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IRFP21N60L, SiHFP21N60L
Available
RoHS*
COMPLIANT
Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 600
R
()V
DS(on)
Q
(Max.) (nC) 150
g
Q
(nC) 46
gs
Q
(nC) 64
gd
Configuration Single
= 10 V 0.27
GS
D
FEATURES
• Superfast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
• Lower Gate Charge Results in Simple Drive
Requirements
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Zero Voltage Switching SMPS
G
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
S
N-Channel MOSFET
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
SnPb
IRFP21N60LPbF
SiHFP21N60L-E3
IRFP21N60L
SiHFP21N60L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
T
= 25 °C
Continuous Drain Current V
Pulsed Drain Current
a
at 10 V
GS
C
= 100 °C 13
T
C
DS
± 30
GS
I
D
IDM 84
Linear Derating Factor 2.6 W/°C
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
b
a
a
= 25 °C P
c
C
E
AS
I
AR
E
AR
D
dV/dt 16 V/ns
, T
J
stg
Soldering Recommendations (Peak Temperature) for 10 s 300
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
c. I
SD
d. 1.6 mm from case.
= 25 °C, L = 1.9 mH, Rg = 25 , IAS = 21 A, dV/dt = 11 V/ns (see fig. 12a).
J
21 A, dI/dt 530 A/μs, VDD VDS, TJ 150 °C.
600
21
420 mJ
21 A
33 mJ
330 W
- 55 to + 150
d
10 lbf · in
1.1 N · m
V
A
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91206 www.vishay.com
S11-0446-Rev. C, 14-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
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IRFP21N60L, SiHFP21N60L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 420 - mV/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Effective Output Capacitance C
Effective Output Capacitance
(Energy Related)
Total Gate Charge Q
Gate-Drain Charge Q
Gate Resistance R
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Reverse Recovery Time I
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. C
eff. is a fixed capacitance that gives the same charging time as C
oss
C
eff. (ER) is a fixed capacitance that stores the same energy as C
oss
www.vishay.com Document Number: 91206
2 S11-0446-Rev. C, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 13 A
DS(on)
fs
iss
- 340 -
oss
-29-
rss
eff.
oss
C
eff. (ER) - 130 -
oss
g
--46
gs
--64
gd
g
d(on)
r
-33-
d(off)
-10-
f
S
I
SM
SD
rr
rr
RRM
on
V
V
GS
MOSFET symbol
showing the
integral reverse
p - n junction diode
This datasheet is subject to change without notice.
-40
0.24 -
°C/WCase-to-Sink, Flat, Greased Surface R
-0.38
VGS = 0 V, ID = 250 μA 600 - - V
VDS = VGS, ID = 250 μA 3.0 - 5.0 V
= ± 30 V - - ± 100 nA
GS
VDS = 600 V, VGS = 0 V - - 50 μA
= 480 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA
DS
b
- 0.27 0.32
VDS = 50 V, ID = 13 A 11 - - S
VGS = 0 V,
= 25 V,
V
DS
- 4000 -
f = 1.0 MHz, see fig. 5
V
= 0 V,
GS
V
= 0 V to 480 V
DS
c
- 170 -
- - 150
= 21 A, VDS = 480 V
I
= 10 V
D
see fig. 7 and 15
b
f = 1 MHz, open drain - 0.63 -
-20-
= 300 V, ID = 21 A,
V
DD
= 1.3 , VGS = 10 V,
R
g
see fig. 11a and 11b
b
G
TJ = 25 °C, IS = 21 A, VGS = 0 V
TJ = 25 °C, IF = 21 A
T
= 125 °C, dI/dt = 100 A/μs
J
TJ = 25 °C, IF = 21 A, VGS = 0 V
T
= 125 °C, dI/dt = 100 A/μs
J
D
S
b
b
b
b
-58-
--21
--84
--1.5V
- 160 240
- 400 610
- 480 730
- 1540 2310
TJ = 25 °C - 5.3 7.9 A
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
while VDS is rising form 0 % to 80 % VDS.
oss
while VDS is rising from 0 % to 80 % VDS.
oss
www.vishay.com/doc?91000
pF
nC Gate-Source Charge Q
ns
A
ns
nC
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
5.5V
20µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
4 6 8 10 12 14 16
VGS, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
TJ= 25°C
TJ= 150°C
VDS= 50V
20µs PULSE WIDTH
IRFP21N60L, SiHFP21N60L
Vishay Siliconix
1000
TOP 15V
100
)
A
(
t
n
e
r
10
r
u
C
e
c
r
u
o
S
o
t
n
i
a
r
D
,
D
I
BOTTOM 5.5V
1
0.1
0.01
VGS
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
20µs PULSE WIDTH
Tj = 25°C
0.001
0.1 1 10 100 1000
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
3.0
e
c
n
a
t
s
i
s
e
R
n
O
e
c
r
u
o
S
o
t
n
i
a
r
D
,
)
n
o
(
S
D
R
ID= 21A
V
= 10V
GS
2.5
2.0
)
d
e
z
i
l
1.5
a
m
r
o
N
(
1.0
0.5
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics
Document Number: 91206 www.vishay.com
S11-0446-Rev. C, 14-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 4 - Normalized On-Resistance vs. Temperature
This datasheet is subject to change without notice.
www.vishay.com/doc?91000