Vishay IRFP048R, SiHFP048R Data Sheet
www.vishay.com
N-Channel MOSFET
G
D
S
TO-247AC
G
D
S
IRFP048R, SiHFP048R
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 60
R
()V
DS(on)
Q
max. (nC) 110
g
Q
(nC) 29
gs
Q
(nC) 38
gd
Configuration Single
= 10 V 0.018
GS
FEATURES
• Dynamic dV/dt rating
• Isolated central mounting hole
• 175 °C operating temperature
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free IRFP048RPbF
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Pulsed Drain Current
a
e
VGS at 10 V
T
= 25 °C
C
= 100 °C 52
C
DS
± 20
GS
I
D
IDM 290
Linear Derating Factor 1.3 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak temperature)
b
= 25 °C P
c
d
C
for 10 s 300
E
AS
D
dV/dt 4.5 V/ns
, T
J
stg
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 43 μH, Rg = 25 , IAS = 73 A (see fig. 12).
DD
c. I
72 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
SD
d. 1.6 mm from case.
e. Current limited by the package (die current = 73 A)
S16-0015-Rev. C, 18-Jan-16
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
60
70
200 mJ
190 W
-55 to +175
10 lbf · in
1.1 N · m
Document Number: 91199
V
AContinuous Drain Current T
°C
IRFP048R, SiHFP048R
D
S
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
-40
0.24 -
-0.80
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
iss
- 1300 -
oss
-190-
rss
g
--29
gs
--38
gd
d(on)
r
-210-
d(off)
-250-
f
D
Between lead,
6 mm (0.25") from
package and center of
Internal Source Inductance L
S
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Current limited by the package (die current = 73 A).
VGS = 0 V, ID = 250 μA 60 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 60 V, VGS = 0 V - - 25
= 48 V, VGS = 0 V, TJ = 150 °C - - 250
V
DS
= 10 V ID = 44 A
GS
VDS = 25 V, ID = 44 A
b
b
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 72 A, VDS = 48 V
I
V
= 10 V
GS
V
R
DD
= 9.1 , RD = 0.34, see fig. 10
g
TJ = 25 °C, IS = 73 A, VGS = 0 V
D
see fig. 6 and 13
= 30 V, ID = 72 A,
b
b
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/WCase-to-Sink, Flat, Greased Surface R
- - 0.018
20 - - S
- 2400 -
- - 110
-8.1-
-250-
-5.0-
-13-
--70
- - 290
--2.0V
- 120 180 ns
- 0.50 0.80 μC
c
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
S16-0015-Rev. C, 18-Jan-16
2
Document Number: 91199
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFP048R, SiHFP048R
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-0015-Rev. C, 18-Jan-16
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Document Number: 91199
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