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IRFP17N50L, SiHFP17N50L |
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Vishay Siliconix |
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Power MOSFET |
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FEATURES |
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PRODUCT SUMMARY |
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• SuperFast Body Diode Eliminates the Need |
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VDS (V) |
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500 |
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For External Diodes in ZVS Applications |
Available |
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RDS(on) (Ω) |
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VGS = 10 V |
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0.28 |
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• Low Gate Charge |
Results in Simple Drive |
RoHS* |
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Qg (Max.) (nC) |
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130 |
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Requirement |
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COMPLIANT |
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Qgs (nC) |
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33 |
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• Enhanced dV/dt Capabilities Offer Improved |
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Qgd (nC) |
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59 |
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Ruggedness |
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Configuration |
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• Higher Gate Voltage Threshold Offers Improved Noise |
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D |
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Immunity |
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TO-247AC |
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• Compliant to RoHS Directive 2002/95/EC |
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APPLICATIONS |
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G |
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• Zero Voltage Switching SMPS |
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• Telecom and Server Power Supplies |
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S |
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• Uninterruptible Power Supply |
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D |
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S |
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• Motor Control applications |
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N-Channel MOSFET |
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ORDERING INFORMATION |
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Package |
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TO-247AC |
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Lead (Pb)-free |
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IRFP17N50LPbF |
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SiHFP17N50L-E3 |
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SnPb |
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IRFP17N50L |
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SiHFP17N50L |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
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PARAMETER |
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SYMBOL |
LIMIT |
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UNIT |
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Drain-Source Voltage |
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VDS |
500 |
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V |
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Gate-Source Voltage |
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VGS |
± 30 |
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Continuous Drain Current |
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VGS at 10 V |
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TC = 25 °C |
ID |
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TC = 100 °C |
11 |
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A |
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Pulsed Drain Currenta |
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IDM |
64 |
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Linear Derating Factor |
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1.8 |
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W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
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mJ |
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Repetitive Avalanche Currenta |
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IAR |
16 |
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A |
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Repetitive Avalanche Energya |
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EAR |
22 |
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mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
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PD |
220 |
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W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
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V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
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°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
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lbf · in |
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1.1 |
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N · m |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Starting TJ = 25 °C, L = 3.0 mH, Rg = 25 Ω, IAS = 16 A (see fig. 12).
c.ISD ≤ 16 A, dI/dt ≤ 347 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91205 |
www.vishay.com |
S11-0446-Rev. B, 14-Mar-11 |
1 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP17N50L, SiHFP17N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
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62 |
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Case-to-Sink, Flat, Greased Surface |
RthCS |
0.50 |
- |
°C/W |
Maximum Junction-to-Case (Drain) |
RthJC |
- |
0.56 |
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SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
VDS |
VGS = 0 V, ID = 250 μA |
500 |
- |
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V |
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VDS Temperature Coefficient |
VDS/TJ |
Reference to 25 °C, ID = 1 mAd |
- |
0.60 |
- |
V/°C |
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Gate-Source Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250 μA |
3.0 |
- |
5.0 |
V |
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Gate-Source Leakage |
IGSS |
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VGS = ± 30 V |
- |
- |
± 100 |
nA |
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Zero Gate Voltage Drain Current |
IDSS |
VDS = 500 V, VGS = 0 V |
- |
- |
50 |
μA |
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VDS = 400 V, VGS = 0 V, TJ = 125 °C |
- |
- |
2.0 |
mA |
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Drain-Source On-State Resistance |
RDS(on) |
VGS = 10 V |
ID = 9.9 Ab |
- |
0.28 |
0.32 |
Ω |
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Forward Transconductance |
gfs |
VDS = 50 V, ID = 9.9 Ab |
11 |
- |
- |
S |
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Dynamic |
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Input Capacitance |
Ciss |
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VGS = 0 V, |
- |
2760 |
- |
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Output Capacitance |
Coss |
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VDS = 25 V, |
- |
325 |
- |
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Reverse Transfer Capacitance |
Crss |
f = 1.0 MHz, see fig. 5 |
- |
37 |
- |
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Output Capacitance |
Coss |
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VDS = 1.0 V , f = 1.0 MHz |
- |
3690 |
- |
pF |
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VDS = 400 V , f = 1.0 MHz |
- |
84 |
- |
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Effective Output Capacitance |
Coss eff. |
VGS = 0 V |
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- |
159 |
- |
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Effective Output Capacitance |
Coss eff. (ER) |
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VDS = 0 V to 400 V |
- |
120 |
- |
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(Energy Related) |
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Internal Gate Resistance |
Rg |
f = 1 MHz, open drain |
- |
1.4 |
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Ω |
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Total Gate Charge |
Qg |
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ID = 16 A, VDS = 400 V |
- |
- |
130 |
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Gate-Source Charge |
Qgs |
VGS = 10 V |
- |
- |
33 |
nC |
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see fig. 7 and 15b |
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Gate-Drain Charge |
Qgd |
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- |
- |
59 |
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Turn-On Delay Time |
td(on) |
VDD = 250 V, ID = 16 A |
- |
21 |
- |
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Rise Time |
tr |
- |
51 |
- |
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RG = 7.5 Ω, VGS = 10 V |
ns |
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Turn-Off Delay Time |
td(off) |
- |
50 |
- |
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see fig. 14a and 14bb |
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Fall Time |
tf |
- |
28 |
- |
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Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current |
IS |
MOSFET symbol |
D |
- |
- |
16 |
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showing the |
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A |
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integral reverse |
G |
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Pulsed Diode Forward Currenta |
ISM |
- |
- |
64 |
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p - n junction diode |
S |
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Body Diode Voltage |
VSD |
TJ = 25 °C, IS = 16 A, VGS = 0 Vb |
- |
- |
1.5 |
V |
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Body Diode Reverse Recovery Time |
trr |
TJ = 25 °C |
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- |
170 |
250 |
ns |
TJ = 125 °C |
IF = 16 A, |
- |
220 |
330 |
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Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25 °C |
dI/dt = 100 A/μsb |
- |
470 |
710 |
μC |
TJ = 125 °C |
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- |
810 |
1210 |
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Reverse Recovery Current |
IRRM |
TJ = 25 °C |
- |
7.3 |
11 |
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Forward Turn-On Time |
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
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Notes |
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a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c.COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising fom 0 % to 80 % VDS. COSS eff. (ER) is a fixed capacitance that stores the same energy as COSS while VDS is rising fom 0 % to 80 % VDS.
www.vishay.com |
Document Number: 91205 |
2 |
S11-0446-Rev. B, 14-Mar-11 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFP17N50L, SiHFP17N50L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
|
100 |
VGS |
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TOP |
15V |
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12V |
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<![if ! IE]> <![endif]>)A( |
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10V |
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10 |
8.0V |
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<![if ! IE]> <![endif]>t |
7.0V |
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<![if ! IE]> <![endif]>n |
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6.0V |
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<![if ! IE]> <![endif]>err |
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5.5V |
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<![if ! IE]> <![endif]>u |
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BOTTOM 5.0V |
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<![if ! IE]> <![endif]>Cec ur |
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1 |
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<![if ! IE]> <![endif]>oS- |
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<![if ! IE]> <![endif]>ot- |
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5.0V |
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<![if ! IE]> <![endif]>aDnir |
0.1 |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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20µs PULSE WIDTH |
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Tj = 25°C |
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0.01 |
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0.1 |
1 |
10 |
100 |
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
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100 |
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VGS |
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TOP |
15V |
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12V |
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<![if ! IE]> <![endif]>A)( |
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10V |
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8.0V |
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<![if ! IE]> <![endif]>t |
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7.0V |
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<![if ! IE]> <![endif]>n |
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6.0V |
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<![if ! IE]> <![endif]>err |
10 |
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5.5V |
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<![if ! IE]> <![endif]>Cu |
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BOTTOM 5.0V |
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<![if ! IE]> <![endif]>ecr |
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5.0V |
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<![if ! IE]> <![endif]>uoS- |
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<![if ! IE]> <![endif]>ot- |
1 |
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<![if ! IE]> <![endif]>ni |
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<![if ! IE]> <![endif]>aDr, |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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20µs PULSE WIDTH |
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Tj = 150°C |
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0.1 |
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0.1 |
1 |
10 |
100 |
VDS, Drain-to-Source Voltage (V)
|
100 |
<![if ! IE]> <![endif]>Current (A) |
TJ = 150° C |
10 |
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<![if ! IE]> <![endif]>Drain-to-Source |
T = 25°C |
J |
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1 |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>D |
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<![if ! IE]> <![endif]>I |
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VDS= 50V |
20µs PULSE WIDTH 0.1
4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
<![if ! IE]> <![endif]>Resistance |
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3.0 |
ID = 16A |
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2.5 |
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<![if ! IE]> <![endif]>Drain-to-Source On |
<![if ! IE]> <![endif]>(Normalized) |
2.0 |
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1.5 |
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1.0 |
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<![if ! IE]> <![endif]>, |
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<![if ! IE]> <![endif]>DS(on) |
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0.5 |
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VGS= 10V |
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0.0 |
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-60 -40 -20 |
0 |
20 |
40 60 |
80 |
100 120 140 160 |
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T , Junction Temperature (° C) |
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J |
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Fig. 2 - Typical Output Characteristics |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91205 |
www.vishay.com |
S11-0446-Rev. B, 14-Mar-11 |
3 |
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000