VISHAY IRFP 360 Datasheet

Power MOSFET

IRFP360, SiHFP360

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 400

R

(Ω)V

DS(on)

Q

(Max.) (nC) 210

g

Q

(nC) 30

gs

Q

(nC) 110

gd

Configuration Single

TO-247

= 10 V 0.20

GS

D

FEATURES

• Dynamic dV/dt Rated

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,

G

ruggedized device design, low on-resistance and
cost-effectiveness.

S

D

G

N-Channel MOSFET

S

The TO-247 package is preferred for commercial-industrial
applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the
earlier TO-218 package because of its isolated mounting
hole. It also provides greater creepage distance between
pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

Package TO-247

Lead (Pb)-free

SnPb

IRFP360PbF
SiHFP360-E3
IRFP360
SiHFP360

Available

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 14

C

DS

± 20

GS

I

D

IDM 92

Linear Derating Factor 2.2 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

b

a

a

= 25 °C P

c

C

E

AS

I

AR

E

AR

D

dV/dt 4.0 V/ns

, T

J

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V

= 50 V, starting TJ = 25 °C, L = 4.0 mH, RG = 25 Ω, IAS = 23 A (see fig. 12).

DD

c. I

≤ 23 A, dI/dt ≤ 170 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.

SD

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90292 www.vishay.com
S-81377-Rev. A, 30-Jun-08 1

400

23

1200 mJ

23 A

28 mJ

280 W

- 55 to + 150

d

10 lbf · in

1.1 N · m

V

AT

°C

IRFP360, SiHFP360

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.56 -

V

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Internal Drain Inductance L

Internal Source Inductance L

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

DS

GS(th)

V

GSS

DSS

V

DS(on)

fs

iss

- 1100 -

oss

- 490 -

rss

g

--30

gs

- - 110

gd

d(on)

r

- 100 -

d(off)

-67-

f

D

V

V

R

Between lead,
6 mm (0.25") from
package and center of

S

S

I

SM

SD

rr

rr

on

die contact

MOSFET symbol
showing the

integral reverse
p - n junction diode

TJ = 25 °C, IF = 23 A, dI/dt = 100 A/µs

-40

0.24 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.45

VGS = 0 V, ID = 250 µA 400 - -

VDS = VGS, ID = 250 µA 2.0 - 4.0

= ± 20 V - - ± 100

GS

VDS = 400 V, VGS = 0 V - - 25

= 320 V, VGS = 0 V, TJ = 125 °C - - 250

DS

= 10 V ID = 14 A

GS

VDS = 50 V, ID = 14 A

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

b

b

--0.20

14 - -

- 4500 -

- - 210

= 23 A, VDS = 320 V,

I

= 10 V

GS

D

see fig. 6 and 13

b

-18-

V

= 200 V, ID = 23 A ,

DD

= 4.3 Ω, RD = 8.3 Ω, see fig. 10

G

G

G

TJ = 25 °C, IS = 23 A, VGS = 0 V

b

D

S

D

S

b

-79-

-5.0-

-13-

--23

--92

--1.8V

- 420 630 ns

b

-5.68.4µC

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

V

V/°C

V

nA

µA

Ω

S

pFOutput Capacitance C

nC Gate-Source Charge Q

ns

nH

A

www.vishay.com Document Number: 90292
2 S-81377-Rev. A, 30-Jun-08

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

IRFP360, SiHFP360

Vishay Siliconix

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, T

= 150 °C

C

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 90292 www.vishay.com
S-81377-Rev. A, 30-Jun-08 3

IRFP360, SiHFP360

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 90292
4 S-81377-Rev. A, 30-Jun-08

Fig. 9 - Maximum Drain Current vs. Case Temperature

IRFP360, SiHFP360

Vishay Siliconix

R

D.U.T.

D

+

-

t

t

d(off)

f

V

DS

V

GS

R

G

10 V

Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

V

DS

90 %

10 %

V

GS

t

t

d(on)

r

Fig. 10b - Switching Time Waveforms

V

DD

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Vary t

to obtain

p

required I

AS

V

L

DS

t

p

R

G

D.U.T.

I

AS

+

V

DD

-

V

DS

V

DS

V

DD

10 V

t

p

0.01 Ω

I

AS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

Document Number: 90292 www.vishay.com
S-81377-Rev. A, 30-Jun-08 5

IRFP360, SiHFP360

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Q

V

GS

Q

GS

V

G

G

Q

GD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

50 kΩ

0.2 µF

12 V

0.3 µF

D.U.T.

V

GS

3 mA

I

G

Current sampling resistors

I

D

Fig. 13b - Gate Charge Test Circuit

+

V

DS

-

www.vishay.com Document Number: 90292
6 S-81377-Rev. A, 30-Jun-08

IRFP360, SiHFP360

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix

D.U.T.

+

-

R

G

Driver gate drive

P.W.

+

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

-

• dV/dt controlled by R

• Driver same type as D.U.T.

• I

controlled by duty factor "D"

SD

• D.U.T. - device under test

Period

-

D =

G

P.W.

Period

+

+

V

DD

-

= 10 V*

V

GS

waveform

SD

Body diode forward

current

waveform

DS

Ripple ≤ 5 %

= 5 V for logic level devices

GS

Diode recovery

Body diode forward drop

dV/dt

dI/dt

V

DD

I

SD

Reverse
recovery
current

Re-applied
voltage

D.U.T. I

D.U.T. V

Inductor current

* V

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?90292.

Document Number: 90292 www.vishay.com
S-81377-Rev. A, 30-Jun-08 7

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Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1