Vishay IRFL210, SiHFL210 Data Sheet

IRFL210, SiHFL210

www.vishay.com	Vishay Siliconix
	Power MOSFET

PRODUCT SUMMARY

VDS (V)		200
RDS(on) ( )	VGS = 10 V		1.5
Qg (Max.) (nC)		8.2
Qgs (nC)		1.8
Qgd (nC)		4.5
Configuration		Single
			D

SOT-223

D

G

S

D

G

S

N-Channel MOSFET

Marking code: FC

FEATURES

• Surface mount

•Available in tape and reel

•Dynamic dV/dt rating

•Repetitive avalanche rated

• Fast switching

Available

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

DESCRIPTION

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.

ORDERING INFORMATION

	Package	SOT-223	SOT-223
	Lead (Pb)-free and Halogen-free	SiHFL210-GE3	SiHFL210TR-GE3 a
	Lead (Pb)-free	IRFL210PbF	IRFL210TRPbF a
		SiHFL210-E3	SiHFL210T-E3 a

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER				SYMBOL	LIMIT	UNIT
Drain-Source Voltage				VDS	200	V
Gate-Source Voltage				VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C	ID	0.96
			TC = 100 °C		0.6	A
Pulsed Drain Current a				IDM	7.7
Linear Derating Factor					0.025	W/°C
Linear Derating Factor (PCB Mount) e					0.017
Single Pulse Avalanche Energy b				EAS	50	mJ
Repetitive Avalanche Current a				IAR	0.96	A
Repetitive Avalanche Energy a				EAR	0.31	mJ
Maximum Power Dissipation		TC = 25 °C		PD	3.1	W
Maximum Power Dissipation (PCB Mount) e		TA = 25 °C			2.0
Peak Diode Recovery dV/dt c				dV/dt	5.0	V/ns
Operating Junction and Storage Temperature Range				TJ, Tstg	-55 to +150	°C
Soldering Recommendations (Peak Temperature) d		for 10 s			300

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V, starting TJ = 25 °C, L = 81 mH, RG = 25 , IAS = 0.96 A (see fig. 12).

c.ISD 3.3 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

e.When mounted on 1" square PCB (FR-4 or G-10 material).

S14-1685-Rev. E, 18-Aug-14	1	Document Number: 91193
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFL210, SiHFL210

www.vishay.com					Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER	SYMBOL	MIN.	TYP.	MAX.		UNIT
Maximum Junction-to-Ambient	RthJA	-	-	40
(PCB Mount) a						°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	-	60

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER		SYMBOL	TEST CONDITIONS										MIN.	TYP.	MAX.	UNIT
Static
Drain-Source Breakdown Voltage		VDS	VGS = 0 V, ID = 250 μA										200	-	-	V
VDS Temperature Coefficient		VDS/TJ	Reference to 25 °C, ID = 1 mA										-	0.30	-	V/°C
Gate-Source Threshold Voltage		VGS(th)	VDS = VGS, ID = 250 μA										2.0	-	4.0	V
Gate-Source Leakage		IGSS		VGS = ± 20 V									-	-	± 100	nA
Zero Gate Voltage Drain Current		IDSS	VDS = 200 V, VGS = 0 V										-	-	25	μA
			VDS = 160 V, VGS = 0 V, TJ = 125 °C										-	-	250
Drain-Source On-State Resistance		RDS(on)	VGS = 10 V		ID = 0.58 A b								-	-	1.5
Forward Transconductance		gfs	VDS = 50 V, ID = 0.58 A										0.51	-	-	S
Dynamic
Input Capacitance		Ciss			VGS = 0 V,								-	140	-
Output Capacitance		Coss			VDS = 25 V,								-	53	-	pF
			f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance		Crss											-	15	-
Total Gate Charge		Qg			ID = 3.3 A, VDS = 160 V,								-	-	8.2
Gate-Source Charge		Qgs	VGS = 10 V										-	-	1.8	nC
					see fig. 6 and 13 b
Gate-Drain Charge		Qgd											-	-	4.5
Turn-On Delay Time		td(on)											-	8.2	-
Rise Time		tr	VDD = 100 V, ID = 3.3 A,										-	17	-	ns
Turn-Off Delay Time		td(off)	Rg = 24 , RD = 30 , see fig. 10 b										-	14	-
Fall Time		tf											-	8.9	-
Internal Drain Inductance		LD	Between lead,								D		-	4.0	-
			6 mm (0.25") from
Internal Source Inductance		LS	package and center of			G							-	6.0	-	nH
			die contact
											S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current		IS	MOSFET symbol									D	-	-	0.96
			showing the													A
Pulsed Diode Forward Current a		ISM	integral reverse			G							-	-	7.7
			p - n junction diode									S
Body Diode Voltage		VSD	TJ = 25 °C, IS = 0.96 A, VGS = 0 V b										-	-	2.0	V
Body Diode Reverse Recovery Time		trr	TJ = 25 °C, IF = 3.3 A, dI/dt = 100 A/μs b										-	150	310	ns
Body Diode Reverse Recovery Charge		Qrr											-	0.60	1.4	μC
Forward Turn-On Time		ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

S14-1685-Rev. E, 18-Aug-14	2	Document Number: 91193
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFL210, SiHFL210

www.vishay.com	Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

101

Top

VGS

15 V

10 V

<![if ! IE]> <![endif]>(A)

8.0 V

7.0 V

<![if ! IE]> <![endif]>CurrentDrain,

6.0 V

100

5.5 V

Bottom

5.0 V

<![if ! IE]> <![endif]>D

10

-1

4.5 V

4.5 V

<![if ! IE]> <![endif]>I

20 µs Pulse Width

TC = 25 °C

10-1

100

101

91193_01

VDS, Drain-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C

Top

VGS

15 V

10 V

<![if ! IE]> <![endif]>(A)

8.0 V

100

7.0 V

<![if ! IE]> <![endif]>Current

6.0 V

5.5 V

5.0 V

Bottom

4.5 V

<![if ! IE]> <![endif]>,Drain

10-1

4.5 V

<![if ! IE]> <![endif]>D

<![if ! IE]> <![endif]>I

20 µs Pulse Width

TC = 150 °C

10-1

100

101

91193_02

VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 150 °C

	<![if ! IE]> <![endif]>Resistance	3.5
			ID = 3.3 A
		3.0	VGS = 10 V
	<![if ! IE]> <![endif]>Source-to-DrainOn (Normalized)	2.5
		2.0
		1.5
		1.0
	<![if ! IE]> <![endif]>,	0.5
	<![if ! IE]> <![endif]>DS(on)	0.0
	<![if ! IE]> <![endif]>R
		- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
	91193_04				TJ, Junction Temperature (°C)

Fig. 4 - Normalized On-Resistance vs. Temperature

	300
							VGS = 0 V, f = 1 MHz
	250						Ciss = Cgs + Cgd, Cds Shorted
							Crss = Cgd
<![if ! IE]> <![endif]>(pF)	200						Coss = Cds + Cgd
<![if ! IE]> <![endif]>Capacitance
	150										Ciss
	100										Coss
	50										Crss
	0
	100		101
91193_05			VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

<![if ! IE]>

<![endif]>ID, Drain Current (A)

100 150 °C

25 °C

10-1

10-2 20 µs Pulse Width VDS = 50 V

4

5

6

7

8

9

10

	20	ID = 3.3 A
<![if ! IE]> <![endif]>(V)
				VDS = 160 V
<![if ! IE]> <![endif]>Voltage	16
				VDS = 100 V
			VDS = 40 V
<![if ! IE]> <![endif]>to-Source	12
	8
<![if ! IE]> <![endif]>, Gate-	4
<![if ! IE]> <![endif]>GS					For test circuit
<![if ! IE]> <![endif]>V
	0				see figure 13
	0	2	4	6	8	10

91193_03	VGS, Gate-to-Source Voltage (V)		91193_06	Q , Total Gate Charge (nC)
				G
	Fig. 3 - Typical Transfer Characteristics		Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
S14-1685-Rev. E, 18-Aug-14		3		Document Number: 91193
	For technical questions, contact: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000