IRFP26N60L, SiHFP26N60L
www.vishay.com |
Vishay Siliconix |
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Power MOSFET |
PRODUCT SUMMARY
VDS (V) |
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600 |
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RDS(on) (Ω) |
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VGS = 10 V |
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0.21 |
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Qg (Max.) (nC) |
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180 |
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Qgs (nC) |
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61 |
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Qgd (nC) |
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85 |
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Configuration |
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Single |
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TO-247AC |
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G
N-Channel MOSFET
FEATURES
• Superfast body diode eliminates the need for
external diodes in ZVS applications |
Available |
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• Lower gate charge results in simpler drive |
Available |
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requirements |
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•Enhanced dV/dt capabilities offer improved ruggedness
•Higher gate voltage threshold offers improved noise immunity
•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
*This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.
APPLICATIONS
•Zero voltage switching (SMPS)
•Telecom and server power supplies
•Uninterruptible power supplies
•Motor control applications
ORDERING INFORMATION
Package |
TO-247AC |
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Lead (Pb)-free |
IRFP26N60LPbF |
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SiHFP26N60L-E3 |
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SnPb |
IRFP26N60L |
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SiHFP26N60L |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
600 |
V |
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Gate-Source Voltage |
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VGS |
± 30 |
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Continuous Drain Current |
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VGS at 10 V |
TC = 25 °C |
ID |
26 |
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TC = 100 °C |
17 |
A |
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Pulsed Drain Current a |
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IDM |
100 |
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Linear Derating Factor |
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3.8 |
W/°C |
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Single Pulse Avalanche Energy b |
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EAS |
570 |
mJ |
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Repetitive Avalanche Current a |
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IAR |
26 |
A |
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Repetitive Avalanche Energy a |
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EAR |
47 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
470 |
W |
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Peak Diode Recovery dV/dt c |
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dV/dt |
21 |
V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
-55 to +150 |
°C |
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Soldering Recommendations (Peak Temperature) d |
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for 10 s |
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300 |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
lbf · in |
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1.1 |
N · m |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Starting TJ = 25 °C, L = 1.7 mH, Rg = 25 Ω, IAS = 26 A, dV/dt = 21 V/ns (see fig. 12).
c.ISD ≤ 26 A, dI/dt ≤ 480 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d.1.6 mm from case.
S15-0456-Rev. D, 16-Mar-15 |
1 |
Document Number: 91218 |
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For technical questions, contact: hvm@vishay.com |
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP26N60L, SiHFP26N60L
www.vishay.com
THERMAL RESISTANCE RATINGS
Vishay Siliconix
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
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40 |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
0.24 |
- |
°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
- |
0.27 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
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TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
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VGS = 0 V, ID = 250 μA |
600 |
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V |
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VDS Temperature Coefficient |
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VDS/TJ |
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Reference to 25 °C, ID = 1 mA |
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0.33 |
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V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
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VDS = VGS, ID = 250 μA |
3.0 |
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5.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 30 V |
- |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
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VDS = 600 V, VGS = 0 V |
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50 |
μA |
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VDS = 480 V, VGS = 0 V, TJ = 125 °C |
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2.0 |
mA |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 10 A b |
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0.21 |
0.25 |
Ω |
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Forward Transconductance |
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gfs |
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VDS = 50 V, ID = 16 A |
13 |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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5020 |
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Output Capacitance |
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Coss |
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VDS = 25 V, |
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450 |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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34 |
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pF |
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Effective Output Capacitance |
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Coss eff. |
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230 |
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Effective Output Capacitance |
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V |
= 0 V |
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V = 0 V to 480 V c |
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Coss eff. (ER) |
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GS |
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DS |
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170 |
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(Energy related) |
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Total Gate Charge |
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Qg |
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ID = 26 A, VDS = 480 V, |
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180 |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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61 |
nC |
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see fig. 7 and 15b |
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Gate-Drain Charge |
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Qgd |
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- |
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85 |
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Turn-On Delay Time |
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td(on) |
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VDD = 300 V, ID = 26 A, |
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31 |
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Rise Time |
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tr |
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110 |
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Rg = 4.3 Ω,VGS = 10 V |
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Turn-Off Delay Time |
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td(off) |
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47 |
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see fig. 11a and 11b b |
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Fall Time |
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tf |
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42 |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
- |
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26 |
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showing the |
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Pulsed Diode Forward Current a |
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I |
integral reverse |
G |
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100 |
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p - n junction diode |
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SM |
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Body Diode Voltage |
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VSD |
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TJ = 25 °C, IS = 26 A, VGS = 0 V b |
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1.5 |
V |
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Body Diode Reverse Recovery Time |
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trr |
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TJ = 25 °C, IF = 26 A |
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170 |
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TJ = 125 °C, dI/dt = 100 A/μs b |
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210 |
320 |
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Body Diode Reverse Recovery Charge |
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Qrr |
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TJ = 25 °C, IF = 26 A, VGS = 0 V b |
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670 |
1000 |
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TJ = 125 °C, dI/dt = 100 A/μs b |
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1050 |
1570 |
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Reverse Recovery Current |
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IRRM |
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TJ = 25 °C |
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7.3 |
11 |
A |
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Forward Turn-On Time |
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ton |
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Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS.
S15-0456-Rev. D, 16-Mar-15 |
2 |
Document Number: 91218 |
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For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP26N60L, SiHFP26N60L
www.vishay.com |
Vishay Siliconix |
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) |
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1000 |
VGS |
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Top |
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15 V |
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12 V |
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10 V |
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100 |
8.0 V |
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<![if ! IE]> <![endif]>(A) |
7.0 V |
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6.5 V |
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<![if ! IE]> <![endif]>Current |
Bottom |
6.0 V |
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5.5 V |
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<![if ! IE]> <![endif]>D |
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5.5 V |
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<![if ! IE]> <![endif]>I |
0.1 |
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20 μs PULSE WIDTH |
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0.01 |
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TJ = 25 °C |
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0.1 |
1 |
10 |
100 |
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
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100 |
Top |
VGS |
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15 V |
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12 V |
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10 V |
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8.0 V |
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7.0 V |
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6.5 V |
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<![if ! IE]> <![endif]>Current |
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Bottom |
6.0 V |
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10 |
5.5 V |
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<![if ! IE]> <![endif]>-to-Source |
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5.5 V |
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<![if ! IE]> <![endif]>, Drain |
1 |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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20 μs PULSE WIDTH |
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0.1 |
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TJ = 150 °C |
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0.1 |
1 |
10 |
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VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
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1000.00 |
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<![if ! IE]> <![endif]>(A) |
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100.00 |
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<![if ! IE]> <![endif]>Current |
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TJ = 150 °C |
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<![if ! IE]> <![endif]>-to-Source |
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10.00 |
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TJ = 25 °C |
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<![if ! IE]> <![endif]>,Drain |
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1.00 |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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VDS = 50 V |
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0.10 |
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20 μs PULSE WIDTH |
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2.0 |
4.0 |
6.0 |
8.0 |
10.0 |
12.0 |
14.0 |
16.0 |
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
<![if ! IE]> <![endif]>(Normalized) |
3.0 |
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ID |
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A |
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<![if ! IE]> <![endif]>ResistanceOn |
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VGS = |
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2.0 |
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<![if ! IE]> <![endif]>Source-to-Drain |
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1.0 |
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<![if ! IE]> <![endif]>, |
1.5 |
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<![if ! IE]> <![endif]>DS(on) |
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<![if ! IE]> <![endif]>R |
0.5 |
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- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature
Fig. 4 - Normalized On-Resistance vs. Temperature
S15-0456-Rev. D, 16-Mar-15 |
3 |
Document Number: 91218 |
|
For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000