IRFP22N60K, SiHFP22N60K
Vishay Siliconix
Power MOSFET
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FEATURES |
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PRODUCT SUMMARY |
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• Low Gate Charge Qg Results in Simple Drive |
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VDS (V) |
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600 |
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Requirement |
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Available |
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RDS(on) ( ) |
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VGS = 10 V |
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0.24 |
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• Improved Gate, Avalanche and Dynamic dV/dt |
RoHS* |
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Qg (Max.) (nC) |
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150 |
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Ruggedness |
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COMPLIANT |
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Qgs (nC) |
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45 |
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• Fully Characterized Capacitance and Avalanche Voltage |
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Qgd (nC) |
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76 |
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and Current |
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Configuration |
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Single |
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• Enhanced Body Diode dV/dt Capability |
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• Compliant to RoHS Directive 2002/95/EC |
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TO-247AC |
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BENEFITS |
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G |
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• Hard Switching Primary or PFS Switch |
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• Switch Mode Power Supply (SMPS) |
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S |
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• Uninterruptible Power Supply |
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D |
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S |
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• High Speed Power Switching |
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G |
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N-Channel MOSFET |
• Motor Drive |
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ORDERING INFORMATION |
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Package |
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TO-247AC |
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Lead (Pb)-free |
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IRFP22N60KPbF |
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SiHFP22N60K-E3 |
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SnPb |
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IRFP22N60K |
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SiHFP22N60K |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
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PARAMETER |
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SYMBOL |
LIMIT |
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UNIT |
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Drain-Source Voltage |
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VDS |
600 |
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V |
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Gate-Source Voltage |
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VGS |
± 30 |
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Continuous Drain Current |
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VGS at 10 V |
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TC = 25 °C |
ID |
22 |
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TC = 100 °C |
14 |
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A |
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Pulsed Drain Currenta |
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IDM |
88 |
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Linear Derating Factor |
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2.9 |
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W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
380 |
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mJ |
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Repetitive Avalanche Currenta |
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IAR |
22 |
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A |
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Repetitive Avalanche Energya |
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EAR |
37 |
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mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
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PD |
370 |
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W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
15 |
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V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
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°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Starting TJ = 25 °C, L = 1.5 mH, Rg = 25 , IAS = 22 A (see fig. 12).
c.ISD 22 A, dI/dt 360 A/μs, VDD VDS, TJ 150 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91208 |
www.vishay.com |
S11-0445-Rev. B, 21-Mar-11 |
1 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
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Maximum Junction-to-Ambient |
RthJA |
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40 |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
0.24 |
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°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
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0.34 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
VDS |
VGS = 0 V, ID = 250 μA |
600 |
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V |
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VDS Temperature Coefficient |
VDS/TJ |
Reference to 25 °C, ID = 1 mAd |
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0.30 |
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V/°C |
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Gate-Source Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250 μA |
3.0 |
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5.0 |
V |
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Gate-Source Leakage |
IGSS |
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VGS = ± 30 V |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
IDSS |
VDS = 600 V, VGS = 0 V |
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50 |
μA |
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VDS = 480 V, VGS = 0 V, TJ = 125 °C |
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250 |
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Drain-Source On-State Resistance |
RDS(on) |
VGS = 10 V |
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ID = 13 Ab |
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0.240 |
0.280 |
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Forward Transconductance |
gfs |
VDS = 50 V, ID = 13 Ab |
11 |
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Dynamic |
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Input Capacitance |
Ciss |
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VGS = 0 V, |
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3570 |
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Output Capacitance |
Coss |
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VDS = 25 V, |
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350 |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
Crss |
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36 |
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pF |
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Output Capacitance |
Coss |
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VDS = 1.0 V , f = 1.0 MHz |
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4710 |
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VGS = 0 V |
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VDS = 480 V , f = 1.0 MHz |
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92 |
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Effective Output Capacitance |
Coss eff. |
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VDS = 0 V to 480 V |
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180 |
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Total Gate Charge |
Qg |
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ID = 22 A, VDS = 480 V |
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150 |
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Gate-Source Charge |
Qgs |
VGS = 10 V |
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nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
Qgd |
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76 |
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Turn-On Delay Time |
td(on) |
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26 |
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Rise Time |
tr |
VDD = 300 V, ID = 22 A, |
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99 |
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Rg = 6.2, VGS = 10 V, |
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Turn-Off Delay Time |
td(off) |
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48 |
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see fig. 10b |
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Fall Time |
tf |
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37 |
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Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current |
IS |
MOSFET symbol |
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D |
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22 |
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showing the |
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Pulsed Diode Forward Currenta |
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integral reverse |
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ISM |
p - n junction diode |
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S |
- |
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88 |
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Body Diode Voltage |
VSD |
TJ = 25 °C, IS = 22 A, VGS = 0 Vb |
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1.5 |
V |
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Body Diode Reverse Recovery Time |
trr |
TJ = 25 °C |
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590 |
890 |
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TJ = 125 °C |
IF |
= 22 A, |
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670 |
1010 |
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TJ = 25 °C |
dI/dt = 100 A/μsb |
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7.2 |
11 |
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Body Diode Reverse Recovery Charge |
Qrr |
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μC |
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TJ =1 25 °C |
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8.5 |
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Reverse Recovery Current |
IRRM |
TJ = 25 °C |
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26 |
39 |
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Forward Turn-On Time |
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
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Notes |
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a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
c.Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS.
www.vishay.com |
Document Number: 91208 |
2 |
S11-0445-Rev. B, 21-Mar-11 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP22N60K, SiHFP22N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
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VGS |
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TOP |
15V |
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12V |
<![if ! IE]> <![endif]>)A(t |
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10V |
10 |
8.0V |
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7.0V |
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<![if ! IE]> <![endif]>n |
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6.0V |
<![if ! IE]> <![endif]>err |
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5.5V |
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<![if ! IE]> <![endif]>uC |
BOTTOM 5.0V |
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1 |
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<![if ! IE]> <![endif]>ecur oS- |
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0.1 |
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<![if ! IE]> <![endif]>ot- |
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5.0V |
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<![if ! IE]> <![endif]>Dnair |
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0.01 |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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20µs PULSE WIDTH
Tj = 25°C
0.001
0.1 |
1 |
10 |
100 |
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
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100.00 |
<![if ! IE]> <![endif]>A) |
TJ = 150°C |
<![if ! IE]> <![endif]>( |
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<![if ! IE]> <![endif]>nt |
10.00 |
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<![if ! IE]> <![endif]>err |
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<![if ! IE]> <![endif]>uC |
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<![if ! IE]> <![endif]>ecur |
1.00 |
<![if ! IE]> <![endif]>oS- |
TJ = 25°C |
<![if ! IE]> <![endif]>ot- |
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<![if ! IE]> <![endif]>Dnair |
0.10 |
<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
VDS = 50V |
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20µs PULSE WIDTH
0.01
5.0 |
6.0 |
7.0 |
8.0 |
9.0 |
10.0 |
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
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100 |
VGS |
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3.0 |
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TOP |
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ID = 22A |
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15V |
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12V |
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<![if ! IE]> <![endif]>)Ane(rrt |
10 |
10V |
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<![if ! IE]> <![endif]>Resistance |
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2.5 |
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5.5V |
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8.0V |
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7.0V |
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6.0V |
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<![if ! IE]> <![endif]>uC ecSuorDanor--ti |
BOTTOM 5.0V |
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<![if ! IE]> <![endif]>Source-to-Drain, On |
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2.0 |
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<![if ! IE]> <![endif]>(Normalized) |
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1.5 |
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5.0V |
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1 |
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1.0 |
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<![if ! IE]> <![endif]>DS(on) |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>I |
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20µs PULSE WIDTH |
<![if ! IE]> <![endif]>r |
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0.5 |
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0.1 |
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Tj = 150°C |
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V GS = 10V |
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0.0 |
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0.1 |
1 |
10 |
100 |
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-60 |
-40 -20 |
0 |
20 |
40 |
60 |
80 |
100 |
120 140 |
160 |
VDS, Drain-to-Source Voltage (V) |
TJ, Junction Temperature (° C) |
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Fig. 2 - Typical Output Characteristics |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91208 |
www.vishay.com |
S11-0445-Rev. B, 21-Mar-11 |
3 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000