see fig. 6 and 13b
Gate-Drain Charge		Qgd						-	-	80
Turn-On Delay Time		td(on)						-	17	-
Rise Time		tr	VDD = 250 V, ID = 14 A,					-	47	-	ns
Turn-Off Delay Time		td(off)	RG = 6.2 Ω, RD = 17				Ω, see fig. 10b	-	92	-
Fall Time		tf						-	44	-
Internal Drain Inductance		LD	Between lead,				D	-	5.0	-
			6 mm (0.25") from
											nH
Internal Source Inductance		LS	package and center of				G	-	13	-
			die contact
							S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol				D	-	-	14
			showing the
											A
			integral reverse				G
Pulsed Diode Forward Currenta		ISM						-	-	56
			p - n junction diode				S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 14 A, VGS = 0 Vb					-	-	1.4	V
Body Diode Reverse Recovery Time		trr	T = 25 °C, I		= 14 A, dI/dt = 100 A/µsb			-	540	810	ns
				F
Body Diode Reverse Recovery Charge		Qrr	J					-	4.8	7.2	µC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91233
2	S-81271-Rev. A, 16-Jun-08

IRFP450, SiHFP450

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics, TC = 25 °C		Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91233	www.vishay.com
S-81271-Rev. A, 16-Jun-08	3