Vishay IRFP17N50L, SiHFP17N50L Data Sheet

IRFP17N50L, SiHFP17N50L

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

• SuperFast Body Diode Eliminates the Need

VDS (V)

500

For External Diodes in ZVS Applications

Available

RDS(on) (Ω)

VGS = 10 V

0.28

• Low Gate Charge

Results in Simple Drive

RoHS*

Qg (Max.) (nC)

130

Requirement

COMPLIANT

Qgs (nC)

33

• Enhanced dV/dt Capabilities Offer Improved

Qgd (nC)

59

Ruggedness

Configuration

Single

• Higher Gate Voltage Threshold Offers Improved Noise

D

Immunity

TO-247AC

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

G

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

S

• Uninterruptible Power Supply

D

S

• Motor Control applications

G

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free

IRFP17N50LPbF

SiHFP17N50L-E3

SnPb

IRFP17N50L

SiHFP17N50L

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

500

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

16

TC = 100 °C

11

A

Pulsed Drain Currenta

IDM

64

Linear Derating Factor

1.8

W/°C

Single Pulse Avalanche Energyb

EAS

390

mJ

Repetitive Avalanche Currenta

IAR

16

A

Repetitive Avalanche Energya

EAR

22

mJ

Maximum Power Dissipation

TC = 25 °C

PD

220

W

Peak Diode Recovery dV/dtc

dV/dt

13

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

300d

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Starting TJ = 25 °C, L = 3.0 mH, Rg = 25 Ω, IAS = 16 A (see fig. 12).

c.ISD ≤ 16 A, dI/dt ≤ 347 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d.1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91205	www.vishay.com
S11-0446-Rev. B, 14-Mar-11	1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP17N50L, SiHFP17N50L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	62
Case-to-Sink, Flat, Greased Surface	RthCS	0.50	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.56

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

	PARAMETER	SYMBOL	TEST CONDITIONS		MIN.	TYP.	MAX.	UNIT
	Static
	Drain-Source Breakdown Voltage	VDS	VGS = 0 V, ID = 250 μA		500	-	-	V
	VDS Temperature Coefficient	VDS/TJ	Reference to 25 °C, ID = 1 mAd		-	0.60	-	V/°C
	Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 μA		3.0	-	5.0	V
	Gate-Source Leakage	IGSS		VGS = ± 30 V	-	-	± 100	nA
	Zero Gate Voltage Drain Current	IDSS	VDS = 500 V, VGS = 0 V		-	-	50	μA
			VDS = 400 V, VGS = 0 V, TJ = 125 °C		-	-	2.0	mA
	Drain-Source On-State Resistance	RDS(on)	VGS = 10 V	ID = 9.9 Ab	-	0.28	0.32	Ω
	Forward Transconductance	gfs	VDS = 50 V, ID = 9.9 Ab		11	-	-	S
	Dynamic
	Input Capacitance	Ciss		VGS = 0 V,	-	2760	-
	Output Capacitance	Coss		VDS = 25 V,	-	325	-
	Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 5		-	37	-
	Output Capacitance	Coss		VDS = 1.0 V , f = 1.0 MHz	-	3690	-	pF
				VDS = 400 V , f = 1.0 MHz	-	84	-
	Effective Output Capacitance	Coss eff.	VGS = 0 V		-	159	-
	Effective Output Capacitance	Coss eff. (ER)		VDS = 0 V to 400 V	-	120	-
	(Energy Related)
	Internal Gate Resistance	Rg	f = 1 MHz, open drain		-	1.4	-	Ω
	Total Gate Charge	Qg		ID = 16 A, VDS = 400 V	-	-	130
	Gate-Source Charge	Qgs	VGS = 10 V		-	-	33	nC
				see fig. 7 and 15b
	Gate-Drain Charge	Qgd			-	-	59
	Turn-On Delay Time	td(on)	VDD = 250 V, ID = 16 A		-	21	-
	Rise Time	tr			-	51	-
			RG = 7.5 Ω, VGS = 10 V					ns
	Turn-Off Delay Time	td(off)			-	50	-
			see fig. 14a and 14bb
	Fall Time	tf			-	28	-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current	IS	MOSFET symbol	D	-	-	16
		showing the
							A
		integral reverse	G
Pulsed Diode Forward Currenta	ISM			-	-	64
		p - n junction diode	S
Body Diode Voltage	VSD	TJ = 25 °C, IS = 16 A, VGS = 0 Vb		-	-	1.5	V
Body Diode Reverse Recovery Time	trr	TJ = 25 °C		-	170	250	ns
		TJ = 125 °C	IF = 16 A,	-	220	330
Body Diode Reverse Recovery Charge	Qrr	TJ = 25 °C	dI/dt = 100 A/μsb	-	470	710	μC
		TJ = 125 °C		-	810	1210
Reverse Recovery Current	IRRM	TJ = 25 °C		-	7.3	11
Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

c.COSS eff. is a fixed capacitance that gives the same charging time as COSS while VDS is rising fom 0 % to 80 % VDS. COSS eff. (ER) is a fixed capacitance that stores the same energy as COSS while VDS is rising fom 0 % to 80 % VDS.

www.vishay.com	Document Number: 91205
2	S11-0446-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP17N50L, SiHFP17N50L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

	100	VGS
	TOP	15V
		12V
<![if ! IE]> <![endif]>)A(		10V
	10	8.0V
<![if ! IE]> <![endif]>t		7.0V
<![if ! IE]> <![endif]>n
		6.0V
<![if ! IE]> <![endif]>err
		5.5V
<![if ! IE]> <![endif]>u
	BOTTOM 5.0V
<![if ! IE]> <![endif]>Cec ur
	1
<![if ! IE]> <![endif]>oS-
<![if ! IE]> <![endif]>ot-			5.0V
<![if ! IE]> <![endif]>aDnir	0.1
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I			20µs PULSE WIDTH
			Tj = 25°C
	0.01
	0.1	1	10	100

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics

	100
		VGS
	TOP	15V
		12V
<![if ! IE]> <![endif]>A)(		10V
		8.0V
<![if ! IE]> <![endif]>t		7.0V
<![if ! IE]> <![endif]>n
		6.0V
<![if ! IE]> <![endif]>err	10
		5.5V
<![if ! IE]> <![endif]>Cu
	BOTTOM 5.0V
<![if ! IE]> <![endif]>ecr			5.0V
<![if ! IE]> <![endif]>uoS-
<![if ! IE]> <![endif]>ot-	1
<![if ! IE]> <![endif]>ni
<![if ! IE]> <![endif]>aDr,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I			20µs PULSE WIDTH
			Tj = 150°C
	0.1
	0.1	1	10	100

VDS, Drain-to-Source Voltage (V)

	100
<![if ! IE]> <![endif]>Current (A)	TJ = 150° C
	10
<![if ! IE]> <![endif]>Drain-to-Source	T = 25°C
	J
	1
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>D
<![if ! IE]> <![endif]>I
	VDS= 50V

20µs PULSE WIDTH 0.1

4.0 5.0 6.0 7.0 8.0 9.0 10.0

VGS , Gate-to-Source Voltage (V)

Fig. 3 - Typical Transfer Characteristics

<![if ! IE]> <![endif]>Resistance		3.0	ID = 16A
		2.5
<![if ! IE]> <![endif]>Drain-to-Source On	<![if ! IE]> <![endif]>(Normalized)	2.0
		1.5
		1.0
<![if ! IE]> <![endif]>,
<![if ! IE]> <![endif]>DS(on)		0.5
								VGS= 10V
<![if ! IE]> <![endif]>R		0.0
		-60 -40 -20		0	20	40 60	80	100 120 140 160
			T , Junction Temperature (° C)
			J

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91205	www.vishay.com
S11-0446-Rev. B, 14-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000