Vishay IRFP32N50K, SiHFP32N50K Data Sheet

IRFP32N50K, SiHFP32N50K

N-Channel MOSFET

TO-247AC

Available

RoHS*

COMPLIANT

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

(Ω)V

DS(on)

(Max.) (nC) 190

(nC) 59

(nC) 84

Configuration Single

= 10 V 0.135

FEATURES

• Low Gate Charge Qg Results in Simple Drive Requirement

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

• Fully Characterized Capacitance and Avalanche Voltage and Current

•Low R

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptible Power Supply

• High Speed Power Switching

• Hard Switching and High Frequency Circuits

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

SnPb

IRFP32N50KPbF SiHFP32N50K-E3 IRFP32N50K SiHFP32N50K

DS(on)

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

at 10 V

= 100 °C 20

± 30

IDM 130

Linear Derating Factor 3.7 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

= 25 °C P

dV/dt 13 V/ns

, T

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature. b. Starting T c. I

= 25 °C, L = 0.87 mH, Rg = 25 Ω, IAS = 32 A.

≤ 32 A, dI/dt ≤ 197 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91221 www.vishay.com S11-0448-Rev. C, 14-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

500

450 mJ

32 A

46 mJ

460 W

- 55 to + 150

10 lbf · in

1.1 N · m

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°C

IRFP32N50K, SiHFP32N50K

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.54 - V/°C

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Body Diode Reverse Recovery Current I

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature. b. Pulse width ≤ 400 μs; duty cycle ≤ 2 %. c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

www.vishay.com Document Number: 91221 2 S11-0448-Rev. C, 14-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

GS(th)

GSS

DSS

VGS = 10 V ID = 32 A

DS(on)

iss

- 550 -

oss

-45-

rss

oss

eff. VDS = 0 V to 400 V

oss

--84

d(on)

-48-

d(off)

-54-

MOSFET symbol showing the integral reverse

RRM

p - n junction diode

TJ = 25 °C, IF = 32 A, dI/dt = 100 A/μs

This datasheet is subject to change without notice.

-40

0.24 -

°C/WCase-to-Sink, Flat, Greased Surface R

-0.26

VGS = 0 V, ID = 250 μA 500 - - V

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

VDS = 500 V, VGS = 0 V - - 50

= 400 V, VGS = 0 V, TJ = 150 °C - - 250

- 0.135 0.16 Ω

VDS = 50 V, ID = 32 A 14 - - S

VGS = 0 V,

= 25 V,

f = 1.0 MHz, see fig. 5

= 1.0 V, f = 1.0 MHz - 5630 -

= 0 V

= 400 V, f = 1.0 MHz - 155 -

- 5280 -

- 265 -

- - 190

= 10 V ID = 32 A, VDS = 400 Vb

-28-

= 250 V, ID = 32 A,

Rg = 4.3 Ω, V

= 10 V

TJ = 25 °C, IS = 32 A, VGS = 0 V

- 120 -

--32

- - 130

--1.5V

- 530 800 ns

- 9.0 13.5 μC

-30-A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

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μA

nC Gate-Source Charge Qgs --59

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VDS, Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

0.1

100

0.01

0.1

1000

VGS 15 V 12 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Top

Bottom

5.0 V

20 μs PULSE WIDTH TJ = 25 °C

100

VGS 15 V 12 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom

Top

5.0 V

20 μs PULSE WIDTH TJ = 150 °C

, Drain-to-Source Current (A)

0.1

100

VDS, Drain-to-Source Voltage (V)

0.1

100

TJ, Junction Temperature

DS(on)

, Drain-to-Source On Resistance (Normalized)

- 60

- 20

- 40

6080100

120

140

160

0.0

0.5

1.0

1.5

2.0

2.5

3.0 ID = 32 A

VGS = 10 V

IRFP32N50K, SiHFP32N50K

Vishay Siliconix

1000

Fig. 1 - Typical Output Characteristics

100

TJ = 150 °C

, Drain-to-Source Current (A)

0.1 5

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

TJ = 25 °C

VDS = 50 V 20 μs PULSE WIDTH

911

Document Number: 91221 www.vishay.com S11-0448-Rev. C, 14-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

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