Vishay IRFP350LC, SiHFP350LC Data Sheet

IRFP350LC, SiHFP350LC

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)			400
RDS(on) (Ω)		VGS = 10 V		0.30
Qg (Max.) (nC)			76
Qgs (nC)			20
Qgd (nC)			37
Configuration			Single

					D
TO-247AC		G
TO-247AC


	S


G	D				S
G					S

N-Channel MOSFET

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement	Available
• Enhanced 30V VGS Rating	RoHS*
• Reduced Ciss, Coss, Crss	COMPLIANT
	COMPLIANT

•Isolated Central Mounting Hole

•Dynamic dV/dt Rated

•Repetitive Avalanche Rated

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. These device improvements combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors for switching applications.

The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

ORDERING INFORMATION
Package		TO-247AC

Lead (Pb)-free		IRFP350LCPbF

		SiHFP350LC-E3
		SiHFP350LC-E3

SnPb		IRFP350LC

		SiHFP350LC
		SiHFP350LC

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER			SYMBOL	LIMIT	UNIT

Drain-Source Voltage			VDS	400	V
Gate-Source Voltage			VGS	± 30	V
Gate-Source Voltage			VGS	± 30
Continuous Drain Current	VGS at 10 V	TC = 25 °C	ID	16
Continuous Drain Current	VGS at 10 V	TC = 100 °C	ID	9.9	A
		TC = 100 °C		9.9	A
Pulsed Drain Currenta			IDM	64
Linear Derating Factor				1.5	W/°C

Single Pulse Avalanche Energyb			EAS	390	mJ
Repetitive Avalanche Currenta			IAR	16	A
Repetitive Avalanche Energya			EAR	19	mJ
Maximum Power Dissipation	TC = 25 °C		PD	190	W
Peak Diode Recovery dV/dtc			dV/dt	4.0	V/ns
Operating Junction and Storage Temperature Range			TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)	for 10 s			300d	°C
Soldering Recommendations (Peak Temperature)	for 10 s			300d
Mounting Torque	6-32 or M3 screw			10	lbf · in

				1.1	N · m
				1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 25 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 Ω, IAS = 16 A (see fig. 12).

c.ISD ≤ 16 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91224	www.vishay.com
S11-0448-Rev. B, 14-Mar-11	1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP350LC, SiHFP350LC

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT

Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.65

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

400

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

0.49

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

4.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 400 V, VGS = 0 V

μA

VDS = 320 V, VGS = 0 V, TJ = 125 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 9.6 Ab

0.30

Forward Transconductance

V = 50 V, I

= 9.6 Ab

8.1

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

2200

Output Capacitance

Coss

VDS = 25 V,

390

Reverse Transfer Capacitance

Crss

f = 1.0 MHz, see fig. 5

Total Gate Charge

ID = 16 A, VDS = 320 V

Gate-Source Charge

Qgs

VGS = 10 V

see fig. 6 and 13b

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

VDD = 200 V, ID = 16 A,

Turn-Off Delay Time

td(off)

Rg = 6.2 Ω, RD = 12 Ω, see fig. 10b

Fall Time

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

Pulsed Diode Forward Currenta

p - n junction diode

Body Diode Voltage

VSD

TJ = 25 °C, IS = 16 A, VGS = 0 Vb

1.6

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 16 A, dI/dt = 100 A/μsb

440

660

Body Diode Reverse Recovery Charge

Qrr

4.1

6.2

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91224
2	S11-0448-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP350LC, SiHFP350LC

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)



Fig. 1 - Typical Output Characteristics, TC = 25 °C			Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 150 °C	Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91224	www.vishay.com
S11-0448-Rev. B, 14-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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