Vishay IRFP31N50L, SiHFP31N50L Data Sheet

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IRFP31N50L, SiHFP31N50L

N-Channel MOSFET

TO-247AC

Available

RoHS*

COMPLIANT

Power MOSFET

Vishay Siliconix

PRODUCT SUMMARY

VDS (V) 500

()V

DS(on)

(Max.) (nC) 210

(nC) 58

(nC) 100

Configuration Single

= 10 V 0.15

FEATURES

• Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications

• Lower Gate Charge Results in Simpler Drive Requirements

• Enhanced dV/dt Capabilities Offer Improved Ruggedness

• Higher Gate Voltage Threshold Offers Improved Noise Immunity

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control Applications

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

SnPb

IRFP31N50LPbF SiHFP31N50L-E3 IRFP31N50L SiHFP31N50L

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

at 10 V

= 100 °C 20

± 30

IDM 124

Linear Derating Factor 3.7 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

= 25 °C P

dV/dt 19 V/ns

, T

stg

Soldering Recommendations (Peak Temperature) for 10 s 300

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting T c. I

= 25 °C, L = 1 mH, Rg = 25 , IAS = 31 A (see fig. 12).

 31 A, dI/dt  422 A/μs, VDD  VDS, TJ  150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91220 www.vishay.com S11-0488-Rev. C, 21-Mar-11 1

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

500

460 mJ

31 A

46 mJ

460 W

- 55 to + 150

10 lbf · in

1.1 N · m

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°C

IRFP31N50L, SiHFP31N50L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R Case-to-Sink, Flat, Greased Surface R Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.28 -

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Output Capacitance C

Effective Output Capacitance C

Effective Output Capacitance

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

Internal Gate Resistance R

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Current I

Forward Turn-On Time t

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

eff. (ER) is a fixed capacitance that stores the same energy as C

oss

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THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

GS(th)

GSS

DSS

VGS = 10 V ID = 19 A

DS(on)

iss

- 553 -

oss

-59-

rss

oss

eff.

oss

oss eff. (ER)

d(on)

-54-

d(off)

-53-

- 200 -

MOSFET symbol showing the integral reverse

RRM

p - n junction diode

This datasheet is subject to change without notice.

-40

0.24 -

°C/W

-0.26

VGS = 0 V, ID = 250 μA 500 - -

VDS = VGS, ID = 250 μA 3.0 -

= ± 30 V - -

VDS = 500 V, VGS = 0 V - -

= 400 V, VGS = 0 V, TJ = 125 °C - -

VDS = 50 V, ID = 19 A

VGS = 0 V,

= 25 V,

f = 1.0 MHz, see fig. 5

= 0 V

= 1.0 V , f = 1.0 MHz - 6630 -

= 400 V , f = 1.0 MHz - 155 -

= 0 V to 400 V

-0.15

15 - -

- 5000 -

- 276 -

5.0 V

± 100 nA

50 μA

2.0 mA

0.18 

- - 210

= 31 A, VDS = 400 V,

= 10 V

see fig. 7 and 13

--58

- - 100

f = 1 MHz, open drain - 1.1 - 

-28-

= 250 V, ID = 31 A,

= 4.3 , see fig. 10

- 115 -

--31

- - 124

TJ = 25 °C, IS = 31 A, VGS = 0 V

--1.5V

TJ = 25 °C, IF = 31 A - 170 250

= 125 °C, dI/dt = 100 A/μs

TJ = 25 °C, IS = 31 A, VGS = 0 V

= 125 °C, dI/dt = 100 A/μs

- 220 330

- 570 860

-1.21.8

TJ = 25 °C - 7.9 12 A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

while VDS is rising from 0 % to 80 % VDS.

oss

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V/°C

μC

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VDS, Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

0.1

100

0.01

0.1

100

VGS 15 V 12 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Top

Bottom

5.0 V

20 μs PULSE WIDTH TJ = 25 °C

VDS, Drain-to-Source Voltage (V)

, Drain-to-Source Current (A)

0.1

100

0.01

0.1

100

VGS 15 V 12 V 10 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Top

Bottom

5.0 V

20 μs PULSE WIDTH TJ = 150 °C

TJ, Junction Temperature

DS(on)

, Drain-to-Source On Resistance (Normalized)

- 60

- 20

- 40

100

120

140

160

0.0

0.5

1.0

1.5

2.0

2.5

3.0 ID = 31 A

VGS = 10 V

Fig. 1 - Typical Output Characteristics

IRFP31N50L, SiHFP31N50L

Vishay Siliconix

1000

100

TJ = 150 °C

TJ = 25 °C

, Drain-to-Source Current (A)

VDS = 50 V

0.1 54

6810

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

20 μs PULSE WIDTH

911

Document Number: 91220 www.vishay.com S11-0488-Rev. C, 21-Mar-11 3

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

This datasheet is subject to change without notice.

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IRFP31N50L, SiHFP31N50L

VDS = 400 V VDS = 250 V VDS = 100 V

120

160

QG, Total Gate Charge (nC)

, Gate-to-Source Voltage (V)

ID = 31 A

Vishay Siliconix

1 000 000

VGS = 0 V, f = 1 MHz C

= Cgs + Cgd, Cds SHORTED

iss

= C

rss

100 000

oss

= Cds + C

10 000

1000

C, Capacitance (pF)

100

VDS, Drain-to-Source Voltage (V)

iss

oss

rss

100

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Energy (µs)

1000

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

1000

100

TJ = 150 °C

TJ = 25 °C

, Reverse Drain Current (A)

VGS = 0 V

1.4

100

VDS, Drain-to-Source Voltage (V)

400

300200

500

Fig. 6 - Output Capacitance Stored Energy vs. V

600

0.1

0.2

0.6

VSD, Source-to-Drain Voltage (V)

1.0

Fig. 8 - Typical Source Drain Diode Forward Voltage

www.vishay.com Document Number: 91220 4 S11-0488-Rev. C, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

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1.8

IRFP31N50L, SiHFP31N50L

TC, Case Temperature (°C)

, Drain Current (A)

100

125

150

90 %

10 %

d(on)

d(off)

0.001

0.01

0.1

0.001 0.01 0.1 1

t 1, Rectangular Pulse Duration (sec)

Thermal Response (Z

thJC

)

0.00001

0.0001

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t1/ t

2. Peak TJ = PDM x Z

thJC

+ T

0.01

D.U.T

Driver

15 V

20 V

Vishay Siliconix

D.U.T.

10 V

Pulse width ≤ 1 µs Duty factor ≤ 0.1 %

Fig. 10a - Switching Time Test Circuit

Fig. 9 - Maximum Drain Current vs. Case Temperature

Fig. 10b - Switching Time Waveforms

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91220 www.vishay.com S11-0488-Rev. C, 21-Mar-11 5

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

Fig. 12a - Unclamped Inductive Test Circuit

Fig. 12b - Unclamped Inductive Waveforms

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IRFP31N50L, SiHFP31N50L

OPERATION IN THIS AREA LIMITED

BY RDS(on)

VDS, Drain-to-Source Voltage (V)

, Drain Current (A)

10us

100us

1ms

10ms

TC = 25 °C T

= 150 °C

Single Pulse

1000

100

1000

D.U.T.

3 mA

0.3 µF

0.2 µF

50 kΩ

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

Vishay Siliconix

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

1000

ID TOP 14A 20A

800

600

400

200

BOTTOM 30A

, Single Pulse Avalanche Energy (mJ)

25 50 75 100 125 150

Starting TJ, Junction Temperature(°C)

Fig. 12d - Gate Charge Test Circuit

www.vishay.com Document Number: 91220 6 S11-0488-Rev. C, 21-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

Charge

Fig. 13a - Maximum Safe Operating Area Fig. 13b - Basic Gate Charge Waveform

This datasheet is subject to change without notice.

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P.W.

Period

dI/dt

Diode recovery

dV/dt

Ripple ≤ 5 %

Body diode forward drop

Re-applied voltage

Reverse recovery current

Body diode forward

current

= 10 Va

Driver gate drive

D.U.T. l

waveform

D.U.T. V

waveform

Inductor current

D =

P.W.

Period

Peak Diode Recovery dV/dt Test Circuit

• dV/dt controlled by R

• Driver same type as D.U.T.

•

controlled by duty factor “D”

• D.U.T. - device under test

D.U.T.

Circuit layout considerations

• Low stray inductance

• Ground plane

• Low leakage inductance

current transformer

Note

a. V

= 5 V for logic level devices

IRFP31N50L, SiHFP31N50L

Vishay Siliconix

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?91220

Document Number: 91220 www.vishay.com S11-0488-Rev. C, 21-Mar-11 7

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

This datasheet is subject to change without notice.

Fig. 14 - For N-Channel

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0.10 AC

M M

E/2

(2)

(4)

R/2

2 x R

See view B

2 x e

3 x b

2 x b2

Ø k BD

M M

ØP

(Datum B)

ØP1

0.01 BD

M M

View A - A

Thermal pad

DDE E

View B

(b1, b3, b5)

Base metal

(b, b2, b4)

Section C - C, D - D, E - E

(c)

Planting

Lead Assignments

1. Gate

2. Drain

3. Source

4. Drain

Package Information

Vishay Siliconix

TO-247AC (High Voltage)

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.

A 4.58 5.31 0.180 0.209 D2 0.51 1.30 0.020 0.051 A1 2.21 2.59 0.087 0.102 E 15.29 15.87 0.602 0.625 A2 1.17 2.49 0.046 0.098 E1 13.72 - 0.540 -

b 0.99 1.40 0.039 0.055 e 5.46 BSC 0.215 BSC b1 0.99 1.35 0.039 0.053 Ø k 0.254 0.010 b2 1.53 2.39 0.060 0.094 L 14.20 16.25 0.559 0.640 b3 1.65 2.37 0.065 0.093 L1 3.71 4.29 0.146 0.169 b4 2.42 3.43 0.095 0.135 N 7.62 BSC 0.300 BSC b5 2.59 3.38 0.102 0.133 Ø P 3.51 3.66 0.138 0.144

c 0.38 0.86 0.015 0.034 Ø P1 - 7.39 - 0.291 c1 0.38 0.76 0.015 0.030 Q 5.31 5.69 0.209 0.224

D 19.71 20.82 0.776 0.820 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - S 5.51 BSC 0.217 BSC

ECN: X13-0103-Rev. D, 01-Jul-13 DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994.

2. Contour of slot optional.

3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body.

4. Thermal pad contour optional with dimensions D1 and E1.

5. Lead finish uncontrolled in L1.

6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").

7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.

8. Xian and Mingxin actually photo.

Revision: 01-Jul-13

Document Number: 91360

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000

Vishay IRFP31N50L, SiHFP31N50L Data Sheet

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