IRFP31N50L, SiHFP31N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
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500 |
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RDS(on) ( ) |
VGS = 10 V |
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0.15 |
Qg (Max.) (nC) |
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210 |
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Qgs (nC) |
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58 |
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Qgd (nC) |
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100 |
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Configuration |
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Single |
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D
TO-247AC
G
S
D
G S
N-Channel MOSFET
FEATURES
• Super Fast Body Diode Eliminates the Need for |
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External Diodes in ZVS Applications |
Available |
• Lower Gate Charge Results in Simpler Drive |
RoHS* |
Requirements |
COMPLIANT |
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•Enhanced dV/dt Capabilities Offer Improved Ruggedness
•Higher Gate Voltage Threshold Offers Improved Noise Immunity
•Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•Zero Voltage Switching SMPS
•Telecom and Server Power Supplies
•Uninterruptible Power Supplies
•Motor Control Applications
ORDERING INFORMATION |
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Package |
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TO-247AC |
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Lead (Pb)-free |
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IRFP31N50LPbF |
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SiHFP31N50L-E3 |
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SnPb |
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IRFP31N50L |
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SiHFP31N50L |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
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PARAMETER |
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SYMBOL |
LIMIT |
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UNIT |
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Drain-Source Voltage |
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VDS |
500 |
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V |
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Gate-Source Voltage |
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VGS |
± 30 |
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Continuous Drain Current |
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VGS at 10 V |
TC = 25 °C |
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ID |
31 |
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TC = 100 °C |
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20 |
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A |
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Pulsed Drain Currenta |
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IDM |
124 |
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Linear Derating Factor |
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3.7 |
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W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
460 |
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mJ |
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Repetitive Avalanche Currenta |
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IAR |
31 |
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A |
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Repetitive Avalanche Energya |
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EAR |
46 |
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mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
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PD |
460 |
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Peak Diode Recovery dV/dtc |
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dV/dt |
19 |
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V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
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°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
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lbf · in |
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1.1 |
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N · m |
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Notes |
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a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). |
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b. Starting TJ = 25 °C, L = 1 mH, Rg = 25 , IAS = 31 A (see fig. 12). |
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c. ISD 31 A, dI/dt 422 A/μs, VDD VDS, TJ 150 °C. |
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d. 1.6 mm from case. |
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* Pb containing terminations are not RoHS compliant, exemptions may apply |
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Document Number: 91220 |
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www.vishay.com |
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S11-0488-Rev. C, 21-Mar-11 |
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1 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
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Maximum Junction-to-Ambient |
RthJA |
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40 |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
0.24 |
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°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
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0.26 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
SYMBOL |
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TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
VDS |
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VGS = 0 V, ID = 250 μA |
500 |
- |
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V |
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VDS Temperature Coefficient |
VDS/TJ |
Reference to 25 °C, ID = 1 mA |
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0.28 |
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V/°C |
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Gate-Source Threshold Voltage |
VGS(th) |
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VDS = VGS, ID = 250 μA |
3.0 |
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5.0 |
V |
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Gate-Source Leakage |
IGSS |
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VGS = ± 30 V |
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- |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
IDSS |
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VDS = 500 V, VGS = 0 V |
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50 |
μA |
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VDS = 400 V, VGS = 0 V, TJ = 125 °C |
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2.0 |
mA |
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Drain-Source On-State Resistance |
RDS(on) |
VGS = 10 V |
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ID = 19 Ab |
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0.15 |
0.18 |
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Forward Transconductance |
gfs |
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VDS = 50 V, ID = 19 Ab |
15 |
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S |
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Dynamic |
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Input Capacitance |
Ciss |
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VGS = 0 V, |
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5000 |
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Output Capacitance |
Coss |
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VDS = 25 V, |
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553 |
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Reverse Transfer Capacitance |
Crss |
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f = 1.0 MHz, see fig. 5 |
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59 |
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Output Capacitance |
Coss |
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VDS = 1.0 V , f = 1.0 MHz |
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6630 |
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pF |
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VDS = 400 V , f = 1.0 MHz |
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155 |
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VGS = 0 V |
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Effective Output Capacitance |
Coss eff. |
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276 |
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VDS = 0 V to 400 Vc |
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Effective Output Capacitance |
Coss eff. (ER) |
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200 |
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Total Gate Charge |
Qg |
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ID = 31 A, VDS = 400 V, |
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210 |
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Gate-Source Charge |
Qgs |
VGS = 10 V |
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58 |
nC |
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b |
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Gate-Drain Charge |
Qgd |
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see fig. 7 and 13 |
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100 |
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Internal Gate Resistance |
Rg |
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f = 1 MHz, open drain |
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1.1 |
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Turn-On Delay Time |
td(on) |
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28 |
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Rise Time |
tr |
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VDD = 250 V, ID = 31 A, |
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115 |
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Turn-Off Delay Time |
td(off) |
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Rg = 4.3 , see fig. 10b |
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54 |
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Fall Time |
tf |
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53 |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
IS |
MOSFET symbol |
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D |
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31 |
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showing the |
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A |
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integral reverse |
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Pulsed Diode Forward Currenta |
ISM |
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G |
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124 |
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p - n junction diode |
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Body Diode Voltage |
VSD |
TJ = 25 °C, IS = 31 A, VGS = 0 Vb |
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1.5 |
V |
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Body Diode Reverse Recovery Time |
trr |
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TJ = 25 °C, IF = 31 A |
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170 |
250 |
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TJ = 125 °C, dI/dt = 100 A/μsb |
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330 |
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T = 25 °C, I |
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= 31 A, V |
GS |
= 0 Vb |
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570 |
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Body Diode Reverse Recovery Charge |
Qrr |
J |
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TJ = 125 °C, dI/dt = 100 A/μsb |
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1.2 |
1.8 |
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Reverse Recovery Current |
IRRM |
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TJ = 25 °C |
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7.9 |
12 |
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Forward Turn-On Time |
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com |
Document Number: 91220 |
2 |
S11-0488-Rev. C, 21-Mar-11 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP31N50L, SiHFP31N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
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100 |
VGS |
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Top |
15 V |
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12 V |
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10 V |
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<![if ! IE]> <![endif]>(A) |
100 |
8.0 V |
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7.0 V |
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<![if ! IE]> <![endif]>Current |
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6.0 V |
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Bottom |
5.5 V |
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5.0 V |
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<![if ! IE]> <![endif]>-to-Source |
10 |
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<![if ! IE]> <![endif]>, Drain |
1 |
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<![if ! IE]> <![endif]>D |
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5.0 V |
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<![if ! IE]> <![endif]>I |
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0.1 |
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20 μs PULSE WIDTH |
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0.01 |
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TJ = 25 °C |
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0.1 |
1 |
10 |
100 |
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
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100 |
VGS |
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Top |
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15 V |
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12 V |
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10 V |
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8.0 V |
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<![if ! IE]> <![endif]>(A) |
10 |
7.0 V |
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6.0 V |
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<![if ! IE]> <![endif]>Current |
Bottom |
5.5 V |
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5.0 V |
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<![if ! IE]> <![endif]>, Drain-to-Source |
1 |
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5.0 V |
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0.1 |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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20 μs PULSE WIDTH |
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0.01 |
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TJ = 150 °C |
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0.1 |
1 |
10 |
100 |
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VDS, Drain-to-Source Voltage (V) |
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Fig. 2 - Typical Output Characteristics
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1000 |
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<![if ! IE]> <![endif]>(A) |
100 |
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<![if ! IE]> <![endif]>Current |
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TJ = 150 °C |
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<![if ! IE]> <![endif]>-to-Source |
10 |
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<![if ! IE]> <![endif]>,Drain |
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TJ = 25 °C |
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1 |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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VDS = 50 V |
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0.1 |
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20 |
μs PULSE WIDTH |
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4 |
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6 |
7 |
8 |
9 |
10 |
11 |
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VGS, Gate-to-Source Voltage (V) |
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Fig. 3 - Typical Transfer Characteristics
<![if ! IE]> <![endif]>(Normalized) |
3.0 |
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ID = 31 A |
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2.5 |
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<![if ! IE]> <![endif]>Resistance |
2.0 |
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<![if ! IE]> <![endif]>-Source On |
1.5 |
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1.0 |
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<![if ! IE]> <![endif]>Drain-to |
0.5 |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>DS(on) |
0.0 |
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VGS = 10 V |
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<![if ! IE]> <![endif]>R |
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- 60 - 40 - 20 |
0 |
20 |
40 |
60 80 |
100 120 |
140 160 |
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TJ, Junction Temperature |
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Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91220 |
www.vishay.com |
S11-0488-Rev. C, 21-Mar-11 |
3 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000