Vishay IRFP048, SiHFP048 Data Sheet

IRFP048, SiHFP048

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)				60
RDS(on) (Ω)		VGS = 10 V			0.018
Qg (Max.) (nC)				110
Qgs (nC)				29
Qgd (nC)				38
Configuration				Single
							D
TO-247AC
		G
	S
G	D						S

N-Channel MOSFET

FEATURES

• Dynamic dV/dt Rating

	• Isolated Central Mounting Hole	Available
		RoHS*
	• 175 °C Operating Temperature
		COMPLIANT

•Ease of Paralleling

•Simple Drive Requirements

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

ORDERING INFORMATION
Package				TO-247AC
Lead (Pb)-free				IRFP048PbF
				SiHFP048-E3
SnPb				IRFP048
				SiHFP048
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER						SYMBOL	LIMIT		UNIT
Drain-Source Voltage						VDS	60		V
Gate-Source Voltage						VGS	± 20
Continuous Drain Currente		VGS at 10 V		TC = 25 °C		ID	70
Continuous Drain Current				TC = 100 °C			52		A
Pulsed Drain Currenta						IDM	290
Linear Derating Factor							1.3		W/°C
Single Pulse Avalanche Energyb						EAS	200		mJ
Maximum Power Dissipation		TC = 25 °C				PD	190		W
Peak Diode Recovery dV/dtc						dV/dt	4.5		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 175		°C
Soldering Recommendations (Peak Temperature)d		for 10 s					300
Mounting Torque		6-32 or M3 screw					10		lbf · in
							1.1		N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 43 μH, Rg = 25 Ω, IAS = 73 A (see fig. 12).
c. ISD ≤ 72 A, dI/dt ≤ 200 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package (die current = 73 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91198								www.vishay.com
S11-0447-Rev. B, 14-Mar-11								1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

13

-

5.0

-

2400

1300

190

-

-

-

8.1

250

210

250

-

-

-

110

29

38

-

-

-

-

-

0.018

-

-

4.0

± 100

25

250

-

0.060

-

-

-

-

-

-

TYP.

UNIT

°C/W

MAX.

IRFP048, SiHFP048

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.
Maximum Junction-to-Ambient	RthJA	-	40
Case-to-Sink, Flat, Greased Surface	RthCS	0.24	-
Maximum Junction-to-Case (Drain)	RthJC	-	0.80

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

60

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

2.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

-

VDS = 48 V, VGS = 0 V, TJ = 150 °C

-

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 44 Ab

-

Forward Transconductance

gfs

VDS = 25 V, ID = 44 Ab

20

Dynamic

-

Input Capacitance

Ciss

VGS = 0 V,

Output Capacitance

Coss

VDS = 25 V,

-

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

Total Gate Charge

Qg

ID = 72 A, VDS = 48 V

-

Gate-Source Charge

Qgs

VGS = 10 V

-

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

Turn-On Delay Time

td(on)

-

Rise Time

tr

VDD = 30 V, ID

= 72 A,

-

Turn-Off Delay Time

td(off)

Rg = 9.1 Ω, RD = 0.34

Ω, see fig. 10b

-

Fall Time

tf

-

Internal Drain Inductance

LD

Between lead,

D

-

6 mm (0.25") from

Internal Source Inductance

LS

package and center of

G

-

die contact

S

Drain-Source Body Diode Characteristics

UNIT

V

V/°C

V

nA

μA

Ω

S

pF

nC

ns

nH

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

70c

showing the

A

integral reverse

G

Pulsed Diode Forward Currenta

ISM

p - n junction diode

S

-

-

290

Body Diode Voltage

VSD

TJ = 25 °C, IS = 73 A, VGS = 0 Vb

-

-

2.0

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 72 A, dI/dt = 100 A/μsb

-

120

180

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.50

0.80

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 μs; duty cycle ≤ 2 %.

c.Current limited by the package (die current = 73 A).

www.vishay.com	Document Number: 91198
2	S11-0447-Rev. B, 14-Mar-11

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFP048, SiHFP048

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

			Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91198	www.vishay.com
S11-0447-Rev. B, 14-Mar-11	3

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000