Vishay IRFP31N50L, SiHFP31N50L Data Sheet

IRFP31N50L, SiHFP31N50L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		500
RDS(on) ( )	VGS = 10 V		0.15
Qg (Max.) (nC)		210
Qgs (nC)		58
Qgd (nC)		100
Configuration		Single

D

TO-247AC

G

S

D

G S

N-Channel MOSFET

FEATURES

• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications	Available
• Lower Gate Charge Results in Simpler Drive	RoHS*
Requirements	COMPLIANT

•Enhanced dV/dt Capabilities Offer Improved Ruggedness

•Higher Gate Voltage Threshold Offers Improved Noise Immunity

•Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•Zero Voltage Switching SMPS

•Telecom and Server Power Supplies

•Uninterruptible Power Supplies

•Motor Control Applications

ORDERING INFORMATION
Package				TO-247AC
Lead (Pb)-free				IRFP31N50LPbF
				SiHFP31N50L-E3
SnPb				IRFP31N50L
				SiHFP31N50L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER					SYMBOL		LIMIT		UNIT
Drain-Source Voltage						VDS	500		V
Gate-Source Voltage						VGS	± 30
Continuous Drain Current		VGS at 10 V	TC = 25 °C			ID	31
			TC = 100 °C				20		A
Pulsed Drain Currenta						IDM	124
Linear Derating Factor							3.7		W/°C
Single Pulse Avalanche Energyb						EAS	460		mJ
Repetitive Avalanche Currenta						IAR	31		A
Repetitive Avalanche Energya						EAR	46		mJ
Maximum Power Dissipation		TC = 25 °C				PD	460		W
Peak Diode Recovery dV/dtc						dV/dt	19		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 150		°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Mounting Torque		6-32 or M3 screw					10		lbf · in
							1.1		N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 1 mH, Rg = 25 , IAS = 31 A (see fig. 12).
c. ISD 31 A, dI/dt 422 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91220								www.vishay.com
S11-0488-Rev. C, 21-Mar-11								1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP31N50L, SiHFP31N50L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.26

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

	PARAMETER	SYMBOL		TEST CONDITIONS						MIN.	TYP.	MAX.	UNIT
	Static
	Drain-Source Breakdown Voltage	VDS		VGS = 0 V, ID = 250 μA						500	-	-	V
	VDS Temperature Coefficient	VDS/TJ	Reference to 25 °C, ID = 1 mA							-	0.28	-	V/°C
	Gate-Source Threshold Voltage	VGS(th)		VDS = VGS, ID = 250 μA						3.0	-	5.0	V
	Gate-Source Leakage	IGSS			VGS = ± 30 V					-	-	± 100	nA
	Zero Gate Voltage Drain Current	IDSS		VDS = 500 V, VGS = 0 V						-	-	50	μA
			VDS = 400 V, VGS = 0 V, TJ = 125 °C							-	-	2.0	mA
	Drain-Source On-State Resistance	RDS(on)	VGS = 10 V				ID = 19 Ab			-	0.15	0.18
	Forward Transconductance	gfs		VDS = 50 V, ID = 19 Ab						15	-	-	S
	Dynamic
	Input Capacitance	Ciss			VGS = 0 V,					-	5000	-
	Output Capacitance	Coss			VDS = 25 V,					-	553	-
	Reverse Transfer Capacitance	Crss		f = 1.0 MHz, see fig. 5						-	59	-
	Output Capacitance	Coss			VDS = 1.0 V , f = 1.0 MHz					-	6630	-	pF
					VDS = 400 V , f = 1.0 MHz					-	155	-
			VGS = 0 V
	Effective Output Capacitance	Coss eff.								-	276	-
							VDS = 0 V to 400 Vc
	Effective Output Capacitance	Coss eff. (ER)								-	200	-
	Total Gate Charge	Qg				ID = 31 A, VDS = 400 V,				-	-	210
	Gate-Source Charge	Qgs	VGS = 10 V							-	-	58	nC
									b
	Gate-Drain Charge	Qgd					see fig. 7 and 13
										-	-	100
	Internal Gate Resistance	Rg		f = 1 MHz, open drain						-	1.1	-
	Turn-On Delay Time	td(on)								-	28	-
	Rise Time	tr		VDD = 250 V, ID = 31 A,						-	115	-	ns
	Turn-Off Delay Time	td(off)		Rg = 4.3 , see fig. 10b						-	54	-
	Fall Time	tf								-	53	-
	Drain-Source Body Diode Characteristics
	Continuous Source-Drain Diode Current	IS	MOSFET symbol						D	-	-	31
			showing the
													A
			integral reverse
	Pulsed Diode Forward Currenta	ISM						G		-	-	124
			p - n junction diode
									S
	Body Diode Voltage	VSD	TJ = 25 °C, IS = 31 A, VGS = 0 Vb							-	-	1.5	V
	Body Diode Reverse Recovery Time	trr		TJ = 25 °C, IF = 31 A						-	170	250	ns
			TJ = 125 °C, dI/dt = 100 A/μsb							-	220	330
			T = 25 °C, I			S	= 31 A, V	GS	= 0 Vb	-	570	860	nC
	Body Diode Reverse Recovery Charge	Qrr	J
			TJ = 125 °C, dI/dt = 100 A/μsb							-	1.2	1.8	μC
	Reverse Recovery Current	IRRM			TJ = 25 °C					-	7.9	12	A
	Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS.

www.vishay.com	Document Number: 91220
2	S11-0488-Rev. C, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP31N50L, SiHFP31N50L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	100	VGS
	Top	15 V
		12 V
		10 V
<![if ! IE]> <![endif]>(A)	100	8.0 V
		7.0 V
<![if ! IE]> <![endif]>Current		6.0 V
	Bottom	5.5 V
		5.0 V
<![if ! IE]> <![endif]>-to-Source	10
<![if ! IE]> <![endif]>, Drain	1
<![if ! IE]> <![endif]>D			5.0 V
<![if ! IE]> <![endif]>I
	0.1
			20 μs PULSE WIDTH
	0.01		TJ = 25 °C
	0.1	1	10	100

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	100	VGS
	Top
		15 V
		12 V
		10 V
		8.0 V
<![if ! IE]> <![endif]>(A)	10	7.0 V
		6.0 V
<![if ! IE]> <![endif]>Current	Bottom	5.5 V
		5.0 V
<![if ! IE]> <![endif]>, Drain-to-Source	1		5.0 V
	0.1
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
			20 μs PULSE WIDTH
	0.01		TJ = 150 °C
	0.1	1	10	100
		VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

	1000
<![if ! IE]> <![endif]>(A)	100
<![if ! IE]> <![endif]>Current		TJ = 150 °C
<![if ! IE]> <![endif]>-to-Source	10
<![if ! IE]> <![endif]>,Drain				TJ = 25 °C
	1
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
					VDS = 50 V
	0.1				20	μs PULSE WIDTH
	4	5	6	7	8	9	10	11
			VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>(Normalized)	3.0
	ID = 31 A
	2.5
<![if ! IE]> <![endif]>Resistance	2.0
<![if ! IE]> <![endif]>-Source On	1.5
	1.0
<![if ! IE]> <![endif]>Drain-to	0.5
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>DS(on)	0.0					VGS = 10 V
<![if ! IE]> <![endif]>R
	- 60 - 40 - 20	0	20	40	60 80	100 120	140 160
		TJ, Junction Temperature

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91220	www.vishay.com
S11-0488-Rev. C, 21-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000