Vishay IRFP26N60L, SiHFP26N60L Data Sheet

www.vishay.com

TO-247AC

G

D

S

IRFP26N60L, SiHFP26N60L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V) 600

R

(Ω)V

DS(on)

Q

(Max.) (nC) 180

g

Q

(nC) 61

gs

Q

(nC) 85

gd

Configuration Single

= 10 V 0.21

GS

D

FEATURES

• Superfast body diode eliminates the need for
external diodes in ZVS applications

• Lower gate charge results in simpler drive
requirements

• Enhanced dV/dt capabilities offer improved ruggedness

• Higher gate voltage threshold offers improved noise
immunity

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

Note

*

Thi s datasheet pro vi des information about parts that are

G

RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

S

N-Channel MOSFET

APPLICATIONS

• Zero voltage switching (SMPS)

• Telecom and server power supplies

• Uninterruptible power supplies

• Motor control applications

ORDERING INFORMATION

Package TO-247AC

Lead (Pb)-free

SnPb

IRFP26N60LPbF

SiHFP26N60L-E3

IRFP26N60L

SiHFP26N60L

Available

Available

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

Gate-Source Voltage V

T

= 25 °C

Continuous Drain Current V

Pulsed Drain Current

a

at 10 V

GS

C

= 100 °C 17

C

DS

± 30

GS

I

D

IDM 100

Linear Derating Factor 3.8 W/°C

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation T

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range T

Soldering Recommendations (Peak Temperature)

b

a

a

= 25 °C P

c

d

C

for 10 s 300

E

AS

I

AR

E

AR

D

dV/dt 21 V/ns

, T

J

stg

Mounting Torque 6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I

SD

d. 1.6 mm from case.

S15-0456-Rev. D, 16-Mar-15

= 25 °C, L = 1.7 mH, Rg = 25 Ω, IAS = 26 A, dV/dt = 21 V/ns (see fig. 12).

J

≤ 26 A, dI/dt ≤ 480 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

1

For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

600

26

570 mJ

26 A

47 mJ

470 W

-55 to +150

10 lbf · in

1.1 N · m

Document Number: 91218

V

AT

°C

IRFP26N60L, SiHFP26N60L

S

D

G

www.vishay.com

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

Maximum Junction-to-Case (Drain) R

thJA

thCS

thJC

-40

0.24 -

-0.27

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

V

Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.33 - V/°C

DS

Gate-Source Threshold Voltage V

Gate-Source Leakage I

Zero Gate Voltage Drain Current I

Drain-Source On-State Resistance R

Forward Transconductance g

DS

GS(th)

V

GSS

DSS

VGS = 10 V ID = 10 A

DS(on)

fs

Dynamic

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Effective Output Capacitance C

Effective Output Capacitance
(Energy related)

Total Gate Charge Q

Gate-Drain Charge Q

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

iss

- 450 -

oss

-34-

rss

eff.

oss

C

eff. (ER) - 170 -

oss

g

--61

gs

--85

gd

d(on)

r

-47-

d(off)

-42-

f

V

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

Pulsed Diode Forward Current

a

Body Diode Voltage V

Body Diode Reverse Recovery Time t

Body Diode Reverse Recovery Charge Q

Reverse Recovery Current I

Forward Turn-On Time t

S

I

SM

SD

rr

RRM

on

rr

MOSFET symbol
showing the
integral reverse
p - n junction diode

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C

eff. is a fixed capacitance that gives the same charging time as C

oss

C

eff. (ER) is a fixed capacitance that stores the same energy as C

oss

VGS = 0 V, ID = 250 μA 600 - - V

VDS = VGS, ID = 250 μA 3.0 - 5.0 V

= ± 30 V - - ± 100 nA

GS

VDS = 600 V, VGS = 0 V - - 50 μA

V

= 480 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA

DS

b

VDS = 50 V, ID = 16 A 13 - - S

VGS = 0 V,

V

= 25 V,

DS

f = 1.0 MHz, see fig. 5

= 0 V VDS = 0 V to 480 V

V

GS

= 26 A, VDS = 480 V,

I

= 10 V

GS

V

D

see fig. 7 and 15

= 300 V, ID = 26 A,

DD

R

= 4.3 Ω,VGS = 10 V

g

see fig. 11a and 11b

TJ = 25 °C, IS = 26 A, VGS = 0 V

c

b

b

b

TJ = 25 °C, IF = 26 A - 170 250

= 125 °C, dI/dt = 100 A/μs

T

J

TJ = 25 °C, IF = 26 A, VGS = 0 V

= 125 °C, dI/dt = 100 A/μs

T

J

b

b

b

TJ = 25 °C - 7.3 11 A

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

while VDS is rising from 0 % to 80 % VDS.

oss

while VDS is rising from 0 % to 80 % VDS.

oss

Vishay Siliconix

°C/WCase-to-Sink, Flat, Greased Surface R

-0.210.25Ω

- 5020 -

- 230 -

--180

-31-

- 110 -

--26

--100

--1.5V

- 210 320

- 670 1000

- 1050 1570

pF

nC Gate-Source Charge Q

ns

A

ns

nC

S15-0456-Rev. D, 16-Mar-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: [e-mail]

2

Document Number: 91218

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I

D

, Drain-to-Source Current (A)

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

VGS
15 V
12 V
10 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom

Top

5.5 V

20 μs PULSE WIDTH
TJ = 150 °C

ID = 26 A

VGS = 10 V

TJ, Junction Temperature

R

DS(on)

, Drain-to-Source On Resistance (Normalized)

- 60 - 20- 40

0

20 40 60 80 100 120 140 160

0.5

1.0

1.5

2.0

2.5

3.0

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

IRFP26N60L, SiHFP26N60L

Vishay Siliconix

1000

100

Top

Bottom

VGS
15 V
12 V
10 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

10

1

, Drain-to-Source Current (A)

D

I

0.1

0.01

0.1

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

20 μs PULSE WIDTH
TJ = 25 °C

1

5.5 V

1000.00

100.00

TJ = 150 °C

10.00

TJ = 25 °C

, Drain-to-Source Current (A)

1.00

D

I

VDS = 50 V

0.10

2.0

4.0

10

100

6.0

20 μs PULSE WIDTH

10.0

8.0

12.0

14.0

16.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

S15-0456-Rev. D, 16-Mar-15

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 2 - Typical Output Characteristics

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 4 - Normalized On-Resistance vs. Temperature

3

For technical questions, contact: [e-mail]

Document Number: 91218