Vishay IRFP26N60L, SiHFP26N60L Data Sheet

IRFP26N60L, SiHFP26N60L

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)

600

RDS(on) (Ω)

VGS = 10 V

0.21

Qg (Max.) (nC)

180

Qgs (nC)

61

Qgd (nC)

85

Configuration

Single

D

TO-247AC

G

S

D

S

G

N-Channel MOSFET

FEATURES

• Superfast body diode eliminates the need for

	external diodes in ZVS applications	Available
	• Lower gate charge results in simpler drive	Available
	requirements

•Enhanced dV/dt capabilities offer improved ruggedness

•Higher gate voltage threshold offers improved noise immunity

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Note

*This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.

APPLICATIONS

•Zero voltage switching (SMPS)

•Telecom and server power supplies

•Uninterruptible power supplies

•Motor control applications

ORDERING INFORMATION

	Package	TO-247AC
	Lead (Pb)-free	IRFP26N60LPbF
		SiHFP26N60L-E3
	SnPb	IRFP26N60L
		SiHFP26N60L

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	600	V
Gate-Source Voltage				VGS	± 30
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	26
			TC = 100 °C		17	A
Pulsed Drain Current a				IDM	100
Linear Derating Factor					3.8	W/°C
Single Pulse Avalanche Energy b				EAS	570	mJ
Repetitive Avalanche Current a				IAR	26	A
Repetitive Avalanche Energy a				EAR	47	mJ
Maximum Power Dissipation		TC = 25 °C		PD	470	W
Peak Diode Recovery dV/dt c				dV/dt	21	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +150	°C
Soldering Recommendations (Peak Temperature) d		for 10 s			300
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 1.7 mH, Rg = 25 Ω, IAS = 26 A, dV/dt = 21 V/ns (see fig. 12).

c.ISD ≤ 26 A, dI/dt ≤ 480 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

S15-0456-Rev. D, 16-Mar-15	1	Document Number: 91218
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP26N60L, SiHFP26N60L

www.vishay.com

THERMAL RESISTANCE RATINGS

Vishay Siliconix

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.27

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL		TEST CONDITIONS								MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS		VGS = 0 V, ID = 250 μA								600	-	-	V
VDS Temperature Coefficient		VDS/TJ		Reference to 25 °C, ID = 1 mA								-	0.33	-	V/°C
Gate-Source Threshold Voltage		VGS(th)		VDS = VGS, ID = 250 μA								3.0	-	5.0	V
Gate-Source Leakage		IGSS		VGS = ± 30 V								-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS		VDS = 600 V, VGS = 0 V								-	-	50	μA
			VDS = 480 V, VGS = 0 V, TJ = 125 °C									-	-	2.0	mA
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V			ID = 10 A b						-	0.21	0.25	Ω
Forward Transconductance		gfs		VDS = 50 V, ID = 16 A								13	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,							-	5020	-
Output Capacitance		Coss			VDS = 25 V,							-	450	-
				f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss										-	34	-	pF
Effective Output Capacitance		Coss eff.										-	230	-
Effective Output Capacitance			V	= 0 V		V = 0 V to 480 V c
		Coss eff. (ER)		GS		DS						-	170	-
(Energy related)
Total Gate Charge		Qg				ID = 26 A, VDS = 480 V,						-	-	180
Gate-Source Charge		Qgs	VGS = 10 V									-	-	61	nC
						see fig. 7 and 15b
Gate-Drain Charge		Qgd										-	-	85
Turn-On Delay Time		td(on)		VDD = 300 V, ID = 26 A,								-	31	-
Rise Time		tr										-	110	-
				Rg = 4.3 Ω,VGS = 10 V											ns
Turn-Off Delay Time		td(off)										-	47	-
				see fig. 11a and 11b b
Fall Time		tf										-	42	-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol									-	-	26
			showing the								D				A
Pulsed Diode Forward Current a		I	integral reverse			G						-	-	100
			p - n junction diode
		SM									S
Body Diode Voltage		VSD		TJ = 25 °C, IS = 26 A, VGS = 0 V b								-	-	1.5	V
Body Diode Reverse Recovery Time		trr		TJ = 25 °C, IF = 26 A								-	170	250	ns
				TJ = 125 °C, dI/dt = 100 A/μs b								-	210	320
Body Diode Reverse Recovery Charge		Qrr		TJ = 25 °C, IF = 26 A, VGS = 0 V b								-	670	1000	nC
				TJ = 125 °C, dI/dt = 100 A/μs b								-	1050	1570
Reverse Recovery Current		IRRM				TJ = 25 °C						-	7.3	11	A
Forward Turn-On Time		ton		Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS.

S15-0456-Rev. D, 16-Mar-15	2	Document Number: 91218
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP26N60L, SiHFP26N60L

www.vishay.com	Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	1000	VGS
	Top
		15 V
		12 V
		10 V
	100	8.0 V
<![if ! IE]> <![endif]>(A)		7.0 V
		6.5 V
<![if ! IE]> <![endif]>Current	Bottom	6.0 V
		5.5 V
	10
<![if ! IE]> <![endif]>-to-Source
	1
<![if ! IE]> <![endif]>, Drain
<![if ! IE]> <![endif]>D			5.5 V
<![if ! IE]> <![endif]>I	0.1
			20 μs PULSE WIDTH
	0.01		TJ = 25 °C
	0.1	1	10	100

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	100	Top	VGS
			15 V
			12 V
			10 V
<![if ! IE]> <![endif]>(A)			8.0 V
			7.0 V
			6.5 V
<![if ! IE]> <![endif]>Current
		Bottom	6.0 V
	10		5.5 V
<![if ! IE]> <![endif]>-to-Source				5.5 V
<![if ! IE]> <![endif]>, Drain	1
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
				20 μs PULSE WIDTH
	0.1			TJ = 150 °C
		0.1	1	10	100

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics

	1000.00
<![if ! IE]> <![endif]>(A)		100.00
<![if ! IE]> <![endif]>Current			TJ = 150 °C
<![if ! IE]> <![endif]>-to-Source
		10.00
					TJ = 25 °C
<![if ! IE]> <![endif]>,Drain
		1.00
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
						VDS = 50 V
		0.10				20 μs PULSE WIDTH
		2.0	4.0	6.0	8.0	10.0	12.0	14.0	16.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>(Normalized)

3.0

ID

= 26

A

<![if ! IE]> <![endif]>ResistanceOn

2.5

VGS =

10 V

2.0

<![if ! IE]> <![endif]>Source-to-Drain

1.0

<![if ! IE]> <![endif]>,

1.5

<![if ! IE]> <![endif]>DS(on)

<![if ! IE]> <![endif]>R

0.5

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature

Fig. 4 - Normalized On-Resistance vs. Temperature

S15-0456-Rev. D, 16-Mar-15	3	Document Number: 91218
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000