Vishay IRFIZ34G, SiHFIZ34G Data Sheet
Document Number: 91188 www.vishay.com
S09-0010-Rev. A, 19-Jan-09 1
Power MOSFET
IRFIZ34G, SiHFIZ34G
Vishay Siliconix
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
RMS
(t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• 175 °C Operating Temperature
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. The isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 875 µH, R
G
= 25 Ω, I
AS
= 20 A (see fig. 12).
c. I
SD
≤ 30 A, dI/dt ≤ 200 A/µs, V
DD
≤ V
DS
, T
J
≤ 175 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
(Ω)V
GS
= 10 V 0.050
Q
g
(Max.) (nC) 46
Q
gs
(nC) 11
Q
gd
(nC) 22
Configuration Single
N-Channel MOSFET
G
D
S
S
D
G
TO-220 FULLPAK
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220 FULLPAK
Lead (Pb)-free
IRFIZ34GPbF
SiHFIZ34G-E3
SnPb
IRFIZ34G
SiHFIZ34G
ABSOLUTE MAXIMUM RATINGS T
C
= 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
20
AT
C
= 100 °C 14
Pulsed Drain Current
a
I
DM
80
Linear Derating Factor 0.28 W/°C
Single Pulse Avalanche Energy
b
E
AS
300 mJ
Maximum Power Dissipation T
C
= 25 °C P
D
42 W
Peak Diode Recovery dV/dt
c
dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
Mounting Torque 6-32 or M3 screw
10 lbf · in
1.1 N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91188
2 S09-0010-Rev. A, 19-Jan-09
IRFIZ34G, SiHFIZ34G
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-65
°C/W
Maximum Junction-to-Case (Drain) R
thJC
-3.6
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 µA 60 - - V
V
DS
Temperature Coefficient ΔV
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.065 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA 2.0 - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 60 V, V
GS
= 0 V - - 25
µA
V
DS
= 48 V, V
GS
= 0 V, T
J
= 150 °C - - 250
Drain-Source On-State Resistance R
DS(on)
V
GS
= 10 V I
D
= 12 A
b
- - 0.050 Ω
Forward Transconductance g
fs
V
DS
= 25 V, I
D
= 12 A
b
9.2 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 1200 -
pF
Output Capacitance C
oss
- 600 -
Reverse Transfer Capacitance C
rss
- 100 -
Drain to Sink Capacitance C f = 1.0 MHz - 12 -
Total Gate Charge Q
g
V
GS
= 10 V
I
D
= 30 A, V
DS
= 48 V
see fig. 6 and 13
b
--46
nC Gate-Source Charge Q
gs
--11
Gate-Drain Charge Q
gd
--22
Turn-On Delay Time t
d(on)
V
DD
= 30 V, I
D
= 30 A
R
G
= 12 Ω
,
R
D
= 1.0 Ω,
see fig. 10
b
-13-
ns
Rise Time t
r
- 100 -
Turn-Off Delay Time t
d(off)
-29-
Fall Time t
f
-52-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--20
A
Pulsed Diode Forward Current
a
I
SM
--80
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= 20 A, V
GS
= 0 V
b
--1.6V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= 30 A, dI/dt = 100 A/µs
b
- 120 230 ns
Body Diode Reverse Recovery Charge Q
rr
- 0.70 1.4 µC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
Document Number: 91188 www.vishay.com
S09-0010-Rev. A, 19-Jan-09 3
IRFIZ34G, SiHFIZ34G
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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