Vishay IRFP048, SiHFP048 Data Sheet
Power MOSFET
TO-247AC
G
D
S
Available
RoHS*
COMPLIANT
IRFP048, SiHFP048
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 60
(Ω)V
R
DS(on)
Q
(Max.) (nC) 110
g
Q
(nC) 29
gs
Q
(nC) 38
gd
= 10 V 0.018
GS
FEATURES
• Dynamic dV/dt Rating
• Isolated Central Mounting Hole
• 175 °C Operating Temperature
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Configuration Single
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-247AC package is preferred for
commercial-industrial applications where higher power
levels preclude the use of TO-220AB devices. The
S
N-Channel MOSFET
TO-247AC is similar but superior to the earlier TO-218
package because its isolated mounting hole. It also provides
greater creepage distances between pins to meet the
requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247AC
Lead (Pb)-free
SnPb
IRFP048PbF
SiHFP048-E3
IRFP048
SiHFP048
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Continuous Drain Current T
Pulsed Drain Current
e
VGS at 10 V
a
T
= 25 °C
C
= 100 °C 52
C
DS
± 20
GS
I
D
IDM 290
Linear Derating Factor 1.3 W/°C
Single Pulse Avalanche Energy
Maximum Power Dissipation T
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
b
= 25 °C P
c
d
C
for 10 s 300
E
AS
D
dV/dt 4.5 V/ns
, T
J
stg
Mounting Torque 6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 25 V, starting TJ = 25 °C, L = 43 μH, Rg = 25 Ω, IAS = 73 A (see fig. 12).
DD
≤ 72 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
c. I
SD
d. 1.6 mm from case.
e. Current limited by the package (die current = 73 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91198 www.vishay.com
S11-0447-Rev. B, 14-Mar-11 1
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
60
70
200 mJ
190 W
- 55 to + 175
10 lbf · in
1.1 N · m
www.vishay.com/doc?91000
V
A
°C
IRFP048, SiHFP048
D
S
G
S
D
G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
Maximum Junction-to-Case (Drain) R
thJA
thCS
thJC
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
Temperature Coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 -
V
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Current limited by the package (die current = 73 A).
DS
GS(th)
V
GSS
DSS
V
DS(on)
fs
iss
- 1300 -
oss
- 190 -
rss
g
--29
gs
--38
gd
d(on)
r
- 210 -
d(off)
- 250 -
f
D
V
V
R
Between lead,
6 mm (0.25") from
package and center of
S
S
I
SM
SD
rr
rr
on
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μs
-40
0.24 -
°C/WCase-to-Sink, Flat, Greased Surface R
-0.80
VGS = 0 V, ID = 250 μA 60 - -
VDS = VGS, ID = 250 μA 2.0 -
= ± 20 V - -
GS
VDS = 60 V, VGS = 0 V - -
= 48 V, VGS = 0 V, TJ = 150 °C - -
DS
= 10 V ID = 44 A
GS
VDS = 25 V, ID = 44 A
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
b
b
--
20 - -
- 2400 -
4.0 V
± 100 nA
25
250
0.018 Ω
- - 110
= 72 A, VDS = 48 V
I
= 10 V
GS
D
see fig. 6 and 13
b
-8.1-
V
= 30 V, ID = 72 A,
DD
= 9.1 Ω, RD = 0.34 Ω, see fig. 10
g
b
- 250 -
-5.0-
-13-
--70
c
- - 290
TJ = 25 °C, IS = 73 A, VGS = 0 V
b
--2.0
- 120 180
b
- 0.50 0.80
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
V
V/°C
μA
S
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
V
ns
μC
www.vishay.com Document Number: 91198
2 S11-0447-Rev. B, 14-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFP048, SiHFP048
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, T
= 175 °C
C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91198 www.vishay.com
S11-0447-Rev. B, 14-Mar-11 3
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
This datasheet is subject to change without notice.
www.vishay.com/doc?91000
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