IRFIZ44G, SiHFIZ44G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
60 |
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RDS(on) (Ω) |
VGS = 10 V |
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0.028 |
Qg (Max.) (nC) |
95 |
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Qgs (nC) |
27 |
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Qgd (nC) |
46 |
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Configuration |
Single |
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FEATURES
•Isolated Package
•High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
•Sink to Lead Creepage Distance = 4.8 mm
•175 °C Operating Temperature
•Dynamic dV/dt Rating
Available
RoHS*
COMPLIANT
D
TO-220 FULLPAK
G
S
G D S N-Channel MOSFET
•Low Thermal Resistance
•Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. The isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
ORDERING INFORMATION
Package |
TO-220 FULLPAK |
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Lead (Pb)-free |
IRFIZ44GPbF |
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SiHFIZ44G-E3 |
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SnPb |
IRFIZ44G |
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SiHFIZ44G |
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ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
60 |
V |
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Gate-Source Voltage |
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VGS |
± 20 |
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Continuous Drain Current |
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VGS at 10 V |
TC = 25 °C |
ID |
30 |
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TC = 100 °C |
21 |
A |
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Pulsed Drain Currenta |
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IDM |
120 |
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Linear Derating Factor |
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0.32 |
W/°C |
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Single Pulse Avalanche Energyb |
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EAS |
100 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
48 |
W |
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Peak Diode Recovery dV/dtc |
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dV/dt |
4.5 |
V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 175 |
°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Mounting Torque |
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6-32 or M3 screw |
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10 |
lbf · in |
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1.1 |
N · m |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = 25 V, starting TJ = 25 °C, L = 129 µH, RG = 25 Ω, IAS = 30 A (see fig. 12).
c.ISD ≤ 52 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d.1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91189 |
www.vishay.com |
S09-0010-Rev. A, 19-Jan-09 |
1 |
IRFIZ44G, SiHFIZ44G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
- |
65 |
°C/W |
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Maximum Junction-to-Case (Drain) |
RthJC |
- |
3.1 |
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SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0 V, ID = 250 µA |
60 |
- |
- |
V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = 1 mA |
- |
0.060 |
- |
V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 µA |
2.0 |
- |
4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 20 V |
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- |
- |
± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 60 V, VGS = 0 V |
- |
- |
25 |
µA |
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VDS = 48 V, VGS = 0 V, TJ = 150 °C |
- |
- |
250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 10 V |
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ID = 18 Ab |
- |
- |
0.028 |
Ω |
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Forward Transconductance |
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gfs |
VDS = 25 V, ID = 18 Ab |
15 |
- |
- |
S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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- |
2500 |
- |
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Output Capacitance |
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Coss |
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VDS = 25 V, |
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- |
1200 |
- |
pF |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
- |
200 |
- |
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Drain to Sink Capacitance |
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C |
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f = 1.0 MHz |
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- |
12 |
- |
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Total Gate Charge |
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Qg |
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ID = 52 A, VDS = 48 V, |
- |
- |
95 |
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Gate-Source Charge |
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Qgs |
VGS = 10 V |
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- |
- |
27 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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- |
- |
46 |
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Turn-On Delay Time |
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td(on) |
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- |
19 |
- |
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Rise Time |
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tr |
VDD = 30 V, ID = 52 A, |
- |
120 |
- |
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RG = 9.1 Ω, RD= 0.54 Ω, |
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ns |
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Turn-Off Delay Time |
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td(off) |
- |
55 |
- |
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see fig. 10b |
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Fall Time |
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tf |
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- |
86 |
- |
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Internal Drain Inductance |
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LD |
Between lead, |
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D |
- |
4.5 |
- |
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6 mm (0.25") from |
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nH |
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package and center of |
G |
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Internal Source Inductance |
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LS |
die contact |
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S |
- |
7.5 |
- |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
- |
- |
30 |
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showing the |
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A |
Pulsed Diode Forward Currenta |
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ISM |
integral reverse |
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G |
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- |
- |
120 |
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p - n junction diode |
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S |
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Body Diode Voltage |
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V |
T = 25 °C, I |
S |
= 30 A, V |
GS |
= 0 Vb |
- |
- |
2.5 |
V |
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SD |
J |
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Body Diode Reverse Recovery Time |
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trr |
T = 25 °C, I |
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= 52 A, dI/dt = 100 A/µsb |
- |
140 |
300 |
ns |
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F |
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Body Diode Reverse Recovery Charge |
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Qrr |
J |
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- |
1.2 |
2.8 |
µC |
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Forward Turn-On Time |
|
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com |
Document Number: 91189 |
2 |
S09-0010-Rev. A, 19-Jan-09 |
IRFIZ44G, SiHFIZ44G
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
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Fig. 1 - Typical Output Characteristics, TC = 25 °C |
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Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics, TC = 175 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 91189 |
www.vishay.com |
S09-0010-Rev. A, 19-Jan-09 |
3 |