Vishay IRFL214, SiHFL214 Data Sheet
www.vishay.com
SOT-223
G
D
S
D
IRFL214, SiHFL214
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) 250
R
()V
DS(on)
Q
(Max.) (nC) 8.2
g
Q
(nC) 1.8
gs
Q
(nC) 4.5
gd
Configuration Single
= 10 V 2.0
GS
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
Marking code: FD
N-Channel MOSFET
S
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package SOT-223 SOT-223
Lead (Pb)-free and Halogen-free SiHFL214-GE3
Lead (Pb)-free
IRFL214PbF IRFL214TRPbF
SiHFL214-E3 SiHFL214T-E3
Note
a. See device orientation.
SiHFL214TR-GE3
Available
a
a
a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current V
Pulsed Drain Current
a
Linear Derating Factor 0.025
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
e
b
a
a
Maximum Power Dissipation T
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
c
e
Operating Junction and Storage Temperature Range T
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting TJ = 25 °C, L = 128 mH, Rg = 25 , IAS = 0.79 A (see fig. 12).
DD
c. I
2.7 A, dI/dt 65 A/μs, VDD VDS, TJ 150 °C.
SD
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S14-1685-Rev. E, 18-Aug-14
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
at 10 V
GS
= 25 °C
C
TA = 25 °C 2.0
d
for 10 s 300
DS
± 20
GS
T
= 25 °C
C
= 100 °C 0.50
C
I
D
IDM 6.3
E
AS
I
AR
E
AR
P
D
dV/dt 4.8 V/ns
, T
J
stg
-55 to +150
1
250
0.79
0.017
W/°C
50 mJ
0.79 A
0.31 mJ
3.1
Document Number: 91194
V
AT
W
°C
IRFL214, SiHFL214
D
G
S
D
G
www.vishay.com
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT
Maximum Junction-to-Ambient
(PCB Mount)
a
Maximum Junction-to-Case (Drain) R
R
thJA
thJC
--60
--40
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
V
Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.39 - V/°C
DS
Gate-Source Threshold Voltage V
Gate-Source Leakage I
Zero Gate Voltage Drain Current I
Drain-Source On-State Resistance R
Forward Transconductance g
DS
GS(th)
V
GSS
DSS
VGS = 10 V ID = 0.47 A
DS(on)
fs
Dynamic
Input Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge Q
Gate-Drain Charge Q
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Internal Drain Inductance L
Internal Source Inductance L
iss
-42-
oss
-9.6-
rss
g
--1.8
gs
--4.5
gd
d(on)
r
-16-
d(off)
-7.0-
f
D
S
V
Between lead,
6 mm (0.25") from
package and center of
die contact
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
Pulsed Diode Forward Current
a
Body Diode Voltage V
Body Diode Reverse Recovery Time t
Body Diode Reverse Recovery Charge Q
Forward Turn-On Time t
S
I
SM
SD
rr
rr
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 °C, IF = 2.7 A, dI/dt = 100 A/μs
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
VGS = 0 V, ID = 250 μA 250 - - V
VDS = VGS, ID = 250 μA 2.0 - 4.0 V
= ± 20 V - - ± 100 nA
GS
VDS = 250 V, VGS = 0 V - - 25
= 200 V, VGS = 0 V, TJ = 125 °C - - 250
V
DS
b
VDS = 50 V, ID = 0.47 A 0.50 - - S
VGS = 0 V,
V
= 25 V,
DS
f = 1.0 MHz, see fig. 5
= 2.7 A, VDS = 200 V,
I
= 10 V
GS
V
R
= 24 , RD = 45 , see fig. 10
g
TJ = 25 °C, IS = 0.79 A, VGS = 0 V
D
see fig. 6 and 13
= 125 V, ID = 2.7 A,
DD
b
b
b
b
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Vishay Siliconix
°C/W
--2.0
- 140 -
--8.2
-7.0-
-7.6-
-4.0-
-6.0-
- - 0.79
--6.3
--2.0V
- 190 390 ns
-0.641.3μC
μA
pFOutput Capacitance C
nC Gate-Source Charge Q
ns
nH
A
S14-1685-Rev. E, 18-Aug-14
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: hvm@vishay.com
2
Document Number: 91194
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRFL214, SiHFL214
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 3 - Typical Transfer Characteristics
S14-1685-Rev. E, 18-Aug-14
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
3
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Document Number: 91194
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