Vishay IRFP048R, SiHFP048R Data Sheet

IRFP048R, SiHFP048R

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)		60
RDS(on) ( )	VGS = 10 V		0.018
Qg max. (nC)		110
Qgs (nC)		29
Qgd (nC)		38
Configuration		Single

D

TO-247AC

G

DS S

G

N-Channel MOSFET

FEATURES

• Dynamic dV/dt rating

• Isolated central mounting hole

• 175 °C operating temperature

•Ease of paralleling

•Simple drive requirements

•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION

Package	TO-247AC
Lead (Pb)-free	IRFP048RPbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	60	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current e		VGS at 10 V	TC = 25 °C	ID	70
Continuous Drain Current			TC = 100 °C		52	A
Pulsed Drain Current a				IDM	290
Linear Derating Factor					1.3	W/°C
Single Pulse Avalanche Energy b				EAS	200	mJ
Maximum Power Dissipation		TC = 25 °C		PD	190	W
Peak Diode Recovery dV/dt c				dV/dt	4.5	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +175	°C
Soldering Recommendations (Peak temperature) d		for 10 s			300
Mounting Torque		6-32 or M3 screw			10	lbf · in
					1.1	N · m

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 25 V, starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 73 A (see fig. 12).

c.ISD 72 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.

d.1.6 mm from case.

e.Current limited by the package (die current = 73 A)

S16-0015-Rev. C, 18-Jan-16	1	Document Number: 91199
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP048R, SiHFP048R

www.vishay.com

THERMAL RESISTANCE RATINGS

Vishay Siliconix

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	0.80

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

60

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.060

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

-

-

25

μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C

-

-

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 44 A b

-

-

0.018

Forward Transconductance

gfs

VDS = 25 V, ID = 44 A b

20

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

2400

-

Output Capacitance

Coss

VDS = 25 V,

-

1300

-

pF

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

190

-

Total Gate Charge

Qg

ID = 72 A, VDS = 48 V

-

-

110

Gate-Source Charge

Qgs

VGS = 10 V

-

-

29

nC

see fig. 6 and 13 b

Gate-Drain Charge

Qgd

-

-

38

Turn-On Delay Time

td(on)

-

8.1

-

Rise Time

tr

VDD = 30 V, ID = 72 A,

-

250

-

ns

Turn-Off Delay Time

td(off)

Rg = 9.1 , RD = 0.34 , see fig. 10 b

-

210

-

Fall Time

tf

-

250

-

Internal Drain Inductance

LD

Between lead,

D

-

5.0

-

6 mm (0.25") from

Internal Source Inductance

LS

package and center of

G

-

13

-

nH

die contact

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

70c

showing the

A

Pulsed Diode Forward Current a

ISM

integral reverse

G

-

-

290

p - n junction diode

S

Body Diode Voltage

VSD

TJ = 25 °C, IS = 73 A, VGS = 0 V b

-

-

2.0

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μs b

-

120

180

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.50

0.80

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Current limited by the package (die current = 73 A).

S16-0015-Rev. C, 18-Jan-16	2	Document Number: 91199
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP048R, SiHFP048R

www.vishay.com	Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

					Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

S16-0015-Rev. C, 18-Jan-16	3	Document Number: 91199
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000