Vishay IRFIZ24G, SiHFIZ24G Data Sheet

IRFIZ24G, SiHFIZ24G

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)	60
RDS(on) (Ω)	VGS = 10 V		0.10
Qg (Max.) (nC)	25
Qgs (nC)	5.8
Qgd (nC)	11
Configuration	Single

D

TO-220 FULLPAK

G

S

G D S

N-Channel MOSFET

FEATURES

•Isolated Package

•High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

•Sink to Lead Creepage Distance = 4.8 mm

•175 °C Operating Temperature

•Dynamic dV/dt Rating

•Low Thermal Resistance

•Lead (Pb)-free Available

DESCRIPTION

Available

RoHS*

COMPLIANT

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

ORDERING INFORMATION
Package				TO-220 FULLPAK
Lead (Pb)-free				IRFIZ24GPbF
				SiHFIZ24G-E3
SnPb				IRFIZ24G
				SiHFIZ24G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER					SYMBOL		LIMIT		UNIT
Drain-Source Voltage						VDS	60		V
Gate-Source Voltage						VGS	± 20
Continuous Drain Current		VGS at 10 V		TC = 25 °C		ID	14
				TC = 100 °C			10		A
Pulsed Drain Currenta						IDM	56
Linear Derating Factor							0.24		W/°C
Single Pulse Avalanche Energyb						EAS	100		mJ
Maximum Power Dissipation		TC = 25 °C				PD	37		W
Peak Diode Recovery dV/dtc						dV/dt	4.5		V/ns
Operating Junction and Storage Temperature Range						TJ, Tstg	- 55 to + 175		°C
Soldering Recommendations (Peak Temperature)		for 10 s					300d
Mounting Torque		6-32 or M3 screw					10		lbf · in
							1.1		N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 595 µH, RG = 25 Ω, IAS = 14 A (see fig. 12).
c. ISD ≤ 17 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91187								www.vishay.com
S09-0063-Rev. A, 02-Feb-09								1

IRFIZ24G, SiHFIZ24G

Vishay Siliconix

THERMAL RESISTANCE RATINGS

	PARAMETER	SYMBOL	TYP.	MAX.	UNIT
	Maximum Junction-to-Ambient	RthJA	-	65	°C/W
	Maximum Junction-to-Case (Drain)	RthJC	-	4.1

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

60

-

-

V

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

-

0.061

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.0

-

4.0

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

-

-

25

µA

VDS = 48 V, VGS = 0 V, TJ = 150 °C

-

-

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 8.4 Ab

-

-

0.10

Ω

Forward Transconductance

gfs

VDS = 25 V, ID = 8.4 Ab

5.8

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

-

640

-

Output Capacitance

Coss

VDS = 25 V,

-

360

-

pF

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

-

79

-

Drain to Sink Capacitance

C

f = 1.0 MHz

-

12

-

Total Gate Charge

Qg

ID = 17 A, VDS = 48 V,

-

-

25

Gate-Source Charge

Qgs

VGS = 10 V

-

-

5.8

nC

see fig. 6 and 13b

Gate-Drain Charge

Qgd

-

-

11

Turn-On Delay Time

td(on)

-

13

-

Rise Time

tr

VDD = 30 V, ID = 17 A,

-

58

-

RG = 18 Ω, RD= 1.7 Ω,

ns

Turn-Off Delay Time

td(off)

-

25

-

see fig. 10b

Fall Time

tf

-

42

-

Internal Drain Inductance

LD

Between lead,

D

-

4.5

-

6 mm (0.25") from

nH

package and center of

G

Internal Source Inductance

LS

die contact

-

7.5

-

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

D

-

-

14

showing the

A

Pulsed Diode Forward Currenta

ISM

integral reverse

G

-

-

56

p - n junction diode

S

Body Diode Voltage

V

T = 25 °C, I

S

= 14 A, V

GS

= 0 Vb

-

-

1.5

V

SD

J

Body Diode Reverse Recovery Time

trr

T = 25 °C, I

= 17 A, dI/dt = 100 A/µsb

-

90

180

ns

F

Body Diode Reverse Recovery Charge

Qrr

J

-

0.32

0.64

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

www.vishay.com	Document Number: 91187
2	S09-0063-Rev. A, 02-Feb-09

IRFIZ24G, SiHFIZ24G

Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

					Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 25 °C

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91187	www.vishay.com
S09-0063-Rev. A, 02-Feb-09	3