Vishay IRFP22N60K, SiHFP22N60K Data Sheet

IRFP22N60K, SiHFP22N60K

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• Low Gate Charge Qg Results in Simple Drive

VDS (V)

600

Requirement

Available

RDS(on) ( )

VGS = 10 V

0.24

• Improved Gate, Avalanche and Dynamic dV/dt

RoHS*

Qg (Max.) (nC)

150

Ruggedness

COMPLIANT

Qgs (nC)

45

• Fully Characterized Capacitance and Avalanche Voltage

Qgd (nC)

76

and Current

Configuration

Single

• Enhanced Body Diode dV/dt Capability

D

• Compliant to RoHS Directive 2002/95/EC

TO-247AC

BENEFITS

G

• Hard Switching Primary or PFS Switch

• Switch Mode Power Supply (SMPS)

S

• Uninterruptible Power Supply

D

S

• High Speed Power Switching

G

N-Channel MOSFET

• Motor Drive

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free

IRFP22N60KPbF

SiHFP22N60K-E3

SnPb

IRFP22N60K

SiHFP22N60K

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

22

TC = 100 °C

14

A

Pulsed Drain Currenta

IDM

88

Linear Derating Factor

2.9

W/°C

Single Pulse Avalanche Energyb

EAS

380

mJ

Repetitive Avalanche Currenta

IAR

22

A

Repetitive Avalanche Energya

EAR

37

mJ

Maximum Power Dissipation

TC = 25 °C

PD

370

W

Peak Diode Recovery dV/dtc

dV/dt

15

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 , IAS = 22 A (see fig. 12).

c.ISD 22 A, dI/dt 360 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91208	www.vishay.com
S11-0445-Rev. B, 21-Mar-11	1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP22N60K, SiHFP22N60K

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.34

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

	PARAMETER	SYMBOL	TEST CONDITIONS			MIN.	TYP.	MAX.	UNIT
	Static
	Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 μA			600	-	-	V
	VDS Temperature Coefficient	VDS/TJ	Reference to 25 °C, ID = 1 mAd			-	0.30	-	V/°C
	Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 μA			3.0	-	5.0	V
	Gate-Source Leakage	IGSS		VGS = ± 30 V		-	-	± 100	nA
	Zero Gate Voltage Drain Current	IDSS	VDS = 600 V, VGS = 0 V			-	-	50	μA
			VDS = 480 V, VGS = 0 V, TJ = 125 °C			-	-	250
	Drain-Source On-State Resistance	RDS(on)	VGS = 10 V		ID = 13 Ab	-	0.240	0.280
	Forward Transconductance	gfs	VDS = 50 V, ID = 13 Ab			11	-	-	S
	Dynamic
	Input Capacitance	Ciss			VGS = 0 V,	-	3570	-
	Output Capacitance	Coss			VDS = 25 V,	-	350	-
			f = 1.0 MHz, see fig. 5
	Reverse Transfer Capacitance	Crss				-	36	-	pF
	Output Capacitance	Coss			VDS = 1.0 V , f = 1.0 MHz	-	4710	-
			VGS = 0 V		VDS = 480 V , f = 1.0 MHz	-	92	-
	Effective Output Capacitance	Coss eff.			VDS = 0 V to 480 V	-	180	-
	Total Gate Charge	Qg			ID = 22 A, VDS = 480 V	-	-	150
	Gate-Source Charge	Qgs	VGS = 10 V			-	-	45	nC
					see fig. 6 and 13b
	Gate-Drain Charge	Qgd				-	-	76
	Turn-On Delay Time	td(on)				-	26	-
	Rise Time	tr	VDD = 300 V, ID = 22 A,			-	99	-	ns
			Rg = 6.2, VGS = 10 V,
	Turn-Off Delay Time	td(off)				-	48	-
					see fig. 10b
	Fall Time	tf				-	37	-

Drain-Source Body Diode Characteristics

	Continuous Source-Drain Diode Current	IS	MOSFET symbol		D	-	-	22
			showing the
									A
	Pulsed Diode Forward Currenta		integral reverse		G
		ISM	p - n junction diode		S	-	-	88
	Body Diode Voltage	VSD	TJ = 25 °C, IS = 22 A, VGS = 0 Vb			-	-	1.5	V
	Body Diode Reverse Recovery Time	trr	TJ = 25 °C			-	590	890	ns
			TJ = 125 °C	IF	= 22 A,	-	670	1010
			TJ = 25 °C	dI/dt = 100 A/μsb		-	7.2	11
	Body Diode Reverse Recovery Charge	Qrr							μC
			TJ =1 25 °C			-	8.5	13
	Reverse Recovery Current	IRRM	TJ = 25 °C			-	26	39
	Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
	Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.

www.vishay.com	Document Number: 91208
2	S11-0445-Rev. B, 21-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP22N60K, SiHFP22N60K

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	100	VGS
	TOP	15V
		12V
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	10	8.0V
		7.0V
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<![if ! IE]> <![endif]>err
		5.5V
<![if ! IE]> <![endif]>uC	BOTTOM 5.0V
	1
<![if ! IE]> <![endif]>ecur oS-
	0.1
<![if ! IE]> <![endif]>ot-
		5.0V
<![if ! IE]> <![endif]>Dnair
	0.01
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<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I

20µs PULSE WIDTH

Tj = 25°C

0.001

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	100.00
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<![if ! IE]> <![endif]>(
<![if ! IE]> <![endif]>nt	10.00
<![if ! IE]> <![endif]>err
<![if ! IE]> <![endif]>uC
<![if ! IE]> <![endif]>ecur	1.00
<![if ! IE]> <![endif]>oS-	TJ = 25°C
<![if ! IE]> <![endif]>ot-
<![if ! IE]> <![endif]>Dnair	0.10
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I	VDS = 50V

20µs PULSE WIDTH

0.01

5.0

6.0

7.0

8.0

9.0

10.0

VGS, Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

	100	VGS					3.0
	TOP						ID = 22A
		15V
		12V
<![if ! IE]> <![endif]>)Ane(rrt	10	10V			<![if ! IE]> <![endif]>Resistance		2.5
		5.5V
		8.0V
		7.0V
		6.0V
<![if ! IE]> <![endif]>uC ecSuorDanor--ti	BOTTOM 5.0V				<![if ! IE]> <![endif]>Source-to-Drain, On		2.0
						<![if ! IE]> <![endif]>(Normalized)
							1.5
			5.0V
	1						1.0
					<![if ! IE]> <![endif]>DS(on)
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>I			20µs PULSE WIDTH		<![if ! IE]> <![endif]>r		0.5
	0.1		Tj = 150°C												V GS = 10V
							0.0
	0.1	1	10	100
							-60	-40 -20	0	20	40	60	80	100	120 140	160

VDS, Drain-to-Source Voltage (V)	TJ, Junction Temperature (° C)
Fig. 2 - Typical Output Characteristics	Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91208	www.vishay.com
S11-0445-Rev. B, 21-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000